光电导探测器

GaAs光电导探测器的双束质子改性

Modification of GaAs Photoconductive Detector by Double Proton Beam

基于同步辐射光源的光电导探测器标定系统

Calibration system for photoconductive detector based on synchrotron soft X-ray source

光电导探测器的响应时间与微变等效电路

Response time and the small signal equivalent circuit of the photoconductive detector

硫化铅（PbS）薄膜因其直接带隙窄禁带而在近红外波段（1～3μm）具有良好的光敏性，常用来制作近红外光电导型探测器。

Lead sulfide ( PbS ) thin films , suitable for the application of NIR photoconductive detection , have good photosensitive properties in the NIR region ( 1 ~ 3 μ m ) for their direct narrow gap .

理论上探讨了探测器暗电流的机制。（3）论文中对所研制的超晶格台面光电导型单元探测器的探测性能进行了研究。

We theoretically discussed the mechanism of the dark current . ( 3 ) In this work , we also have studied the performance of the photoconductor detectors .

红外探测器部分主要讲红外探测器的概念、光电效应、光子探测器中的光电导探测器和光伏型探测器。

In the section of infrared detector , the concept of infrared detector , photoelectric effect , photoconductive detector and photovoltaic detector are mainly described .