goi

Optimum Design and Simulation Analysis of Temperature Field on Sapphire Crystal Growth with GOI Method

GOI法蓝宝石单晶生长温场优化设计与模拟分析

The results show that during the growth of crystal with GOI method proper program of temperature control is good for the quality of crystal .

结果表明，在GOI法蓝宝石晶体生长中，合适的降温控制程序有利于提高晶体生长质量，晶体生长速率会随着加热温度的降低而快速增加。

Petroleum inclusion abundance ( GOI ) is an important parameter for locating the petroleum reservoirs , though it is affected by many factors .

油包裹体丰度是确定古油藏的重要参数，统计结果受多种因素影响。

A ramped current stress for intrinsic charge to breakdown measurements with gate injection mode is used to examine the characteristics of these ultra thin gate oxides and the effect of metal contamination on GOI .

利用斜坡电流应力和栅注入方式测量本征电荷击穿来评估超薄栅氧特性和金属沾污效应。

The most important defect in large size ingots is void , which can degrade the gate oxide integrity ( GOI ), so as to affect the yields and stability of devices and 1C .

大直径硅单晶、硅片中的最重要的缺陷之一是VOID，它会严重影响硅器件、集成电路的生产成品率和性能稳定性。

By using GOI technique for fluid enclosure , paleo gas-water contact of gas reservoir has been restored , its revolution history and preservation have also been analyzed comprehensively with relation study of paleo-present gas water contact .

采用流体包裹体GOI技术，恢复了气藏的古气水界面，通过研究古今气水界面的关系，综合分析了气藏演化历史和保存情况。