施主
- donor;benefactor;donor impurity;alms giver
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[alms giver] 僧道等称施舍财物给佛寺或道观的人,也泛称一般的在家人
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其次,在常温下,本征CdTe薄膜均为高阻半导体。为了改善其导电性能,通常向CdTe薄膜中掺入施主或受主杂质,其中离子注入技术是掺杂方法之一。
Secondly , in normal temperature , CdTe thin films are high resistance semiconductor , for improving its electricity capability , we commonly inject benefactor or acceptor impurities into the pure CdTe thin films , the Ion influx technique is a good method among many adulteration means .
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你欺骗自己是把书带给大众的施主
You 've deluded yourself that you 're a benefactor bringing books to the masses .
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类氢施主杂质量子环能级和束缚能的B样条计算按可能引起污染的程度被定级设施
Calculation of Energy and Binding Energy of Hydrogen-like Donor Impurity Quantum Ring with B-spline Technique
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施主-可提供自由电子的搀杂物,使晶圆片呈现为n型。
Donor - A contaminate that has donated extra free electrons , thus making a wafer N-Type .
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SiC中基态施主能级分裂对杂质电离的影响
Effect of the Valley-Orbit Splitting in SiC on the Dopant Ionization
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利用B样条技术计算类氢施主杂质量子环能级和束缚能的量子尺寸效应。
The size-dependent effect of energy and binding energy of hydrogen-like donor impurity quantum ring are calculated with B-spline technique .
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GaAs中由磁场引起的与Si施主有关的高亚稳态
High-Index Metastable States of Si Donors in GaAs Under Magnetic Field
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在p型和n型半导体材料之间渡越区中的一个面,在这里施主杂质和受主杂质的浓度相等。
The surface in the transition region between p-type and n-type semiconductor material at which the donor and acceptor concentration are equal .
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Ge中束缚施主电子的自旋共振及其各向异性线宽
The spin-resonance of donor electron in Ge and anisotropic line width
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GaAs中与施主高激发态有关的共振极化子效应
Resonant polaron effect related with high excited states of donors in GaAs
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高温淬火对GaAs中深施主缺陷的影响
Effects of Quenching on Deep Donor Defect EL_2 in GaAs
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只有适量的Al含量才能有效增强施主一受主共掺杂的效果,促进N受主的掺杂,使更多的N溶解到了ZnO薄膜中。
Only proper Al content can enhance the effect of donor-acceptor co-doping , promoting more N incorporating into ZnO films .
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BaO过量的钛酸钡中施主Sb的取代位置
Lattice sites occupied by donor sb in barium titanate with excess Bao
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ZnSe(1-x)Sx中3d过渡金属杂质施主能级
Donor Levels of 3d-Transition Metal Impurities in ZnSe_ ( 1-x ) S_x Alloy System
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掺施主杂质半导体中LO声子的反对称光电导响应的MonteCarlo模拟
Monte Carlo Simulation for Photoconductivity Response of LO Phonon in Shallow Donor Doped Semiconductors
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施加本征激发光后在P型高纯Si中同时观察到B受主和P施主的跃迁谱线系。
Transition line series of both boron acceptor and phosphorus donor in p-type high-purity silicon have been observed simultaneously with the excitation of intrinsic light .
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浅施主杂质态在n-Hg(1-x)CdxTe磁致金属-绝缘体相变中的作用
Effect of Shallow Donor on Magnetic-Field-Induced Metal-Insulator Transition in n-Hg_ ( 1-x ) Cd_xTe
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通过改变Te的相对含量,可以调节施主掺杂浓度。
The doping concentration can be optimized by changing the content of Te .
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双施主掺杂在高性能高温PTC制备中的应用
Application of Double Donors in Making High Performance and High-curie PTC Ceramics
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双施主掺杂PTC陶瓷及其多层结构工艺研究
Study on Double Donor Doped PTC-Type Ceramics and Its Multilayer Structure Process
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以La进行单施主掺杂,含量为1.2mol%时,压敏电压最低。
When doped with a single donor of La of 1.2mol % , the sensing-voltage is low .
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氮气气氛下生长的Si单晶中N&O浅热施主的光热电离光谱研究
Study on n o shallow thermal donors in CZ Si grown in N 2 atmosphere by means of photothermal ionization spectroscopy
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施主掺杂浓度对PTC陶瓷材料导电性能和微观结构的影响
The effect of donor impurity concentration on electrical characteristics and microstructure of PTC ceramics
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液相施主及高钙添加对PTC材料性能的影响
Effect of Liquid-phase Donor Doping and High Calcium Adding on Performance of PTC Material
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GaAs中Te施主杂质的EER谱
EER spectrum of the impurity in gaas : te
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在空气中退火,样品的施主浓度减少,势垒高度降低;在Ar气中退火样品的施主浓度基本保持不变,而势垒高度下降较大;
When samples annealed in air atmosphere , donor concentration and barrier height drops while donor concentration remains unchanged ;
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最近报道显示,硼掺杂同质外延金刚石层暴露在氘离子束中能形成浅施主态的n型电导。
Recent report showed that exposure of p-type ( B doped ) homoepitaxial diamond layers to deuterium plasma can form n-type diamond with a shallow donor state .
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TiO2系压敏陶瓷施主掺杂研究
Research on Donor Doping of TiO_2-based Varistor Ceramics
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磁场对Ga(1-x)AlxAs/GaAs异质结系统中施主结合能的影响
Magnetic Field Influence on the Binding Energies of Donors in a Ga_ ( 1-x ) Al_xAs / GaAs Heterojunction System
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超纯Ge中剩余浅施主的光热电离光谱量子点中浅施主的能谱结构
Photothermal ionization spectroscopy of residual shallow donors in ultra-pure germanium spectral structures of shallow donors in quantum dots