介电常数

气体相对介电常数εr的测量

Measurement of Dielectric Constant of Gases

沉积偏压对CNx薄膜结构性能及介电常数的影响

Effects of Bias Voltage on Structure and Dielectric Constant of CN_x Films

基于BP神经网络的材料介电常数测量

Measure of Material Permittivity Based on BP Neural Network

用H（01）型圆柱谐振腔测量介质材料介电常数的原理及方法

Principle and Method To Measure The Permittivity of Dielectric Material by Using H_ ( 01 ) Type Cylinder Resonator

a-C：F薄膜的介电常数取决于电子极化并随R的增大而上升。

The dielectric constant of a-C : F films is composed mainly of electron polarization and increases with increasing R.

随热处理温度的升高，W型铁氧体空心微球的介电常数降低；

With heat treatment temperature increasing , the complex permittivity of W-type ferrite hollow microspheres decreased ;

用FDTD方法研究颗粒型复合材料微波等效介电常数

Calculating Microwave Effective Permittivity of Particle-filling Composite Materials by FDTD Method

相应地，在表观活化能Em-组成曲线和介电常数εm-组成曲线上出现了双谷。

Correspondingly , " two-valley " appears on apparent activation energy Em versus composition and dielectric constant e_m versus composition curve .

用XRD和阻抗仪测试了相结构及介电常数。

XRD and LCR were used to measure the structure and dielectric constants of the composite ceramics .

论文的主要内容及创新性研究归纳如下：1、研究了sol-gel技术在制备高介电常数复合氧化膜中的应用。

Sol-gel technology was used in making composite oxide films which have high dielectric constant .

碳纳米管组成二维光子晶体的有效介电常数FDTD数值模拟

FDTD Simulation of Effective Dielectric Constant of a Two-Dimensional Photonic Crystal with Carbon Nanotubes

随着Fe含量增加，复介电常数和介电损耗正切值明显减小，但是复磁导率和磁损耗正切大幅增大。

With doping Fe , the permittivity and its loss tangent clearly decrease , but the permeability and its loss tangent increase evidently .

边界层陶瓷电容器（GrainBoundaryBarrierLayerCapacitor）是半导体陶瓷电容器中的最重要的一种，具有很高的表观介电常数。

Grain Boundary Barrier Layer Capacitor ( GBBLC ) is one of the most important kind of ceramic capacitors and show very high apparent dielectric constant .

合成了一系列新型含氟耐高温、低介电常数聚酰亚胺（PI）材料，并对其进行了热性能、电性能等方面的测试。

New fluorinated polyimides with high heat resistance and low dielectric constants have been synthesized by a two step procedure .

当氟原子掺杂浓度（F/Si）为1%时，薄膜介电常数K值小于3。

Some products have been found to be amenable to lower greatly the value of dielectric constant K to below 3 when doped to SiO2 films .

溅射工艺参数对BST薄膜介电常数的影响

Effect of Sputtering Processes on Dielectric Constants of BST Thin Films

结果还表明该结构的偶-奇模特性阻抗Z（eo）随频率变化很大，当相对介电常数εr较小时，变化更大。

It is shown that the even-odd mode impedance changes rapidly with frequency , especially when the dielectric constant er is small .

综述了制备ULSI低介电常数材料的各种CVD技术。

Various CVD technologies for preparing low dielectric constant materials in ULSI circuits are summarized .

与同厚度的BST膜相比漏电流性能有了明显改善，介电常数也有提高，而损耗仍然保持较低。

Low leakage currents , high dielectric constant and low dielectric loss were obtained .

HTPB推进剂的击穿电场强度随体积电阻率的增加而升高，随介电常数的增加而降低。

The dielectric strength of HTPB propellant increases with increasing volume resistivity or decreasing dielectric coefficient .

计算介电常数虚部时出现的动量矩阵元，根据对Ge和Si的介电常数虚部的实验曲线拟合而决定。

The momentum matrix elements in the formula for calculating the imaginary part of dielectric constants are determined by fitting the ε 2 of Ge and Si .

由于DG的低介电常数，亲核试剂仍以引起C&O断裂为主而得醚。

In DG , due to its low dielectric constant , nucleophile effects only C-O scission to form ether .

该计算模型还可以用于高介电常数栅介质和多层栅介质MOS器件的直接隧穿电流的计算。

This model could also be used to calculate direct tunneling currents of MOST with high-k gate dielectrics or stacked gate dielectrics .

通过对微带线特性阻抗公式的理论计算，得出了带线的线宽W、导体层的厚度t、介质的厚度h以及介电常数εr的精度对特性阻抗Z0的影响程度。

Based on theoretical calculation of characteristic impedance of microstrip , the effect of microstrip width , thickness of conductor layer and dielectric layer and accuracy of effective permittivity are investigated .

在一定的相对密度下，复合材料的介电常数和介电损耗随Si3N4含量的增加而增大。

In a range of relative density , dielectric constant and loss tangent of the composites are increased when the Si_3N_4 content is increased .

对于介质薄膜波导的一边或两边复盖有介电常数与光强成正比的非线性介质的三种不同结构，本文导出了三层非线性平面光波导TM波的精确色散关系。

Exact dispersion relations for TM waves guided by thin dielectric films covered on one or two sides media of intensity-dependent refractive indexes have been derived .

研究结果表明，（1）三种单晶中都没有观察到金属Sn纳米晶的表面等离子共振吸收带，这是因为金属Sn的复介电常数无法获得吸收极大值。

( 1 ) There is no SPR absorption of metallic Sn nanoparticles in the three as-implanted crystals due to dielectric function of metallic Sn .

结果表明介电常数ε、折光率n20D及Er（30）是溶剂分类的有效参数。

The result showed that the dielectric constant ε, index of refraction n ~ ( 20 ) _D and E_r ( 30 ) were useful parameters for solvent classified .

镁的掺杂有助于获得细晶高致密的陶瓷，当n（Mg）/n（Ti）为0.06时，致密度最高，常温下相对介电常数高达4100，击穿场强达到3.2MV/m以上。

When the atomic ratio of Mg to Ti is 0.06 , the density reaches the maximum and dielectric constant reaches 4100 and destroyed electric strength rises up to more than 3.2 MV / m.

DGS是通过在微波电路的接地板上蚀刻出蚀刻图案（defectedpattern），以改变电路衬底材料的有效介电常数，从而改变介质上的微带线的分布电容和分布电感。

DGS can change the effective permittivity of material and distributed capacitor and distributed inductance by etching the defected pattern on the ground of microwave circuit .