jfet

A Study on JFET of High Input Impedance and Low Noise

高输人阻抗低噪声JFET的研究

Power Loss of Power JFET Facing to Low Voltage and High Frequency Switching Application

面向低压高频开关应用的功率JFET的功耗

Cascade JFET constant current device is of very high dynamic impedance .

串级JFET恒流器件具有非常高的动态阻抗。

The Principle and Design of a New Type JFET Ultra High Input Impedence Amplifier

新型JFET超高阻抗放大器原理和设计

JFET voltage controlled gain amplifier and its application

结型场效应管压控增益放大器及其应用

The pressure-magnetoelectric effect of JFET is discussed by using standard relaxation techniques .

本文用标准的松弛方法研究了结型场效应晶体管的压磁电效应。

Radiation Hardened JFET / SOS Devices : Technique and Gamma Radiation Effects

辐射加固的JFET/SOS：工艺及γ辐射效应

Characteristics of Cascade JFET Constant Current Device

串级JFET恒流器件特性分析

Switching Properties of a High-Voltage Power Silicon JFET

硅高压功率JFET开关性能

The Fabrication Technique of JFET Differential Pair in Op-Amps And Its Prospect

运算放大器中JFET对管的制作技术及其发展前景

Design of JFET Low Noise Preamplifier

一款JFET低噪声前置放大器的设计

Theoretical analysis of the Pressure-magnetoelectric effect of JFET

JFET压磁电效应的理论分析

High temperature characteristics of 6H-SiC JFET

6H-SiCJFET的高温特性

Equivalent Input Noise of Cascade JFET Amplifier

级联结型场效应管放大电路的等效输入噪声

A JFET marginal oscillator used in nqr , nmr and ESR experiments

用于NQR、NMR和ESR的JFET边限振荡器

A Type of Negative-resistance Device Constructed by Complementary JFET

一种互补结型场效应管负阻器件

JFET resistance , accumulation resistance , channel resistance and drift region resistance is the most important components of on-resistance .

JFET区电阻、沟道电阻、积累层电阻和漂移区电阻是导通电阻的四个最主要的组成部分。

The low noise charge sensitive preamplifier which designed by JFET and integrated circuit operational amplifier for GaAs semiconductor detector is described in this paper .

介绍了一种用于GaAs半导体探测器，以场效应管和集成运放为主要器件的低噪声的电荷灵敏前置放大器的设计。

In this paper , ⅰ - ⅴ characteristic , limiting voltage , dynamic impedance and the temperature coefficient of current of the cascade JFET device are discussed .

本文讨论了串级JFET恒流器件的伏安特性、起始电压、动态阻抗以及电流温度系数。

The 2nd-order effect necessary for power MOSFET 's was taken into account in the macro-model and behavioral model was used to deal with JFET resistance .

此模型考虑了功率MOSFET必要的二阶效应，并采用行为级模型来处理JFET电阻。

The result of compensation attains 69 % ~ 99 % . The unstable output under the grid voltage of JFET Which produced by temperature drift was finish well .

补偿效果从69%到99%，很好的解决了温度漂移所带来的场效应管栅极电压下的不稳定输出。

A precision marginal oscillator-type nuclear quadrupole resonance ( NQR ) spectrometer using field effect transistors ( JFET 'S ) is described in this paper .

本文介绍一种精密的场效应管边限振荡器型核四极矩共振（NQR）谱仪。

The authors analyzed the circuit principle of JFET voltage controlled gain amplifier and expounded the character and practical value of its circuit , then provided the theory basis for designing integrated circuit .

分析了结型场效应管压控增益放大器的电路原理，并阐明了其电路的特性和实用价值，为集成电路设计提供了理论依据。

The operating point of Q1 transistor depends on electrical and structural parameters of Q1 and Q2 transistors which compose the cascade JFET constant current device .

Q1管的工作点，决定于组成该恒流器件的两个晶体管的电学参数和结构参数。

A method for approximately estimating the SPICE modelling parameters of JFET is presented , which is intended to be implemented on a automatic test system configured with GP & IB.

本文叙述应用具有GP-IB接口的自动测试系统对结型场效应管的SPICE模型参数进行测试的近似方法。

Through the experiment with the circuits thermal drift , of TYZ-3 intelligent soil nutrition gauge , J-type field effect transistor ( JFET ) was found as the major cause of circuits thermal drift .

本文简要综述了国内外的电路温度补偿方法，对TYZ-3智能型土壤养分测试仪的温度漂移进行了试验研究。