俄歇电子能谱

Au/a-Si：H界面X射线光电子能谱和俄歇电子能谱研究

XPS and AES study for au / a-si : h interface

利用俄歇电子能谱仪研究Al焊垫表面的F腐蚀

Study on Fluorine Induced Aluminum Bonding Pads Corrosions Using Auger Electron Spectroscopy

用俄歇电子能谱研究薄膜Cu2S/CdS太阳能电池

A study of cu_2s / cds solar cell by AES

TINx薄膜的特性和俄歇电子能谱分析

Characteristics of TiN_x Film and Analysis by Auger Electron Spectroscopy

Pd/W/Si（111）双层膜界面X射线光电子能谱与俄歇电子能谱研究

XPS and AES study for pd / w / si ( lll ) bilayer interface

合成TiN膜的俄歇电子能谱研究

Study on the Composition TiN Film by AES

二次发射体MgO薄膜的俄歇电子能谱的研究

Study on secondary electron emitter MgO thin film with Auger electron spectroscopy

俄歇电子能谱（AES）及其在超导材料分析中的应用

Auger electron spectroscopy ( AES ) and it 's application in superconducting materials analysis

在Si（100）基底上制备了Ti/TiN和Ni/TiN两种多层膜以及TiN单层膜，利用X射线衍射，WYKO表面形貌仪，俄歇电子能谱等对薄膜进行了分析。

Ti / TiN and Ni / TiN multilayered films and TiN single film were prepared on Si ( 100 ) wafers .

对材料的特性进行了俄歇电子能谱、低角度X射线衍射、光荧光及拉曼光谱等分析测试。

Auger electron energy spectra , low angle X-ray diffraction , photo-luminescence and Raman spectra were measured to confirm the quality of the SLSs .

介绍了一台用于表面分析的俄歇电子能谱仪（AES）系统。

A system of Auger electron spectroscopy ( AES ) for surface analysis was presented .

通过X射线衍射（XRD）和俄歇电子能谱（AES）分析研究了薄膜的微结构；

Microstructures of thin films are characterized by X-ray Diffraction ( XRD ) and auger Electron spectroscopy ( AES ) .

液相外延生长的AlxGa（1-x）As/GaAs异质结构的俄歇电子能谱

Auger Electron Spectra of Al_xGa_ ( 1-x ) As / GaAs Heterostructure Grown by LPE

利用俄歇电子能谱（AES）进行氧化膜元素深度剖析发现，在含0.3%铍的镁合金液表面生成的氧化膜可以分为3个亚层：最外层为氧化镁层；

AES depth profile analysis showed that the surface oxide film could be divided into three sub layers .

采用俄歇电子能谱（AES）和X射线光电子能谱（XPS）研究其协合润滑机理。

Auger electron spectroscopy ( AES ) and X ray photoelectron spectroscopy ( XPS ) are employed to study the synergistic mechanism .

利用俄歇电子能谱研究了Cr／SiO2薄膜在热处理过程中的界面扩散反应机理、界面反应动力学过程及界面反应产物。

The mechanism , kinetic and reaction species on the interface reduction of Cr / SiO2 film have been studied using AES .

利用在位俄歇电子能谱（AES）分析了薄膜表面的组分。

In-situ film composition analysis was carried out in the analysis chamber with Auger electron spectroscopy ( AES ) .

利用俄歇电子能谱、SEM及X射线衍射能谱进行了生长薄膜微结构分析。

The most suitable growth conditions are found through analysis of films ' crystallinity and chemical components measured by X-ray diffraction , SEM and Auger energy patterns .

用针盘摩擦磨损实验机测定了注入样品的耐磨性能，用俄歇电子能谱仪（AES）测量注入样品成分深度分布，并检测了样品硬度。

The frictional properties of the implanted samples were assessed using a pin-on-disk tester and the elemental depth profiles were measured .

实验采用的是分子束技术，以及俄歇电子能谱（AES），四极柱质谱（QMS）和X射线光电子能谱（XPS）等表面分析技术。

The experimental works were carried by using the molecular beam technique and the surface analysis technique ( AES , QMS , XPS ) .

HL-1装置石墨孔栏杂质收集探针的俄歇电子能谱及孔栏表面分析

AES analysis of collector probe with graphite limiter and limiter surface analysis in the HL-1 TOKAMAK

用扫描电子显微镜（SEM）和俄歇电子能谱（AES）两种表面分析技术对Co离子注入修饰微电极的表面状况、表面元素组成及深度分布进行测定。

The composition and depth distribution of elements on the surfaces of Co ion implantation modified carbon fiber microelectrode were determined by scanning electron microscope and Auger electron spectroscopy .

然后进行膜表面和剖面的俄歇电子能谱（AES）分析。

PHI-600 Scanning Auger Electronic microprobe was used to analyze the Auger electronic spectroscopy ( AES ) of the surface film of each specimen .

用X射线光电子谱（XPS）和俄歇电子能谱（AES）研究了Ti／Al2O3界面形成的过程。

The formation process of Ti / Al2O3 ( 1102 ) interface has been studied by X-ray photoelectron spectroscopy ( XPS ) and Auger electron spectroscopy ( AES ) .

在俄歇电子能谱（AES）和X射线电子能谱（XPS）的测量过程中对元素的灵敏度因子进行修正，使两者结果趋于一致。

In the AES and XPS measurements , the relative sensitivity factors of elements are corrected and the results for AES and XPS are consistent with each other .

采用电子束蒸发工艺制备了光电变色器件用纳晶TiO2薄膜，利用原子力显微镜、X射线衍射、俄歇电子能谱等手段对纳米晶TiO2薄膜的表面形貌、结晶状态及组分进行了分析。

The surface morphology , crystal state and composition were analyzed with atomic force microscope ( AFM ), X-ray diffraction ( XRD ) and Auger electronic spectroscopy ( AES ) .

通过X射线光电子能谱（XPS），俄歇电子能谱（AES）及付立叶变换红外吸收光谱（FTIR），对所形成的碳化硅埋层进行了测试与分析。

The SiC buried layer was studied by X-ray photo-emission spectroscope ( XPS ), Fourier transform infrared spectroscope ( FTIR ) and Auger electronic spectroscope ( AES ) .

用X射线衍射分析（XRD）表面结构、晶相变化；用俄歇电子能谱（AES）分析注入氮的浓度分布；

After treatments , the structure and nitrogen concentration profile of the samples were examined by the X ray diffraction ( XRD ), Auger electron spectroscopy and Vick 's microhardness tester .

利用铀的电子能量损失谱（EELS）、俄歇电子能谱（AES）原位，研究了在室温下O2气氛中表面Ti膜初始氧化过程中表面结构的变化。

The initial oxidation of coating Ti on uranium is in situ studied by AES and EELS in super high vacuum oxygen atmosphere at room temperature .

之后采用扫描电子显微镜（SEM）、能量散射谱（EDX）、俄歇电子能谱（AES）、傅立叶变换红外光谱（FTIR）对氧化硅薄膜进行分析。

The thin film has been studied with Energy Dispersive X-rays ( EDX ), Auger Electron Spectroscopy ( AES ) and Fourier Transform Infrared ( FTIR ) .