snapback

Results indicate that snapback voltage , snapback current and sustaining voltage increase with controlled voltage .

结果表明，随控制电压的增大，转折电压、转折电流和维持电压均增大。

Still , he knows that even the most prolific club kid must eventually hang up his snapback hat .

不过，他知道，甚至连最赚钱的俱乐部最终也会收场。

The unloading-rebound curve of the soft soil can be roughly divided into two stages , initial rebound stage and snapback stage .

珠海滨海相软土卸载回弹曲线大致可以分为两个阶段，回弹初始阶段以及第二阶段的快速回弹阶段。

Diffused resistor model under ESD stress in linear , saturation , multiplication and snapback , and secondary breakdown regions was analyzed .

对ESD应力下扩散电阻的四个区域：线性区、饱和区、雪崩倍增和负微分电阻区、二次击穿区的模型进行了分析。

The proposed DDSCR device which features the symmetrical or asymmetrical snapback I-V characteristics can be implemented for varies applications .

该器件具有对称性或非对称性骤回I-V特性，可以用于多种应用场合。

The reverse snapback phenomena ( RSP ) on I-V characteristics of static induction thyristors ( SITH ) are physically researched .

研究了静电感应晶闸管的反向转折特性。

The experiment result shows that the holes generated by avalanche can be injected into gate oxide of a NMOSFET biased into snapback , and then both hole trapping and interface state generation can be found .

实验结果发现突发击穿（snapback），偏置下雪崩热空穴注入NMOSFET栅氧化层，产生界面态，同时空穴会陷落在氧化层中。

The United States the JCPoA in 2018 but recently requested to initiate the " snapback " mechanism , which allows a participant of the deal to seek re-imposition of the multilateral sanctions lifted in 2015 .

美国在2018年退出《联合全面行动计划》，但最近要求启动“快速恢复制裁”条款，该机制允许协议参与者寻求恢复2015年取消的多边制裁。

The behaviors of the Snapback stress in LDD NMOSFET are studied in ultra-short and ultra-thin LDD NMOSFET ' s. The avalanche hot holes and electrons together inject into oxide during Snapback stress , much interface states and neutral electron traps are generated .

对超短超薄LDDnMOSFET中的Snapback应力特性进行了研究。Snapback应力过程中雪崩热空穴和电子同时注入栅氧化层，会产生界面态和大量中性电子陷阱。

After pre-HE stress , the generated interface states can reduce the number of holes being injected into gate oxide generated by avalanche process during snapback stress , which causes the MOSFET snapback degradation to decrease in on-state and off-state modes . process . In the process of the E.

在预加热电子（HE）应力后，HE产生的界面陷阱在snapback应力期间可以屏蔽雪崩热空穴注入栅氧化层，使器件snapback开态和关态特性退化变小。