雪崩光电二极管

雪崩光电二极管应用特性的仿真研究

Simulation Study of the Application Characteristic of Silicon Avalanche Photo diode

PIN雪崩光电二极管建模及其特性的研究

Study on Model and Characteristic of PIN Avalanche Photodiodes

用于电路模拟的PIN雪崩光电二极管模型

PIN Avalanche Photodiode Model for Circuit Simulation

多层梯度层InGaAs（P）／InPSAGM雪崩光电二极管

InGaAs ( P ) / InP SAGM Avalanche Photodiode with Multi-gradient Layers

雪崩光电二极管（APD）的增益严重地受到温度的影响。

APD 's gain is strongly affected by temperature changes .

本论文主要研究雪崩光电二极管（APD）的频率响应及接收机的噪声和灵敏度特性。

The paper study the frequency response , noise and sensitivity characteristics of avalanche photodiodes ( APD ) .

然后讨论了目前针对雪崩光电二极管存在的边缘提前击穿问题所使用的几种结构，并根据泊松方程，计算出雪崩光电二极管内部电场方程，通过matlab模拟仿真出在不同电压下的电场分布。

Then several structures that can be used to suppress pre-breakdown of avalanche photodiode are discussed . The electric field distribution in APD is calculated according to Poisson equation , and simulated using matlab .

雪崩光电二极管（APD）作为探测元件实现光电转换广泛应用于激光脉冲探测技术中。

As a new photoelectrical detector , avalanche photodiode ( APD ) has been widely used in the detection system .

本文小型全固态焦平面成像激光雷达是以盖革模式（Geigermode）雪崩光电二极管（APD）为探测器的三维成像雷达。

In this paper , the small solid-state laser radar imaging focal plane is Geiger mode avalanche photodiode tube ( APD ) detector for 3D imaging radar .

采用半导体致冷技术，对雪崩光电二极管（APD）快速降温，最低温度可达到-35℃，并对其低温特性进行了测试。

Thermoelectric cooling is used to cool the avalanche photodiodes rapidly , and can achieve the lowest temperature : - 35 ℃ .

平面型雪崩光电二极管（APD）在结弯曲处具有高的电场，导致在结边缘的提前击穿。

The edge pre-breakdown of planar-type avalanche photodiode ( APD ) is resulted from the intense electric field at the junction bend .

介绍了雪崩光电二极管（APD）和光电倍增管（PMT）的工作原理、结构及其特性；

The operating principles , structures and characteristics of avalanche photodiode ( APD ) and photomultiplier tuber ( PMT ) are presented .

低漏电高增益InGaAs/InPSAGM雪崩光电二极管

Low Dark Current High Gain InGaAs / Inp SAGM APD

为保证雪崩光电二极管（APD）在温度变化的情况下始终处于最佳工作状态，人们研究了多种偏压控制方案。

In order to ensure the APD 's optimum operating in conditions of different temperature , many bias voltage control schemes have been designed .

简要介绍了雪崩光电二极管（APD）阵列光子计数成像原理，建立了基于泊松点过程的APD阵列的单光子响应模型。

A photon counting image model based on avalanche photodiode ( APD ) arrays response characters and Poisson point process of photons was developed .

本文在已有的电路模型基础上，在ADS中进行模拟仿真，分析雪崩光电二极管各个不同层厚度对频响的影响，以及正面和底部光照射对于频响的影响。

According to the existing equivalent circuit model influence on frequency response from different thicknesses and doping of avalanche photodiode is simulated using ADS , and so is positive illuminating and back illuminating .

该通信系统还受背景光、雪崩光电二极管（APD）增益和调制消光比等因素的影响。

The results also show that the performance of this communication system can be affected by background optical , APD gain and modulation extinction ratio .

介绍了载流子倍增层采用超晶格雪崩光电二极管（APD）的原理，分析了影响APD特性的离化机理。

The principle of the avalanche photodiode with superlattice multipli - cation layer is described and the ionization mechanism related to the devices properties is analyzed .

系统利用雪崩光电二极管APD作为光电接收器件，采用软硬件结合的智能温度补偿方案对APD进行温度补偿。

In the system , APD is used as photoelectric detector and intelligent temperature compensation method based on hardware and software is applied to compensate APD .

本文用电光采样技术测量了高速Ge雪崩光电二极管的脉冲响应特性，利用计算机进行快速傅里叶变换（FFT）运算，得到了探测器的频率响应曲线。

The present paper reports the characteristic of impulse response of a high-speed Ge avalanche photodiode determined by using electro-optic sampling . The frequency response curve of the photodetector was obtained by performing fast Fourier transforms ( FFT ) .

采用雪崩光电二极管（APD）的WebbGaussian模型，对月地激光链路跟瞄误差和背景光对误码率的影响进行了理论分析和数值仿真。

The effects of the pointing error and background light in the lunar-earth laser link on the BER are analyzed by using Webb-Gaussian model of APD ( avalanche photodiode ) and are also simulated with computer .

本文主要分析的是SAGCM结构的InGaAs/InP材料雪崩光电二极管。

This paper mainly analyses InGaAs / InP avalanche photodiode with sagcm structure .

雪崩光电二极管（APD）作为高灵敏光探测器件，为降低暗电流噪声需要半导体热电制冷器来降低其工作环境温度。

Avalanche Photodiode ( APD ) is used for photon detector with high sensitivity . Its working environmental temperature for the purpose reducing dark current needs to be lowered by a semiconductor thermoelectricity cooling apparatus .

InGaAs/lnGaAsP/InP分隔吸收区、梯度区、倍增区的雪崩光电二极管（SAGMAPD）具有小的暗电流、低的雪崩倍增噪声和高的增益-带宽乘积。

InGaAs / InGaAsP / InP seperate absorption , grading and multiplication avalanche photodiodes ( SAGM-APD 's ) have low dark current , low multiplication noise , and high gain-bandwidth product .

本文结合研制的InGaAs/InPSAGM雪崩光电二极管，讨论了SAGM-APD的技术界线和最佳工作特性。

This paper , based on the fabricated devices , discusses technical limitations and optimum operation characteristics for the InGaAs / InP SAGM avalanche photodiode .

雪崩光电二极管（APD）是一种量子效率高、灵敏度高、频率响应特性好的光电探测器，在激光雷达、微光探测、光纤通信等领域中有着重要应用。

Avalanche photodiodes ( APD ) is a kind of photoelectric detectors with high quantum efficiency , high sensitivity and good frequency response . APD is widely used in laser radar , weak light detection and fibre communication .

本文着重介绍了半导体雪崩光电二极管（APD）的研究现状和应用，以及一种新型的单光子探测器&真空雪崩光电二极管（VAPD）的结构，原理和特性。

A overview of the basic structure , operating principle and properties for a new single-photon photo-detector , called vacuum avalanche photodiode ( VAPD ), is presented too .

雪崩光电二极管在195V偏压情况下，可以达到最佳接收效果。

When the reverse bias voltage of the APD is 195V , the optimal receive has been reached .

本论文的目的是基于商售雪崩光电二极管（APD，AvalanchePhotodiodes）的特点，为设计出一种稳定、高效和低噪声单光子探测器系统做前期技术研究。

The purpose of this article is in order to design a kind of steady , high-efficient and low noise single-photon detector system based on the character of commercially available avalanche photodiodes ( APD ), and do some previous technical research .

分析了大气信道、雪崩光电二极管（APD）的噪声对光脉冲产生的影响，在此基础上，给出了PPM调制接收机APD探测器的输出数学模型，得到了APD探测器的输出误码特性。

Based on the analysis of the atmospheric channel and avalanche photodiode noise , the mathematical model of the output of the APD detector in the PPM receiver is discussed and the bit error rate of the APD detector is calculated and analyzed .