空穴

GaAs中空穴陷阱A，B能级的热力学性质

Thermodynamic properties of hole traps a and B in GaAs

我们用电容瞬态技术研究了P型硅中金的空穴俘获截面与温度的关系。

The temperature dependence of hole capture cross section of gold in p-type silicon was studied by capacitance transient technique .

用C（60）为空穴缓冲层的高效率有机电致发光器件

C_ ( 60 ) as a Hole-injecting Buffer Layer for Improvement in Efficiency of Organic Electroluminescent Devices

利用临界空穴扩张比参数V（GC）表征材料的延性断裂韧度

The Critical Void Growth Ratio V_ ( GC ) a New Ductile Fracture Toughness

VOx作空穴注入层的低启亮电压有机发光二极管

Low Turn-on Voltage Organic Light-emitting-diodes with a Hole-injecting Layer of VO_x

鉴别出非晶态PET中主要载流子类型属空穴型。

It hasbeen confirmed that the main species of charge carriers of amorphous PET are the holes .

应变硅pMOS反型层中空穴迁移率k·p及蒙特卡罗模拟研究

K · p and Monte Carlo Studies of Hole Mobility in Strained-Si pMOS Inversion Layers

在半导体材料中维持电流的最小单元，在P型硅中是空穴，在N型硅中是自由电子。

The smallest unit that supports electron flow in a semiconductor material ; a hole in P-type silicon or a free electron in N-type silicon .

应变Si/（001）Si（1-x）Gex空穴有效质量各向异性

Anisotropy of hole effective mass of strained Si / ( 001 ) Si_ ( 1-x ) Ge_x

CF钢临界空穴扩张比参数的测试研究

On The Critical Void Growth Ratio For Steel CF

由于二氧化钛纳米管具有p型传导特性，可以显著增大空穴传输层中载流子的迁移率。

When titania nanotubes are doped into the hole-transport layer , the hole mobility of the device is greatly increased due to the good p-type conductibility of titania nanotubes .

器件显示出良好的直流特性，其跨导和空穴迁移率比传统Si器件分别提高了30%和50%。

The transconductance and hole mobility enhance 30 % and 50 % , respectively , compared with that of conventional bulk Si .

研究区黄铁矿的热电性系数揭示，各矿体的黄铁矿热电性以空穴型（P型）为主，其出现率均在85%以上。

The thermoelectricity coefficient of pyrite in study area reveals that each orebody pyrite thermoelectricity in cavitation model ( P type ) primarily , its emergence rate all in 85 % .

多数载流子-一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。

Majority Carrier - A carrier , either a hole or an electron that is dominant in a specific region , such as electrons in an N-Type area .

具有局域空穴槽结构的SOILDMOS击穿机理

The Breakdown Mechanism for SOI LDMOS with Local Holes Trench

磁控溅射法制备TiO2空穴缓冲层的有机发光器件

Investigation on organic light-emitting diodes with TiO_2 ultra-thin films as hole buffer layer by RF magnetron sputtering

其他原子电子壳层的电子将填补这些空穴，其原子电子位置将重排，并发射X射线和俄歇电子。

The vacancies in atomic shells give rise to rearrangements in the shells which are accompanied by the emission of X ray and the ejection of Auger electrons .

通过衬底热空穴（SHH，SubstrateHotHole）注入技术，对SHH增强的薄SiO2层击穿特性进行了研究。

SHH ( Substrate Hot Hole ) enhanced breakdown characteristic of thin SiO 2 is investigated by using SHH injection techniques .

快速氩离子在固体中2s和2p空穴的产生过程

2S and 2p vacancy production process of swift Ar ion in solid

随着Al2O3含量的增加，电子空穴电导率变化不明显，自由电子电导率减小。

The electron hole conductivity had no change while free electron conductivity decreased with the increase of the Al_2O_3 content .

在三维弹性波散射问题的Born近似解基础上，进一步分析了在纵波入射条件下二维散射问题的Born近似解，对铝质长杆中的椭圆形空穴缺陷的散射场情况进行了对比分析；

According to the Born approximation solution of the scattering of three-dimensional elastic waves , the scattering from an ellipse void in a long Al rod is analyzed comparatively .

但TiO2只有吸收紫外光时才能形成电子一空穴对，且电子和空穴很容易复合，使其光电催化活性降低，阻碍了TiO2的实际应用。

But the absorption band of TiO_2 is only limited in ultraviolet region , which hinders its practical application .

空穴传输层NPB对OLED性能的影响

Influence of Hole Transport Layer NPB on Performance of OLED

然而由于ZnO其固有的缺陷&光生电子-空穴对容易复合，这降低了其光催化活性。

However , ZnO photocatalysts have an inherent and obvious drawback , that is , the photogenerated charge carriers ( hole-electron pairs ) can recombine easy .

加入微量的H2O2有利于·OH的形成从而提高光催化降解反应的效果，而过量的H2O2会与壳聚糖在催化剂表面发生竞争，减少·OH的生成或俘获光致空穴。

Adding a little of H_2O_2 was in favor of creating hydroxyl that can enhance the effect of photocatalysis degradation reaction . However , superfluous H_2O_2 can decrease hydroxyl .

同时，Zn2+可能作为光生载流子的浅俘获中心，导致表面界面电荷转移加速，从而延长光生电子/空穴对的寿命并抑制其复合，有效地提高了TiO2薄膜光电催化活性。

It is initially thought that Zn 2 + acts as surface-interface shallow trap and favors the suppression of photogenerated electron / hole pairs .

蓝光和红光发光分别起源丁β-Ga2O3纳米线中氧空位的电子与镓-氧空位对以及N等杂质的空穴之间的复合。

The blue and red light emissions originate from the recombination of an electron on an oxygen vacancy and a hole on a gallium-oxygen vacancy pair and the nitrogen etc dopants , respectively .

随着掺Ag量的增加，PL光谱强度下降，这说明Ag掺入抑制了光生电子空穴的复合。

The PL intensity decreased with increasing of contents of Ag doping , suggesting that doped Ag inhibited recombination of photoinduced electrons and holes .

在p型材料的研究中，我们也预言了空穴自旋弛豫时间丰富的非单调温度、浓度依赖关系。

In the p-type case , we also predict rich nonmonotonic features in the temperature and density dependences of the hole spin relaxation time , which result from the variation of the hole-impurity and hole-phonon scattering strength .

但是，光照TiO2产生的光电子和空穴会很快复合，这大大限制了其在光解反应的效率。

However , the photoinduced electrons and holes in TiO2 may experience a rapid recombination , which diminishes the efficiency of the photocatalytic reaction significantly .