晶向

jīng xiàng
  • crystal orientation
晶向晶向
晶向[jīng xiàng]
  1. SiO2膜驻极体的表面化学处理及其P-型硅基片的晶向选择

    The Surface Chemical Treatment of SiO_2 Film Electret and Its Wafer P-silicon Substrate Crystal Orientation

  2. TMAH具有刻硅速率高、晶向选择性好、低毒性和对CMOS工艺的兼容性好等优点,而成为MEMS工艺中常用的刻蚀剂。

    TMAH has become a commonly used etchant for MEMS technology because of its high silicon etching rate , which depends on crystal orientation , low toxicity and well compatibility with CMOS technology .

  3. 用X衍射仪测定其优选晶向;

    The crystalline orientation is measured with x-ray diffraction ;

  4. P<100>Si衬底晶向偏离度对外延埋层图形畸变的影响

    Effect of Orientation Deviation on Pattern Distortion in Epitaxial Buried Layer on P 100 Si Substrate

  5. 本文指出,在影响P型(100)硅处延埋层图形畸变的诸因素中,衬底晶向偏离度是决定性的。

    For p-type ( 100 ) silicon substrate , the orientation deviation is the main factor influencing pattern distortion in epitaxial buried layer .

  6. 等离子体喷涂TiO2涂层晶向的价电子结构分析

    Valence electron structure analysis of crystalline orientation in plasma-sprayed tio_2 coatings

  7. 结果表明:随样品施加偏压的升高,TiN(111)晶向择优生长。

    The XRD result indicates TiN films trends to ( 111 ) preferred orientations with increasing sample bias .

  8. 通过X射线衍射光谱可以得知CoFe2O4/SrTiO3薄膜沿着a轴晶向生长,具有较好的择优取向性。

    From the X-ray diffraction spectra can be learned that CoFe2O4 / SrTiO3film is preferentially oriented along the a-axis perpendicular to the substrate surface .

  9. 本文研究了在Si(100)衬底上淀积双层薄膜的分层结构中超声表面波沿Si[110]晶向传播的速度-频率色散关系。

    In this paper , the dispersive characteristics of SAW propagating along the Si direction on the two-layered structure were studied in detail .

  10. 随着Er含量的增加,该焊料合金的组织由树枝晶向等轴晶转变,且组织逐渐细化。

    With the increase of Er content , the microstructure of the solder changes from fir-tree crystal to equiaxed crystal and is refined .

  11. X射线衍射结果表明:施加复合场后,晶粒的111晶向沿磁场方向取向;晶粒取向度随晶粒的细化有增大趋势。

    X-ray diffraction indicated that the refining grains were oriented with 111 towards the magnetic field direction . The orientation degree was increased with the decreasing of grain size .

  12. X-射线衍射(XRD)测试表明ITO薄膜的晶粒尺寸随膜内氧的摩尔分数增加而增大,随氧气比例增加薄膜(400)晶向消失。

    XRD test showed that grain size of ITO films increased and crystallization direction ( 400 ) disappeared with more oxygen flow .

  13. 所用的样品用MOCVD方法生长在<100>晶向的GaAs衬底上。

    The sample used in this study was grown by MOCVD method on < 100 > oriented GaAs substrates .

  14. 晶向对InGaP/GaAsHBT性能的影响

    Orientation Effects on InGaP / GaAs HBT

  15. 同时本文还提出了适合铸锭凝固过程的柱状晶向等轴晶转变(CET)判据。

    A columnar-to-equiaxed transition ( CET ) criterion is developed for the case of solidification of ingots .

  16. 硅KOH腐蚀<100>晶向凸角补偿技术及应用

    Compensation technique for < 100 > convex corner undercutting in KOH anisotropic etching of silicon and its application

  17. 三种磁感应强度下,在[111]晶向单晶硅抛光片上,Cr镀层都以(110)晶面择优生长。

    On silicon polished wafer whose orientation index is [ 111 ] , the Cr coating all by ( 110 ) crystal face preferred grow at three magnetic induction intensity .

  18. 利用AES和同步辐射光电子谱,在圆柱状的Si单晶样品上研究了氧表面吸附的晶向关系。

    AES and photoelectron spectra obtained with synchrotron radiation have been used to study the orientation dependence of oxygen adsorption on a cylindrically shaped Si single crystal .

  19. 阐述了非活性GaAs/Ge太阳电池的制备技术,包括采用较低的生长温度,较快的生长速率,适当晶向的单晶衬底及背面屏蔽等措施。

    The fabrication technology of inactive GaAs / Ge SC , including lower growth temperature , faster growth velocity , proper crystal orientation , back surface shield , etc.

  20. 采用切克劳斯基技术,观察了按不同晶向从熔态生长InSb单晶时固液界面的形貌。

    The observations of solid-liquid interface morphology of InSb single crystals pulled by using various oriented seeds is described .

  21. 单晶直径30~35mm,晶向<111>。

    The crystal diameter is 30 ~ 35 mm , < 111 > orientated .

  22. 纳米棒沿(100)晶向生长,其形成可以用Ostwald成熟机制来解释。

    The growth of the nanorods can be explained by the Ostwald ripening mechanism .

  23. 柱状晶向等轴晶转变(CET)是在一定的凝固过程中必须控制的一种显微组织转变。

    The columnar to equiaxed transition ( CET ) is a kind of microstructural transformation in certain solidification , which should be controlled .

  24. 通过理论计算得到了KDP晶体在不同晶向上临界切削厚度的变化规律。

    The variation rules of critical cutting thickness on the different crystal and different orientation of KDP crystal are obtained by theoretic calculate .

  25. 采用低压金属有机化学气相沉积(LPMOCVD)法,成功地在(0001)晶向的蓝宝石(Al2O3)衬底上制备了高质量的GaN薄膜。

    High-quality GaN film was successfully deposited on ( 0001 ) - oriented sapphire substrate by low-pressure metal-organic chemical vapor deposition ( LPMOCVD ) process .

  26. 随合金元素Zn和A1增加,合金由粗大的树枝晶向细小的等轴晶转变,晶粒尺寸逐渐减小,而晶界处的共晶相数量逐渐增多,尺寸逐渐增大。

    With increasing of Zn and Al , the coarse dendrites transite to fine equiaxed grains and the grain size is gradually reduced ; While the number of eutectic phase and its size both gradually increased .

  27. 采用CZ法拉制晶向为<100>Ge单晶,利用化学腐蚀和金相显微镜研究Ge单晶中位错密度、位错坑形态发展过程。

    The chemical etching pits , dislocation density and profile of the monocrystalline Ge < 100 > grown by the CZ were studied by the chemical etching experiment under the optical microscope OLYMPUS .

  28. 用深能级瞬态谱(DLTS)技术详细研究了金在p型<111>晶向硅MOS结构Si/SiO2界面区中的行为。

    Behavior of gold in the Si / SiO2 interface region has been investigated using deep level transient spectroscopy ( DLTS ) in the MOS structures made on p-type silicon wafers with < 111 > orientation .

  29. 根据同一晶向的晶面具有平移周期对称性,将托马斯费米方程引入晶体的平面沟道中求解Si(110)平面沟道内的电场;

    According to the transnational periodically symmetry of crystal plane in its space , the author introduce the Thomas-Fermi equation in crystal planar channeling electric fields ; then calculate the electric fields of single crystal Si ( 110 ) and its critical angle .

  30. 本论文选择汞滴与硅基底间的润湿行为作为研究对象,主要开展了以下工作:采用电化学刻蚀的方法,在n型100晶向硅基底上制备出条状和柱状有序多孔硅阵列。

    The wetting of mercury on Si was chosen as the research object in this thesis . The research work mainly contains the following aspects : This thesis utilizes electrochemical etching technology to prepare the strip and pillar ordered porous silicon array on the n-type 100 Si substrate .