tetramethylsilane

  • 网络四甲基硅烷;四甲基硅
tetramethylsilanetetramethylsilane
  1. During the deposition of nanocrystalline silicon carbide films , with the increase of tetramethylsilane concentration in the reactive gas source , the crystal structure of silicon carbide whose grain size decreases changes from hexagonal to cubic and the particle shape changes from spherical to cauliflower-like .

    在制备纳米碳化硅薄膜的沉积过程中,随着四甲基硅烷浓度的增大,纳米碳化硅晶体结构由六方转变为立方结构,颗粒形状由球状变为菜花状。

  2. UV Laser MPI Spectra and TOF Mass Spectra of Tetramethylsilane

    紫外激光作用下四甲基硅的MPI光谱和TOF质谱研究

  3. Multiphoton ionization spectrum and mass measurement of tetramethylsilane

    四甲基硅的多光子电离光谱和质谱

  4. Multiphoton Ionization and Dissociation of Tetramethylsilane at 410 ~ 373 nm Laser Radiation

    410~373nm激光作用下四甲基硅的多光子电离与解离

  5. Violet ( ultraviolet ) laser MPI of tetramethylsilane and resonant ionization of silicon atom

    紫(外)激光作用下Si(CH3)4的MPI与Si原子的共振电离

  6. Spectrum study on Tetramethylsilane Multiphoton Ionization

    四甲基硅多光子电离的光谱研究

  7. Multiphoton ionization ( MPI ) mass spectra distributions of tetramethylsilane in gaseous phase are investigated using a quadrupole mass spectrometer and a pulsed molecular beam at 355 nm laser radiation .

    在355nm的激光作用下,利用扩散分子束技术和四极质谱装置相结合研究了气相Si(CH3)4分子多光子电离(MPI)质谱分布。

  8. Multiphoton dissociation ( MPD ) of tetramethylsilane and two photon resonance three photon ionization of silicon atoms are studied with parallel plate vacuum cell at violet laser radiation in the wavelength range 410 ~ 404nm .

    在410~404nm的紫激光作用下,利用平行板电极装置研究了Si(CH3)4的多光子解离(MPD)及Si原子的双光子共振三光子电离。

  9. On the structural studies of porphyrin compounds , chemical ionization mass spectrometry using mixture of tetramethylsilane and methane as reagent gas provide information about [ M + 73 ] ~ + ions and the results as the limitations of the method are described .

    四甲基硅烷作反应气的化学电离质谱对卟啉的分析能提供有关[M+73]~+离子和分子结构的信息。本文研究了该方法的实验条件、分析结果和局限性。