光学带隙

W掺杂量对非晶态TiO2：W薄膜光学带隙的影响

Effects of W Dope on the Optical Band Gap of Amorphous TiO_2 : W Thin Films

随着Sb掺杂浓度的增加，SnO2：Sb薄膜的光学带隙变大。

As Sb concentration increased , the optical band gap of SnO2 : Sb films were enlarged .

光学带隙的结果表明它与膜中的C、F元素含量和键结构都有关系；

The result of the optical gap shows that it was related to contents of C , F and C F.

石英衬底上的BPxN（1-x）薄膜沉积及P对其光学带隙调制的研究

Phosphor Induced Optical Band Gap Modulation of BP _ x N _ ( 1 - x ) Films

Mn掺杂导致了ZnO晶格常数和光学带隙的增加，并且诱导了微结构的无序性。

Mn incorporation results in the increase of the lattice constant and band-gap energy of ZnO , and also induces microstructural disorder .

采用偏光电反射（ER）谱法测定室温下N~+P结Si间接光学带隙。

The electroreflectance ( ER ) method was used to measure the indirect optical energy gaps in silicon N + - P junction .

本文报导了未掺杂的a&Si∶H/a-si（1-x）Cx∶H超晶格的PPC效应及光学带隙的兰移现象。

The PPC effects and blue shift of optical bandgap in undoped a-Si : H / a-Si_ ( 1-x ) C_x : H superlattices are presented .

Co掺杂会影响样品的可见光的范围内光透过率，对ZAO薄膜的光学带隙变化影响较小。

Co doping will affect the transmittance of the sample , the less impact on the change of the optical band gap of ZAO films .

对等离子体增强化学气相沉积技术（PECVD）制备的微晶硅（μc·Si）薄膜的电导率、光学带隙和晶化率随温度和功率的变化规律进行了研究。

Microcrystalline silicon film was prepared by the plasma enhanced chemical vapor deposition ( PECVD ) . The performance of μ c-Si : H film changed with pressure and temperature has been investigated .

本文主要研究cBN薄膜的制备、光学带隙以及BN（n-type）/Si（p-type）异质结的特性。

This dissertation focuses on the preparation of cBN films , their optical gaps , and the characteristics of BN ( n-type ) / Si ( p-type ) heterojunction .

根据（ahv）2-hv曲线可以得出其光学带隙Eg，且Eg随掺杂浓度的不同而发生变化。

The optical band gaps of films can be obtained according to the ( ahv ) 2 ~ hv plots , and they varied with the content of dopant .

微波ECR-CVD法制备a-C：F：H膜的红外吸收及其光学带隙

IR Absorbance and Optical Band Gap of C : F : H Films Deposited with Microwave ECR-CVD Method

在发光特性方面，通过测试获得In2O3颗粒的紫外可见光透射谱，获得其光学带隙值。

The optical band gap value of In2O3 particles is measured from the UV-Vis transmission spectrum and the photoluminescence spectrum is studied by fluorescence spectrometry .

当生长温度从室温升高至400℃时，sp2团簇的变大使C原子的有序度增强，从而导致薄膜的光学带隙变窄，发光峰红移且半高宽变小。

When the deposition temperature increases from RT to 400 ℃, the sp2 C atom clusters grow and C atoms ordering occurs in the films , leading to the optical gaps becoming narrower , the photoluminescence peak red-shift and the FWHM becoming narrower .

样品的光学带隙比较大，可以达到5.6eV以上。（3）XPS显示，利用溅射法制备的样品中杂质比较少；利用反应溅射法可以得到具有合适化学配比的薄膜。

Optical band gap of the samples is up to 5.6 eV or more . ( 3 ) XPS results showed that the sputtered samples had the fewer impurities . By reactive sputtering method , the stoichiometric film can be obtained .

首先采用MPB软件，分别计算了SiO2Opal的光学带隙以及两种模型（填充模型与核壳模型）下Si-SiO2复合体与Si反Opal的光学带隙。

The photonic band gaps of SiO_2 opal , Si-SiO_2 composite and Si inverse opal were calculated , further the Si-SiO_2 composite and Si inverse opal were endured with filling model and core-shell model .

紫外一可见光透射/反射谱测量发现在534nm处出现一个很强的透射谷/反射峰，表明该光子晶体在534nm的可见光范围内存在一个较宽的光学带隙（PBG）。

The transmission and reflectance spectrum of the sample showed a clear transmission valley / reflectance peak at 534 nm , indicating that the PC had a large photonic band gap in the range of visible wavelength .

使用台阶仪测量退火前后膜厚的变化；用紫外可见分光光度计（UV-VIS）测量了膜的透光谱，并计算了其光学带隙；

The thickness of films was measured by a profilometer ( ET350 , Japan ) before and after annealing and the optical transmission spectrum was obtained by a Ultraviolet-Visible ( UV-VIS ) spectrophotometer ( - 17 , PklinElmer ) and optical bandgap was calculated .

为进一步提高CdSe的应用价值、扩展其应用范围，有必要对CdSe的光学带隙进行调节、改变其导电类型、提高载流子浓度。

With a view to further improving the application value and application areas , it is necessary to adjust the band gap , to change the type of conduction , and to raise the concentration of charge carrier of CdSe .

制备了一系列表面包覆油酸的TiO2超微粒.结果表明，表面包覆油酸的TiO2超微粒的表观光学带隙（Es）随着超微粒粒径减小变小；

A series of TiO2 ultrafine particles ( UFP ) coated with a layer of oleic acid radicals were synthesized , and we found that the apparent optical band gap decreased and the red shift of optical absorption band edge increased when the diameter of TiO2 UFP coated decreased .

随着气体流量比的增大，沉积a-C：F薄膜中的碳含量增大，CF、CF2、CF3含量减少，C-C交链成分增加，从而使得π-π吸收增强，并引起薄膜光学带隙下降。

The CF , CF_2 and CF_3 bonds decrease and the C-C bonds increase with increasing gas flow ratio , which leads to enhancement of π - π ~ absorption and reduction of optical gap .

我们的研究表明，Mg元素掺杂CdSe可以调节系统的光学带隙，使其光响应范围基本覆盖整个可见光区；Ag和In掺杂CdSe可以改变其导电类型，提高载流子浓度。

It is shown that the band gap of Mg doped CdSe can be modulated to cover almost the whole visible light region . For the Ag and In doped CdSe systems , the type of conduction can be changed , and the concentration of charge carrier can be raised .

以乙二胺作为耦合剂和稳定剂，通过溶胶-凝胶法，系统研究了退火气氛、退火温度对CZTS薄膜的相结构、形貌和光学带隙的影响。

Using ethylenediamine as a coupling and stabilizer agent , the impact of annealing atmosphere and temperature on sol-gel derived CZTS phase structure , morphology , and optical band gap have been investigated systematically .

本文主要研究了立方氮化硼（c-BN）薄膜的制备、成核机理、光学带隙以及氮化硼（BN）/Sin-p和BN/Sip-p薄膜异质结的电学性质。

This paper focuses on the preparation of cubic boron nitride ( c-BN ) thin films , nucleation mechanism of c-BN thin films , their optical gaps , and the electrical characteristics of boron nitride ( BN ) / Si heterojunctions ( include n-p and p-p heterojunctions ) .

在较高的微波功率条件下，沉积薄膜的光学带隙减小。

At higher microwave power , the optical energy gap decreases .

研究结果表明：1.微晶硅薄膜的光学带隙随着沉积气压的升高而单调下降。

The values of optical band gap decrease with increasing gas pressure .

氟化非晶碳膜的光学带隙和伏安特性

The optical gap and I-V characteristic of a-C ∶ F thin film

近红外光学带隙硅三维光子晶体的制备

Preparation of the Three-dimensional Silicon Photonic Crystal with a Photonic Band Gap Near Infrared

这样的原子键结构变化导致薄膜光学带隙增大（从3.06eV增加到了3.33eV）。

Such atomic bonding configuration variation was found to induce enlarged optical band gap .

纳米硅带尾态能量分布及其光学带隙

The energy distribution of band tail states of NC Si and its optical gap