Silicon-On-Insulator

Experiments and measurement show that the surface quality of SOG materials mainly depends on the used silicon-on-insulator ( SOI ) wafers .

所研制出的光波导材料表面质量主要取决于所用绝缘体上硅（SOI）材料。

Degradation mechanism of silicon direct bonding / silicon-on-insulator ( SDB / SOI ) bipolar devices is discussed .

对硅片直接键合/绝缘体上硅（SDB/SOI）双极电路的退化机理进行了描述。

Research on improved methods of reduction of bend loss of silicon-on-insulator waveguides

SOI波导弯曲损耗改善方法的研究

Silicon-On-Insulator : Si Integration Technology in the 21st Century

SOI技术&21世纪的硅集成技术

Progress in Research on Silicon-on-insulator Optical Waveguide Switch

SOI光波导开关研究进展

Design of a Compact Multimode Interference Optical Switch in Silicon-on-Insulator

紧缩型SOI多模干涉光开关的设计

Design of 4 × 4 Area Modulation Silicon-on-insulator Multimode Interference Coupler Optical Switch

4×4区域调制多模干涉耦合器SOI光波导开关的设计

Study on Silicon-on-insulator Integrated Optical Waveguide Devices

SOI集成光波导器件的基础研究

Optical Waveguide Devices and Improvement of Their Sidewall Surface Roughness in Silicon-on-Insulator

SOI基集成光波导器件及表面粗糙度改善的研究

Fabrication of Silicon-on-Insulator Structure with Si_3N_4 as Buried Insulating Films by Epitaxial Layer Transfer

多孔硅外延转移技术制备以氮化硅为绝缘埋层的SOI新结构

A novel integration of long wavelength photodetectors on Silicon-on-Insulator racetrack resonator was designed .

设计了一种基于SOI跑道谐振腔滤波的具有波长选择性能的长波长集成光探测器。

Silicon-on-insulator ( SOI ) technology holds great promise in the fabrication of high-temperature devices and circuits .

技术在高温器件和电路方面有着广泛的应用前景。

Ultrafast Carrier Dynamics in Surface of Silicon-on-Insulator

绝缘衬底上硅表面载流子的超快动力学研究

Corrugated High-order Bragg Grating on Silicon-on-insulator Ridge Waveguides Fabricated by Photolithography

高阶布拉格光栅在SOI脊形波导上的光刻制作

Simulation and Fabrication of Optical Waveguide Devices in Silicon-on-Insulator Deadtime Simulation Using Tappered RC Ladder Network as Basic Building Block

SOI基光波导器件的模拟与实现用RC梯形网络实现的大延时模拟单元

The fabrication of SOI ( Silicon-on-insulator ) materials is introduced . The SOI MOSFET hot carrier degradation mechanism is discussed .

介绍了绝缘体上硅（SOI）材料的制作方法，阐述了SOIMOSFET器件的热载流子注入效应的失效机理。

Silicon-on-Insulator ( SOI ) Technology , which has a broad prospect of applications , has been gradually replacing the bulk silicon technology .

具有广阔应用前景的Silicon-on-Insulator（SO1）技术已经逐步成为取代现有体硅材料制备方法的核心技术之一。

The combiner is fabricated on a silicon-on-insulator ( SOI ) substrate .

在一个绝缘体上硅的基板上实现了该器件。

The formation process and multi-layer structures of various Silicon-on-Insulator ( SOI ) materials formed by high dose ion implantation , high temperature annealing have been investigated .

本文报道了借助高剂量离子注入、高温退火等技术获得不同类型SOI（SilicononInsulator）材料的形成过程及其多层结构。

Silicon-on-insulator ( abbreviated as SOI ) optical waveguide is the base of silicon-based optical waveguide devices and other integrated optical devices .

SOI光波导是硅基光波导器件的基础，也是实现其它集成光学器件的基础。

The fabrication of Bragg gratings on silicon-on-insulator ( SOI ) rib waveguides using electron-beam lithography is presented .

报道了一种用电子束曝光的方法在绝缘体上硅的脊状光波导上制做布拉格光栅的技术。

CMOS electronics on silicon-on-insulator ( SOI ) wafers has emerged as the microelectronics technology in the 21st century for low-power high-speed applications .

SOI（Silicon-On-Insulator）材料由于其在低功耗、高速CMOS器件方面的应用，被称为二十一世纪的硅基础电路技术。

The fabrication process of a compact planar waveguide etched-grating ( EDG ) demultiplexer based on silicon-on-insulator ( SOI ) is studied .

研究了基于绝缘材料上的硅（SOI）材料的平面波导刻蚀光栅分波器的主要制作工艺。

WLP ( Wafer Level Package ), 3-D Chip Stacking and SOI ( Silicon-on-insulator ) are the three impetuses for the development of wafer bonding technology .

晶圆级封装、三维芯片堆叠和绝缘体上硅技术是推动晶圆键合技术发展的三大动力。

An arrayed waveguide grating ( AWG ) demultiplexer with total internal reflection ( TIR ) mirrors is designed based on silicon-on-insulator ( SOI ) material .

设计了一种基于绝缘体上的硅材料的全内反射型阵列波导光栅解复用器件。

With the development of fabrication technology of silicon waveguide based on the SOI ( silicon-on-insulator ) structure , it becomes possible to integrate the electrical and optical devices on a single silicon chip .

随着基于SOI（silicon-on-insulator）结构的硅波导制作工艺的发展，在同一硅片上集成各种电子和光子器件成为可能。

The lifetime of free carriers in a silicon-on-insulator ( SOI ) rib waveguide , which is used for Raman amplification , is studied in connection with the nonlinear optical loss .

研究了用于喇曼放大的绝缘硅（SOI）脊形波导中自由载流子寿命与非线性光学损耗的关系。

Improved methods of reduction of bend loss of silicon-on-insulator waveguides were simulated and analyzed by means of effective index method ( EIM ) and two dimensional beam propagation method ( 2D-BPM ) .

采用有效折射率方法EIM（EffectiveIndexMethod）和二维束传播算法（2DBPM）对SOI（SilicononInsulator）波导弯曲损耗的改善方法进行了模拟分析。

Silicon-on-insulator ( SOI ) waveguide technology is highly promising for future low-cost photonic integrated circuits due to excellent optical and electronic properties and true compatibility with silicon CMOS integrated circui : technology .

SOI（Silicon-on-insulator）光波导技术同时具有优异的电学和光学性能，并且与成熟的硅基CMOS工艺完全兼容，是发展低成本的光子集成回路的重要趋势之一。

On the other hand , SOI ( Silicon-on-Insulator ) is becoming mainstream technology in sub-micron semiconductor technology due to its completely dielectric isolation and ideal sub-threshold slope , as well as low power-consumption .

另一方面，由于SOI（Silicon-on-Insulator）技术具有更好的隔离性能、理想的亚阈值特性和较低的功率消耗等特点，日益成为半导体行业发展的主流技术。