畴壁

chóu bì
  • domain wall;domain boundary
畴壁畴壁
畴壁[chóu bì]
  1. 随软磁相厚度的增大,矫顽力机制从成核变为钉扎;但当界面交换耦合作用较弱时,畴壁中心最终钉扎在两相界面处而没进入硬磁相内部。

    As the soft layer increases , the coercivity mechanism transforms from nucleation to pinning . But when the strength of interface exchange coupling is weak , the center of domain wall pins the hard / soft interface rather than in the hard layer .

  2. 各向异性超精细相互作用及畴壁位移激发造成了FeⅡ的奇异核磁共振线形。

    The peculiar line shape of nuclear magnetic resonance of Fe ⅱ arises from the anisotropic hyperfine interactions and the domain wall excitation .

  3. NixZn(1-x)Fe2O4铁氧体畴壁运动阻力函数的研究

    The Resistance Function Research of Domain Wall Motion in Ni_xZn_1-x Fe_2O_4 Ferrite

  4. PZT陶瓷中由氧空位与畴壁相互作用引起的内耗

    Internal friction due to the interaction between oxygen vacancies and domain boundaries in PZT ceramics

  5. 在不可逆畴壁移动过程中,当H为4.2mT时,χ〃(H)达到最大值χmax;

    When the domain wall motion is nonreversible , the χ″( H ) is the largest value χ max when the H is 4.2 mT.

  6. 二次磁电耦合效应和DM相互作用对六角锰氧化物畴壁的影响。

    Effect of the quadratic magnetoelectric coupling and Dzyaloshinski-Moriya ( DM ) interaction on domain walls in hexagonal manganites .

  7. Dy(Fe(1-x)Gax)2中畴壁的内禀钉扎和宏观量子隧道效应

    Macroscopic quantum tunneling of the magnetization and intrinsic pinning of domain walls in dy ( fe_ ( 1-x ) ga_x ) _2 compounds

  8. 直流偏场(Hb)和面内场(H(ip))都是影响硬磁畴畴壁中VBLs稳定性的重要因素。

    The static bias field ( H_b ) and in-plane field ( Hjp ), two important factors , will affect the vertical-Bloch-lines in hard domain .

  9. Nd2(Fe(1-x)Mnx)(14)B的磁化和反磁化行为可用窄畴壁的特征来解释。

    The magnetization and demagnetization behaviors in Nd_2 ( Fe_ ( 1-x ) Mn_x ) _ ( 14 ) B can be understood in terms of narrow domain walls .

  10. 讨论了Z相,带状组织和晶界析出相对畴壁的作用,探讨了在高Hc状态下非均匀钉扎的机构。

    The action of " Z " phase , zonal structure and grain boundary precipitates on domain walls are discussed and a machanism of heterogeneous pinning at the high coercivity is suggested .

  11. 表明Nd-Fe-B烧结磁体的磁硬化主要被畴壁钉扎所控制。

    Note that the magnetic hardening in sintered Nd-Fe-B based magnets is controlled by pinning of domain walls .

  12. 不同温度下Nd2Fe(14)B永磁体畴壁中磁矩的转向公式

    Rotational Formulas of the Magnetic Moment in the Domain Walls of Nd_2Fe_ ( 14 ) B Permanent Magnet at Different Temperatures

  13. 温度对普通硬磁泡畴壁中VBL链的影响

    Influence of Temperature on VBLs in the Walls of Ordinary Hard Bubble

  14. 硬磁畴畴壁中垂直布洛赫线的形成及其稳定性的研究,对布洛赫线存储器(BLM)的研制与使用具有重要意义。

    The formation and stability of VBLs in the hard domains is very important to design and use ofBLM .

  15. LiNbO3晶体中的一个新现象&推测LiNbO3晶体中存在90°畴壁

    A new phenomenon in linbo_3 crystal & conjecturing the existence of 90 ° domain wall in linbo_3 crystal

  16. 面内场对处于直流偏磁场压缩状态下的IID畴壁中布洛赫线链的影响

    Influence of Inplane Field on Bloch Line Chains in the Wall of IID Compressed by Static Bias Field

  17. 直流偏场和面内场联合作用下第Ⅰ类哑铃畴壁内VBLs的稳定性

    Stability of First Kind of Dumbbell Domains Subjected to an In-plane Field at Different Bias Fields

  18. 温度和面内场都是影响硬磁畴畴壁中VBLs稳定性的重要因素。

    The temperature and in-plane field , the two important factors , will affect the vertical-Bloch-lines in hard domains .

  19. 另外,为了更加准确地测定OHB畴壁中的VBL软化的临界面内场范围,本文对经过筛选的OHB在H(ip)作用下其畴壁中VBL的消失规律给予了研究。

    In addition , in the paper we also studied the annihilation of ordinary hard bubbles ( OHB ) by screening in order to measure accurately the critical in-plane field range .

  20. 我们证明自旋轨道耦合将两分量玻色-爱因斯坦凝聚体的基态相位差锁定在±π-2,从而打破了自旋沿x-y平面的旋转对称性,将自旋畴壁的类型限定在了布洛赫壁。

    We demonstrate that the spin-orbit coupling locks the relative phase of the two-component condensates at ±π / 2 , thus breaks the spin rotational symmetry in the x-y plane and restricts the type of the domain wall to Bloch wall .

  21. 当Cu中间层厚度大于3nm时,铁磁层之间的耦合作用减弱,纳米多层膜为面内易磁化,磁泡结构的磁畴消失,全部为具有波纹状的接近180°畴壁的磁畴结构。

    When the thickness of Cu intermediate layer is more than 3 nm , the magnetic bubbles vanish and ripple magnetic domain structure with 180 ° domain wall can be observed , due to the weakening ferromagnetic coupling effect between Co layers .

  22. 在聚丁二炔链上,当出现从PDB相向PDA相转变时,会出现一个畴壁和反畴壁,这个相变的出现主要是由于π电子重新分布的结果。

    A domain wall ( soliton ) or an anti - domain wall will be formed when transition occuring from PDB to PDA , or from PDA to PDB , and these transitions are mainly , due to the behavior of π & electrons .

  23. 霍素国等人研究了温度和面内场共同对三类硬磁畴畴壁中含VBLs较少的普通硬磁泡(OHBs)的影响,发现了一些有价值的规律。

    Have investigated the ordinary hard bubbles ( OHBs ) are subjected to joint temperature and in-plane field and find some important rules of the annihilation of the VBLs .

  24. 结果表明,主相晶粒表面软磁性区成核及从表面向晶粒内部不可逆畴壁位移对Nd-Fe-B合金的矫顽力起决定性作用。

    The results indicate that the nucleation in the soft magnetization regions located at the surface of hard magnetic grains , as well as the irreversible domain wall displacement from the surface to the inside of grains are the dominant factors controlling the intrinsic coercivity of Nd-Fe-B alloy .

  25. 晶粒尺寸增加,畴壁尺寸增大,介电弛豫向低频移动;

    Mobile Middleware Relaxation frequencies increase with decrease of grain size .

  26. 这使得畴壁厚度变窄。

    That results in a decrease of the thickness of domain walls .

  27. 薄膜畴壁自旋波耦合栅格设计

    Design for Spin Wave Coupling in Domain Walls of Magnetic Thin Film

  28. 消除宇宙真空畴壁的一个可能的模型

    A Possible model for Exclusion of Cosmic Vacuum Domain Wall

  29. 三类硬磁畴畴壁结构分析

    Analysis of the Domain Wall Structrues of the Three Kinds of Hard Domain

  30. 微型磁阻元件中磁畴活动和畴壁态极性转变的研究

    A Study on Domain Activities and Wall State Transitions in Small MR Elements