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bjt

  • 网络三极管;商务日语能力考试;双极型晶体管;晶体三极管;北京时间
bjtbjt
  1. Key to Understanding BJT 's Current-amplifying Function

    理解晶体三极管电流放大作用的关键

  2. By comparing the performance of two types of preamplifiers , such as transimpedance gain , bandwidth , circuit stability and input noise , a suggestion in the design of high speed preamplifier with BJT transistors was made .

    通过比较两种不同输入结构前置放大器的增益、带宽、电路稳定性以及噪声特性,提出了双极型晶体管实现高速前置放大器的设计方案。

  3. The correlative extraction method for BJT dynamic model parameters

    BJT动态模型参数相关提取方法

  4. Study on a universal drive and protection circuit of BJT

    一种通用的BJT驱动保护电路的研究

  5. Super-high speed BJT analog switch based on current mode technology

    基于电流模技术的超高速BJT模拟开关

  6. A Simple Method of Combining Protel Software with BJT Model

    Protel中加入BJT模型的简便方法

  7. Reverse conduction of BJT & its application in TV technology

    BJT的反向导通及其在电视技术中的应用

  8. Study on the characteristics and applications of BJT adjoint operational amplifier

    双极型伴随运算放大器的特性及应用研究

  9. Fourier coefficient model and its polynomial approximation in analysis of BJT circuits

    BJT电路分析的FOURIER系数模型及多项式近似

  10. The advantages of power MOSFET devices over BJT were described .

    研究总结了功率MOSFET器件与BJT器件相比的发展优势。

  11. The effect of γ ray radiation on the parameter of BJT silicon device

    γ射线辐照对BJT硅器件参数的影响

  12. Analysis of the Series Element of Planar RTD Connected with BJT

    平面型RTD与BJT构成的串联单元特性分析

  13. Comparison of teaching method of the three BJT and FET basic amplifiers together is introduced .

    探讨了将BJT和FET的三种基本放大电路放在一起进行对比教学的方法。

  14. Electrical performance analysis of electron irradiated SiGe HBT and Si BJT

    电子辐照SiGeHBT和SiBJT的直流特性分析

  15. An Approximation of Analysis for APD & BJT Optical Receiver Noise in Digital Optical Fiber Communication

    数字光纤通信中APD&BJT光接收机噪声的近似分析

  16. The students can use BJT and FET appropriately when they understand their characteristic .

    认识三端元件的特性之后,未来能正确的使用这个元件。

  17. Extracting Noise Parameters of Microwave BJT Device

    微波BJT器件噪声参数的抽取

  18. Low Temperature BJT Model With Polysilicon Emitter

    多晶硅发射区双极晶体管低温器件模型

  19. The Impulse Interferences of the BJT Excitation Device and Their Elimination

    BJT励磁装置脉冲干扰及其消除

  20. Design of Low-Voltage Higher-Order Current-Mode Log-Domain Filter Based on BJT

    低电压全BJT高阶对数滤波器设计

  21. Precise Prediction on the Operating Peak Junction Temperature for Power Microwave Si BJT Accurate mapping method of skew gear

    精确预计SiBJT微波功率器件峰值结温的方法斜齿轮的精确测绘

  22. Comparison of the g-ray radiation effect of SiGe HBT and Si BJT

    SiGeHBT和SiBJT的γ射线辐照效应比较

  23. Development the water-soluble blue-green sprays print ink to capitalize upon Ink Blue BJT Crystals

    用酸性水溶天蓝研制水溶性的青色喷墨打印墨水

  24. Measurement of parameters FL and γ of 1 / f noise in bjt & based on the measuring method of noise current spectra

    双极晶体管的1/f噪声参数fL和γ的测量提取&噪声电流谱测量法

  25. It was shown that SiGe HBT had a better anti-radiation performance than Si BJT .

    这说明SiGeHBT具有比SiBJT更好的抗辐照性能。

  26. A-centers and e-centers of γ - ray induced in BJT type silicon devices

    γ射线在BJT型器件中引起的A中心和E中心

  27. A new design of BJT analog switch using high speed unit such as emitter follower , current mirror and unsaturated current switch is presented .

    本文采用射极跟随器、电流镜、非饱和电流开关等高速单元电路设计了一种新颖的BJT模拟开关。

  28. In addition , IGBT has the both advantages of BJT and power MOSFET , making it applied in more and more areas .

    此外,由于IGBT兼具有双极型功率晶体管BJT和功率MOSFET的优点,使其在越来越多的领域得到运用。

  29. The I-V characteristics of different connections of RTD / BJT were also dealt with by using both advanced design system ( ADS ) simulation and experiments .

    利用高级设计系统ADS电路模拟和实验测量对PRTD与BJT串联单元的不同串联方式的电压-电流特性进行了深入分析。

  30. Bipolar junction transistor ( BJT ) has the self-heating phenomena , which seriously affects the properties of transistor .

    对于双极性晶体管,由于自身存在的自加热现象,严重地影响着器件的特性。