tcad

The Tower CAD ( TCAD ) is the combination of traditional industry and information technology .

塔设备CAD（TCAD）是属于传统产业与信息技术相结合的课题。

Using TCAD in IC process development

用TCAD进行IC新工艺的开发

Optimization of design with TCAD approach for metal-gate CMOS technology and circuit

利用TCAD方法优化设计金属栅CMOS工艺及电路

Taurus WorkBench is a platform used for VDSM TCAD simulation and optimization .

TaurusWorkbench是用于超深亚微米层次下的TCAD一体化仿真优化平台。

The TCAD approach has become one of the most important methods in design and manufacture of silicon integrated circuits and discrete devices .

利用TCAD方法已成为集成电路和分立器件设计和制造的重要方法。

Over the past decade , the Utilization of technology CAD ( TCAD ) tools has become widespread in industry and academia .

最近10年，计算机辅助设计技术（TCAD）的应用已在工业界和学术界普及。

The appropriate LDD parameters which may depress the KINK effect are provided based on the simulated results of TCAD tools .

基于TCAD工具的计算结果，给出了合适的LDD参数，使KINK效应的影响降到最低。

The Simulation of C-V Transfer Characteristic AlGaN / GaN HEMT with ISE TCAD

基于ISE的AlGaN／GaNHEMT的C-V转移特性模拟

This dissertation mainly discusses the design of on-chip ESD protection units , the TCAD simulation , and the circuit-level modeling .

本论文主要研究了芯片上ESD防护设计，TCAD（工艺计算机辅助设计）仿真，及电路级建模。

With the development of computer science , TCAD ( Technology Computer Aided Design ) become a more and more indispensable tool in modern IC manufacturing and device investigation .

随着计算机辅助设计CAD（ComputerAidedDesign）的发展，工艺CAD（TCAD）成为IC制造工艺和器件研究中不可或缺的工具。

Based on TCAD instrument series , the design and optimization of small-dimension bipolar high-gain transistor at technology level and physical characteristic level are realized .

基于TCAD一体化系列工具，实现了小尺寸双极性超β晶圆管芯的工艺级及器件物理特性级的设计与优化。

The Research of TCAD for AlGaN / GaN HFET

AlGaN/GaN场效应晶体管的TCAD研究

All the research combines the IC technology control with the neural network , achieves the equipment model in IC technology , enriches the simulation model in the field of TCAD .

以上一系列工作将前人所做的工作包括集成电路工艺控制以及神经网络算法结合起来向前发展了一步，得到了尚未给予足够重视的集成电路工艺的设备模型，丰富了TCAD领域的模拟模型。

The novel termination structure was simulated with TCAD ( ISE ) . Simulation results showed that the novel structure featured excellent characteristics of optimized area and breakdown voltage .

采用TCAD（ISE）对该技术进行模拟，结果表明，该技术具有比较好的面积优化和击穿电压优化特性。

A new approach of combining DOE ( Design Of Experiment ) with TCAD to optimize IC process and devices is presented , which can greatly reduce the time and cost for developing new processes .

论述了实验设计（DOE）技术与TCAD相结合用于半导体工艺和器件性能优化的新途径，它可以极大地减少开发和研制新工艺、新器件的时间和成本。

In order to reduce the cost of integrated circuit fabrication , the metal-gate complement-metal oxide semiconductor ( CMOS ) technology was developed with technology computer assistant design ( TCAD ) approach .

为了降低集成电路制造工艺的成本，用计算机辅助工艺设计（TCAD）的方法开发了金属铝栅CMOS工艺。

As the feature size of Integrated Circuit reaching sub-micron , deep sub-micron and even very deep sub-micron , the parameter extraction and optimization in TCAD design are becoming more and more important .

随着集成电路特征尺寸进入小尺寸量级，TCAD设计阶段中的参数提取及优化工作显得更为重要。

A method to exact the electrical parameters and model the second breakdown action of MOSFET 's under ESD ( Electro-Static Discharge ) on circuit-level , using TCAD simulation , is presented .

采用一种利用TCAD仿真提取MOS器件在静电放电现象瞬间大电流情况下的电学参数，对MOS器件二次击穿行为进行电路级宏模块建模。

With the aid of TCAD process simulation , it is believed that boron segregation which reduces the boron doping of edge cell active area is the main cause of lower programming efficiency of edge cells .

借助于TCAD工艺仿真，发现STI引起的硼析出效应降低了边角单元有源区的硼浓度，是边角单元编程效率降低的主要原因。

Using design of experiments ( DoE ) combined with response surface methodology ( RSM ) can satisfy the great incentive to reduce the number of technology CAD ( TCAD ) simulations that need to be performed .

将实验设计和响应表面方法相结合可用来满足减少所需的TCAD模拟次数的强烈需求。

Additionally , this paper has proposed a quick calculation method for extracting the parameters of the physics-based equation when modeling on SPICE platform . Firstly , a new material structure of RTD is proposed and simulated under TCAD environment .

同时，针对SPICE平台下建模过程中遇到的提取物理方程参数的问题，提出了一种快速的计算方法。

The advantages and some basic properties of SiC material are analyzed , DC characteristics of recessed gate SIT under the pentode-like mode , triode-like mode and bipolar mode are simulated respectively using TCAD software MEDICI .

首先分析了SiC材料的优点及其基本性质，然后用MEDICI软件模拟了凹栅4H-SiCSIT器件分别在类五极管模式、类三极管模式和双极模式下的直流特性，并对其工作机理进行了阐述。

TCAD tool of DOE ( Design of Experiment ) combining with simulations for IC optimization design was implemented on a PC , some simulation software such as SUPREM , MINIMOS and PSPICE were utilized .

鉴于PC机广泛普及和使用方便，在PC机上建立起实验设计与模拟相结合用于IC优化设计的TCAD工具。

The article gives a brief introduction of the TCAD Virtual FAB infrastructure system . In the article the author points out the position of TCAD in the IC process development and puts forward the method that using TCAD in IC new process development .

文章对集成电路工艺计算机辅助设计系统（TCAD虚拟FAB系统）做了简要介绍，指出了TCAD在新工艺开发中的地位，提出了利用TCAD进行新工艺开发的思想。

Then take TWB software package of Synopsys corporation as an example , he discusses how TCAD can be used in the IC new process development . A 700V BCD process design was also given as an example to justify the method that the author has proposed .

以synopsys公司的TWB虚拟FAB系统为例，对TCAD用于新工艺的开发作了探讨，并给出了以此为平台进行700V高压BCD工艺设计的实例。

The enormous progress in computing hardware and software technology , together with significant advances in physical modeling accuracy , and speed and robustness of numerical algorithms , have made TCAD to a cost – effective albeit powerful technology that complements experimental approaches to wafer processing and metrology .

计算机硬件和软件迅猛发展和数值算法用的物理模型的精度、速度和鲁棒性显著提高，使TCAD作为晶片加工和计量的补充实验方法，成为降低成本的有效技术。