蚀刻速率

基于差动原理对HF酸恒定化学蚀刻速率法进行改进，以降低环境（温度、HF酸浓度等）变化对测量结果的影响，从而提高测量效率和测量准确性。

Constancy of chemical etch rate method was modified so as to reduce the influencing factors such as temperature and concentration of HF acid . The efficiency and accuracy are improved .

聚酯膜在NaOH溶液中的蚀刻速率

The etching rate of PET film in NaOH solution

测定了PET基膜在不同浓度、温度的NaOH溶液中的蚀刻速率，经回归得到它们之间的经验关联式，提出了几种增大PET膜径迹蚀刻速率的有效方法。

Under different temperatures and NaOH concentration the bulk etching rate for PET film was determined and an empirical formula was obtained . To increase the etching rate along the tracks some effective methods are suggested . '

蚀刻速率随浓度的增加先增大，再下降，且在浓度为40%左右出现极大值；

And the etching rate increased at first and then decreased with increasing concentration .

三氯化铁溶液中影响铁镍合金蚀刻速率的因素

Influencing factors on etching rates of iron nickel alloy foils in ferric chloride solution

各向同性固体核径迹探测器蚀刻速率比为变量时径迹蚀刻动力学模型

Track Etch Dynamics Model of Isotropic Solid State Nuclear Detector at a Varied Etching Rate

对比样品的蚀刻速率应符合蚀刻生产要求。

To compare samples we can find that etched production rate should be in line with demand .

等离子刻蚀又是复杂离子团在电场磁场中的复杂化学物理作用，对于整个晶片的蚀刻速率和均匀度难以用简单理论模型计算分析。

The plasma etching is a complex process of ion movement in electronic-magnetic field and process of physical-chemical reaction .

研究发现，引起蚀刻速率变化的根本原因是ψ（蚀刻面积与掩模开口面积比例）的变化。

The study found that the variation of φ( the ratio of the area being etched to the area of the stencil opening ) was the root causing the etching rate variation .

研究了各组分浓度、温度对蚀刻速率的影响作用，并进行了蚀刻溶液对钢设备的腐蚀性能研究。

By means of chemical reaction tests , meanwhile studied the effect factors of composition concentration and temperature of the etching solution on etching rate . The corrosion of steel equipment by the etching solution is also studied .

随着集成电路集成度增加，晶片尺寸不断增大，等离子蚀刻的刻蚀速率控制和不均匀度控制变得越来越重要。

With the development of IC technology , the integrity of IC chip is increasing and wafer size is larger . The control of plasma etching etch rate and non-uniformity is getting more and more important .

进一步分析指出，在超声分子束和脉冲激光条件下，反应中间产物的脱附为蚀刻反应的主要速率控制步骤，并且以激光诱导热脱附为主要机理。

It is pointed out that the laser induced desorption of the reaction intermediates is the rate limiting step of the chemical etching reactions under molecular beam and pulsed laser conditions , and the desorption process may be described as the laser induced thermal desorption .

阐述了在微带精密蚀刻过程中影响蚀刻速率变化的诸多因素，探讨了酸性氯化铜蚀刻液工艺控制应该注意的问题和解决办法。

The paper introduces many influencing factors such as Cl ~ - , Cu ~ ( 1 + ), Cu ~ ( 2 + ) concentration of microstrip fine etching process and discusses the problems and solutions that should be regarded during controlling acidic copper chloride corrosion solution .

探讨了蚀刻剂中重铬酸钾浓度、硫酸浓度及蚀刻温度、蚀刻时间等因素对聚丙烯膜基体蚀刻速率的影响；

The chemical etching techniques of polypropylene ( PP ) nuclear track membrane were studied . The effects of potassium dichromate concentration , sulfuric acid concentration , etching temperature and etching time on the bulk etching rate of PP nuclear track membrane were discussed .