金属有机物化学气相沉积

金属有机物化学气相沉积法沉积镍膜的影响因素

Deposition of Nickel Film by MOCVD and Relevant Factors Discussion

通过在自制的电子回旋共振等离子体增强金属有机物化学气相沉积（ECR-PEMOCVD）系统上装配反射高能电子衍射仪（RHEED），对外延GaN生长过程进行原位监测。

The reflection high-energy electron diffraction ( RHEED ) mounted in the electron-cyclotron-resonance plasma-enhanced metal organic chemical vapor deposition ( ECR-PEMOCVD ) system designed by us was used to monitor the GaN growth process in-situ .

目前，金属有机物化学气相沉积（MOCVD）是制备GaN薄膜最为广泛的工艺。

Metal organic chemical vapor deposition ( MOCVD ) is widely used by researchers among all methods today .

为解决上述问题，采用常压金属有机物化学气相沉积技术在活性炭表面沉积构成纳米TiO2固定化非均相光催化剂。

To overcome these problems , the atmospheric pressure metal-organic chemical vapor deposition ( MOCVD ) technology was used to load TiO2 onto the surface of activated carbon .

研究了金属有机物化学气相沉积（MOCVD）系统中气体流量的自动控制方法。

The paper focused on the research of gas flow automatic control method of the MOCVD ( Metal Organic Chemical Vapor Deposition ) .

MOCVD是金属有机物化学气相沉积技术的简称，即通过MOCVD设备，在衬底上生长材料晶体的一种方法。

MOCVD is an abbreviation form for Metal Organic Chemical Vapor Deposition , which is a method used to grow material crystal on substrate via MOCVD device .

本文根据金属有机物化学气相沉积（MOCVD）系统的原理和特点，建立了计算机自动控制的热壁低压MOCVD系统。

According to the principles and characteristics of Metal Organic chemical vapor Deposition ( MOCVD ) a computer controlled hot wall low pressure MOCVD system was established .

物理方法包括各种蒸发和溅射：化学方法主要包括分子束外延（MBE）、金属有机物化学气相沉积（MOCVD）、氢化物气相外延（HVPE）等。

Physical methods include evaporation and sputtering ; Chemical methods mainly include molecule beam epitaxy ( MBE ), metal organic chemical vapor deposition ( MOCVD ), hydride vapor phase epitaxy ( HVPE ) and so on .

铁电薄膜有多种制备方法，其中金属有机物化学气相沉积（MOCVD）法以可大面积生产、沉积温度低、薄膜质量好、与硅集成工艺兼容性高等特点被广泛用于铁电薄膜的制备。

There are several methods for depositing ferroelectric thin films , among which metal organic chemical vapor deposition ( MOCVD ) method is widely used in large-scale production , low temperature , high compatibility with silicon integration process and other advantages .

报道了利用低压金属有机物化学气相沉积技术生长纳米ZnS薄膜，然后，将ZnS薄膜在氧气中于800℃温度下进行热氧化制备高质量纳米ZnO薄膜。

In this paper , we report the photoluminescence from high quality nanocrystalline ZnO thin films . The high quality nanocrystalline ZnO thin films are prepared by thermal oxidation of ZnS films at 800 ℃, which are deposited by low pressure metal organic chemical vapor deposition technique .

着重介绍了金属有机物化学气相沉积，金属有机物热分解，以及溶胶一凝胶三种制备技术在铁电薄膜制备领域中的应用。

The applications of some methods such as MOD , MOCVD and Sol-Gel on preparation of ferroelectric films are emphasized .

通过金属有机物化学气相沉积方法在碳纳米管模板上生长氮化镓纳米线束。

Template growth of gallium nitride nanowires was demonstrated by metal organic chemical vapor deposition ( MOCVD ) with carbon nanotubes as templates in this paper .