五氧化二钽

五氧化二钽薄膜的制备及其I-U特性

Growth of Tantalum Pentoxide Films and Its Current Voltage Characteristics

采用直流脉冲反应磁控溅射方法制备了高介电常数五氧化二钽（Ta2O5）薄膜。

Tantalum Pentoxide ( Ta2O5 ) films were prepared by pulsed DC reactive magnetron sputtering method .

五氧化二钽高K薄膜作为MOSFET绝缘栅研究

The Research Progress of High Dielectric Constant Tantalum Oxide Films as MOSFET-gate

利用C和CO的还原性，能有效地将Cr6+还原成Cr3+或者金属Cr.五氧化二钽碳还原过程的机理研究

By using a two-stage carbon reduction process , Cr ~ ( 6 + ) may be effectively reduced to Cr ~ ( 3 + ) or even metallic Cr. THE MECHANISM STUDY OF CARBON REDUCTION PROCESS OF TANTALUM PENTOXIDE

作为一种新型的光催化材料，五氧化二钽（Ta2O5）以其禁带宽度大、化学稳定性好等特点引起了人们广泛的关注。

Tantalum oxide has proven to be an effective photocatalyst owing to its broad band gap and good chemical resistance .

五氧化二钽碳还原过程的机理研究

The mechanism study of carbon reduction process of tantalum pentoxide

五氧化二钽镀膜材料碲镉汞阳极氧化层的化学结构分析

The tantalum oxide coating material Chemical structure of HgCdTe - anodic oxide

氮化钼与五氧化二钽复合电极性能的研究

Properties of Composite Electrode of Tantalum Oxide and Molybdenum Nitride

介绍了五氧化二钽镀膜材料的制作工艺及材料和膜层性能。

The technology and properties of Tantalum Oxide coating material have been introduced .

五氧化二钽薄膜的I&V特性

I-V characteristics of high dielectric constant tantalum oxide films

将反应磁控溅射制备的二氧化钛和五氧化二钽薄膜在温度400℃的条件下退火处理。

TiO_2 and Ta_2O_5 optical films , which were prepared by reactive magnetron sputtering technique , have been annealed at400 ℃ in air .

在五氧化二钽基体中加五氧化二铌配成标准溶液，与氟钽酸钾样品在相同条件下经系列处理后进行纸上色层分离，分离后与样品直接进行目视比色。

Nb2O5 liquor is added into the Ta2O5 to form standard solution , then carry out chromatographic separating on paper after series of treatment with potassium fluotantalate sample parent solution .

离子色谱法测定五氧化二铌和五氧化二钽中痕量氟氯和硫酸根离子的前处理方法

Pretreatment Method for the Determination of Trace Fluoride , Chloride and Sulfate in Tantalum Pentoxide and Columbium Pentoxide by Ion Chromatography