drie

The relationship between trench profile and DRIE parameters is discussed .

还详细讨论了DRIE刻蚀参数与深槽侧壁形状之间的关系，并作了理论上的阐述。

Deep Reactive Ion Etching ( DRIE ) Device in the MEMS Fabrications

用于MEMS器件制造的深反应离子刻蚀设备

A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented .

提出了一种利用深反应离子刻蚀（DRIE）和电介质填充方法来制造具有高深宽比的深电学隔离槽的新型技术。

Based on the result of simulation , the V-shaped beam thermal micro-actuator array is fabricated on a SOI wafer by DRIE .

根据模拟结果，采用SOI硅片和微细加工DRIE技术制作了这种V型梁微执行器并联阵列。

This accelerometer is fabricated by N type silicon wafer . To obtain high aspect ratio structure , deep reactive ion etching ( DRIE ) process is employed .

加速度计用普通的N型硅片制造，为了刻蚀高深宽比的结构，使用了深反应离子刻蚀（DRIE）工艺。

DRIE was used to form an isolation trench that is filled by SiO2 layer . The SiO2 Bar was used to isolate the sidewall of device .

该工艺在DRIE形成的绝缘深沟内进行SiO2绝缘薄膜填充，并用填充后形成的SiO2条对器件侧壁进行电学绝缘。

By optimizing DRIE parameters and RIE etching the trenches ' opening , the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids .

采用经过参数优化的DRIE刻蚀深硅槽，并用反应离子刻蚀（RIE）对深槽开口形状进行修正，制造了具有理想侧壁形状的深槽，利于介质的完全填充，避免产生空洞。

Based on the principle of crossflow filtration , cell separation chip was designed , and the silica micro pillar array , 20 μ m in diameter and 50 μ m high , was fabricated by DRIE .

基于错流过滤原理，设计了用于血细胞分离的错流过滤微结构，采用深刻蚀技术在硅片上刻蚀出直径为20μm，高度为50μm的圆柱阵列；

This kind of vacuum devices with frequencies from W band to terahertz using LIGA , DRIE , DXRL , and DRIE deep etching technologies are emerging as a new subject : Micro-Vacuum Electronics .

这一类利用微细加工技术，特别是深刻技术，如LIGA，DEM，DXRL、DRIE等，制作的真空器件，已经形成一门新兴的交叉学科，微真空电子学及相应的技术和应用。

Three dimensional fabrication methods , such as LIGA , DRIE , EDM , micro relief , folding and RPM are described . These methods are related for commercialization need of micro optical systems , micro fluid systems and micro mechanisms .

评述了LIGA、DRIE、EDM、微浮雕、折叠法、RPM6种3维成形法，并指出如何组合它们以适应微光学系统、微流体系统、微机构等商品化的配套需要。

By using an extremely slow rate of Si ( 111 ) plane etching in anisotropic KOH , along with DRIE and other MEMS processes , the dimension of these beams can be accurately controlled , and the symmetry of the 8-beams / mass structure can be achieved .

这些悬臂梁是利用（111）硅在KOH溶液中的各向异性腐蚀特性结合深反应离子刻蚀（DRIE）实现的，其尺度精确可控，保证了结构的对称性。

In silicon deep reactive ion etching ( DRIE ) using inductively coupled plasma ( ICP ) etcher , a narrow trench with a width of several micrometers usually shows positively tapered profile , which means that the width of the etched trench decreases with the progress of etching depth .

利用自感应耦合等离子（ICP）蚀刻机进行硅深层反应离子刻蚀，得到了几微米宽的狭槽，其轮廓通常为正锥形，即蚀刻槽的宽度随着蚀刻深度的增大而减小。