bf2

Industrial TV system at the top of BF applied in bf2 ~ # in Meishan

炉顶摄像系统在梅山2~高炉的应用

Construction of a BF2 / Peptide Tetramer and Its Application on the Detection of Specific T Cell

BF2/肽四聚体的构建及其在特异性T细胞检测上的应用

The radiation effects of MOS devices implanted BF2 at low dose rate are investigated in some different respects in this paper .

本文从不同方面对BF2~-注入MOS管低剂量率辐照效应进行了深入的研究。

In addition , research on radiation effects of MOS capacitor implanted BF2 + at low dose rate are also made in short .

此外，本文还开展了BF2~+注入MOS电容低剂量率辐照效应的研究工作。

The physical and electrical properties of BF2 + implanted polysilicon film subjected to rapid thermal annealing ( RTA ) are presented .

本文报道BF2~+注入的多晶硅薄膜经快速热退火后的物理和电学性质。

Shallow B + as-implanted profiles can be obtained and channelling effect significantly suppressed by implanting BF2 + molecular ions into silicon , due to low effective boron energy .

用BF2~+分子离子注入n型硅，由于B的有效注入能量减少，可以得到B的浅注入分布，B分布的沟道效应也明显降低。

The most recent furnace relines were 1995 ( BF1 ) and 1996 ( BF2 ) .

最近二次高炉大修是1995年（1号高炉）和1996年（2号高炉）。

It filters the traffic information needed to be sampled from the high speed Internet flows step by step . Secondly , a corresponding BF2 algorithm is designed to lower the false positive situations by reducing setting frequency .

从高速互联网流中逐级过滤出需要抽取的流量信息。第二，设计对应的BF2算法，从减少置位次数方面着手，减少误正情况的发生。

Some advanced technology is adopted including deep trench isolation , SIC , self-aligned Si3N4 / SiO2 composite sidewall as Emitter-Base junction isolation and ultra-thin interior base formed by BF2 implantation .

工艺中采用了先进的深槽隔离技术、选择性集电极注入（SIC）技术、使用自对准Si3N4/SiO2复合侧墙作为E-B结的隔离、用低能氟化硼取代硼注入基区形成超薄内基区。

Calculations for SCARABEE BF2 experiment ( single component UO 2 boiling pool ) and BE + 2 experiment ( UO 2 and steel mixed boiling pool ) were performed , the results approximately agree with the experimental observation .

对SCARABEEBF2实验（单组分UO2沸腾池）及BE+2（UO2钢混合沸腾池）进行了模拟计算，计算结果与实验结果基本吻合。

Since amorphous layers are formed by implanting BF2 into silicon , implanted layers recrystallize using the solid phase epitaxial growth process during low temperature annealing ( 550 ℃) , and then the activated boron concentration as high as 85 % can be achieved .

BF2~+注入硅能形成非晶层，在低温（550℃）退火时，注入层以固相外延形式再结晶，B原子的激活率可高达85%。