掩膜
- 网络MASK;masking;Reticle
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给出掩膜和X射线光刻照片。
The SEM photo of X ray lithography and mask was given .
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另外采用Matlab实现对CEEMD结果的掩膜信号后处理方法。
In addition , the Matlab was used to explain the mask signal post processing .
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并用BAsic语言绘制出所需的七块光刻掩膜图。
Seven figures of masks for photolithography have also been drawn with BASIC language .
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首先使用GIS数据对陆地区域进行了掩膜处理,剔除了陆地区域的影响。
Firstly , GIS data are adopted to mask the land areas in the AP data .
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描述了一种语音IC的设计原理和掩膜编程方法。
This paper describes a voice synthesizer design and a mask programming approach .
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投影电子束光刻中电子穿透掩膜的MonteCarlo模拟
Monte Carlo simulation of electron transmission through masks in projection electron lithography
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而深层同步辐射光刻掩膜技术是X射线光刻应用的关键之一。
The deep synchronous radiation lithography mask is one of the key technologies in x ray lithography .
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在工艺级中设计了Z轴微机械陀螺的掩膜版图和工艺流程,并进行工艺几何仿真。
In process level design , the layout and process with geometrical simulation was made .
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掩膜法与Gabor滤波在指纹增强中的应用
Application of Counter-peaked Mask and Gabor Filter to Fingerprint Image Enhancement
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船舶检测的过程主要包括SAR影像的预处理、陆地掩膜、船舶检测及人工交互等步骤。
The process of ship detection includes : SAR image pre-processing , land masking , ship detection and manual interaction .
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在SiO2掩膜区生长的GaN,其腐蚀坑密度(相当于穿透位错密度)减少到几乎为零。
The threading dislocation density is reduced to almost zero in the area on mask .
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荧光显微镜的结果表明在SiO2掩膜区有成核过程发生。原因可能是SiO2的质量不高,为GaN的生长提供了一些成核中心。
The results from luminescence microscope observation reveal that nucleation happens on the SiO_2 mask .
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LIGA技术中的X射线掩膜
X Ray Mask in LIGA Process
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用一次成型法制作了以聚酰亚胺为衬基、以Au为吸收体的X射线光刻掩膜。
The X ray lithography mask using polyamide as substrate and using Au as a absorber was fabricated by one step forming .
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PECVD淀积Si3N4作为光刻掩膜版的保护膜
Silicon Nitride Thin Film Deposited by PECVD as a Protecting Layer on Photolithography Mask
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该玻璃基板还可应用于光盘、光盘母盘、液晶显示器、光掩膜、IC等基板。
The glass panels can be also applied to optical disks , liquid crystal displays , photomasks , IC substrate , etc. .
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KOH溶液无掩膜腐蚀加工硅对称梁技术研究
Study on Maskless Etching of Silicon Symmetric Beam-Mass Structure in Aqueous KOH
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ROM存贮矩阵掩膜自动编辑程序设计
Auto Edition Program Design for Mask ROM Matrix
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对LIGA工艺掩膜、X射线光刻、电铸及塑铸等进行了工艺原理分析。
The principles of LIGA process on mask , X ray lithography , electroform and model were analyzed .
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沟道应力的模拟方法则采用掩膜版边缘错位模型(mask-edgedislocationmodel),应力测量方面采用拉曼光谱法。
Channel stress is simulated by using mask-edge dislocation model and actual stress is also measured by Raman spectroscopy .
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在介绍实验流程之前,首先介绍了SiC中的杂质、离子注入技术、离子注入存在的问题,以及离子注入后的退火过程中,所涉及到的退火掩膜问题。
First , ion implantation technology , problems in the ion implantation and annealing cap in the annealing process after ion implantation have been introduced .
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相位掩膜板移动法制作DFB光纤激光器
DFB Fiber Laser Fabrication by Moving Phase Mask
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该系统支持BMP格式掩膜图形输入,拥有完整的衍射和驻波模型。
This system supports the input of masking pattern in BMP format and includes integrated diffraction and standing wave model .
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对信号进行外延后进行EMD,然后利用掩膜信号对IMF分量进行延拓后再进行希尔伯特变换;
We extend the data before using EMD , and then we extend the IMF based on making signal before using Hilbert transformation .
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论文第二章主要从遥感影像几何纠正、拼接、掩膜、增强和分类等方面对LANDSATTM/ETM+影像进行预处理。
In chapter two , some pre-processes are given to the multi - temporal Landsat TM / ETM + remote sensing image .
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这里提出的结构解决了这个问题,它利用标准CMOS晶体管来实现非易失性存储器,这样就不需要额外的掩膜或工艺步骤。
The proposed structure circumvents this problem by creating non-volatile memory cells from standard CMOS transistors . Thus , no additional masking or processing steps are necessary .
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采用此公式和探针的原位参数对掩膜板的AFM线宽测量结果进行了修正。
The amendment expressions and the effective parameters have been utilized to amend the result of the AFM linewidth measurement on a microelectronic mask .
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介绍了用相位掩膜方法制作光纤布拉格光栅(FBG)以及镀金的FBG温度传感器。
Fiber Bragg gratings ( FBG ) prepared in terms of a phase mask technique and the FBG temperature sensor with plating gold were introduced .
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把一个二维物体的彩色负片经电子分色、翻拍成R、G、B三张正片,分别用它们作掩膜,在同一张DCG干板上曝光三次。
A color photograph is electronic colour separated and copied into three positive films of R G B. Using them as a mask respectively , a DCG plate is exposed three times .
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MEMS工艺几何仿真是MEMSCAD关键技术之一。通过工艺几何仿真可以检验器件掩膜版图及其加工工艺流程设计的合理性;
As a key technology of MEMS CAD , MEMS process geometric simulation from process and layout is a requirement of top-down design and bottom-up verification in the MEMS integrated design platform .