锑化镓
- 网络gasb;Gallium antimonide
锑化镓-
本文分别介绍了Ⅲ－Ⅴ族化合物砷化镓（GaAs），氮化镓（GaN），锑化镓（GaSb）的特性、生长方法，国内外研究水平及应用。
The characteristics , grow methods , application and their R & D of ⅲ-ⅴ compounds GaAs , GaN and GaSb were described respectively in this paper .
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机械化学抛光加工的锑化镓晶片表面的SEM像观察不到桔皮皱纹；其损伤层深度约55nm。
While there are no wrinkles on the surface of chemical mechanical polished wafers , and the thickness of the damage layers is less than 55 nm .