dgo
- 网络国防部;双栅氧工艺
dgo-
It was discovered that the gingival epithelial thickening was one of the important reasons of causing DGO recently .
近来发现，牙龈上皮细胞增厚也是引起DGO的重要原因之一。
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The dual gate oxide ( DGO ) technology has been widely used in high-voltage CMOS process , it can integrate both thick gate oxide device and thin gate oxide device in a same chip .
双栅氧工艺（dualgateoxide）在高压CMOS流程中得到了广泛的应用，此项工艺可以把薄栅氧器件和厚栅氧器件集成在同一个芯片上。
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A novel dual gate oxide ( DGO ) process is proposed to improve the performance of high voltage CMOS ( HVCMOS ) devices and the compatibility between thick gate oxide devices and thin gate oxide devices .
提出了一种新的双栅氧（dualgateoxide，DGO）工艺，有效提高了薄栅氧器件与厚栅氧器件的工艺兼容性，同时提高了高低压器件性能的稳定性。