化合物半导体材料

氮化铝（AlN）是一类重要的宽带隙Ⅲ－Ⅴ族化合物半导体材料，其晶体结构为纤锌矿型，同ZnO的晶体结构相同。

AlN is an important ⅲ-ⅴ compound semiconductor material with wide band-gap , which has wurtzite structure too .

碳化硅（SiC）是一种具有较大的电子饱和漂移速度、高临界击穿电场和高热导率的宽禁带化合物半导体材料。

Silicon carbides ( SiC ) are a kind of wide bandgap compound semiconductor material which have greater saturated electron drift velocity , higher critical breakdown electric field and higher thermal conductivity .

氧化锌（ZnO）是一种重要的宽禁带Ⅱ&Ⅵ族化合物半导体材料，具有优良的物理及化学性能。

Zinc oxide ( ZnO ) is an important II-VI wide band gap semiconductor with WZ crystal structure .

AlN是一种重要的Ⅲ-Ⅴ族化合物半导体材料。

AIN material is one of important ⅲ - ⅴ compound semiconductors .

国内MOCVD化合物半导体材料的新进展

Recent Development of Compound Semiconducting Materials of MOCVD at Home

MOCVD化合物半导体材料及其应用

MOCVD Compound Semiconductor Materials and their Applications in China

基于GaAs和InP系列化合物半导体材料的光波导器件是高速光开关研究的主要方向。

Nowadays , the waveguide devices based on GaAs and InP materials have become the main research direction of high speed switches .

硒化镉（CdSe）是直接跃迁宽禁带隙的Ⅱ&Ⅵ族化合物半导体材料。

Cadmium Selenide ( CdSe ) is a ⅱ & ⅵ compound semiconductor with direct transition , wide-band-gap .

InP是一种优良的Ⅲ-Ⅴ族化合物半导体材料，它广泛应用于微波毫米波器件领域。

InP is an excellent III-V compound semiconductor material and is widely used as the material for the microwave and millimeter-wave devices .

III-V族化合物半导体材料的高能重离子辐照效应

High Energy Heavy Ion Irradiation Effect in III V Compound Semiconductors

ZnO为Ⅱ-Ⅵ族化合物半导体材料，具有压电、热电、气敏、光电导等多种性能，在许多领域都有广泛的应用。

Zinc oxide ( ZnO ) is II-VI compound semiconductor . It can be used in many areas due to its piezoelectric , thermoelectric , gas sensing and photoconducting multiple properties .

SiC半导体材料是继第一代半导体材料Si和第二代化合物半导体材料之后发展起来的第三代宽带隙（WBS）半导体材料，宽禁带半导体是指禁带宽度大于2.6eV的半导体材料。

Following the development of the first generation Si semiconductor and the second generation compound semiconductor , SiC semiconductor material is the third generation wide band semiconductor material .

由于ZnO是一种Ⅱ-Ⅵ族宽禁带化合物半导体材料而且具有较大的激子束缚能，所以在科学研究和技术应用领域很受关注。

ZnO is an excellent ⅱ - ⅵ wide band gap compound semiconductor materials and has a large exciton binding energy , commonly used in the field of scientific research and technology .

氧化锌（znO）是一种直接宽带隙化合物半导体材料，对其进行过渡元素的掺杂可以明显的降低它的电阻率从而拓宽了氧化锌的应用领域。

Zinc oxide ( ZnO ) is a direct wide-bandgap compound semiconductor materials . ZnO doped by transition metal can significantly lower the resistivity , which can bring a wide practical application in semiconductor devices .

以GaN为代表的第三代宽禁带化合物半导体材料因其显著优点是目前世界上最先进的半导体材料，广泛应用于蓝、绿光发光器件领域。

As a representative of the third generation semiconductor material , GaN is the most advanced semiconductor materials all over the world , widely used in blue , green light shining field .

SiC是唯一可以氧化生长成SiO2的化合物半导体材料，这使得它可以运用Si平面工艺条件进行SiC器件的制造，特别制作MOS器件方面。

It is the only one compound semiconductor whose native oxide is SiO2 . Therefore , the SiC devices can be manufactured using the technology of the silicon processing , for example MOS devices .

ZnO是一种直接带隙宽禁带Ⅱ-Ⅵ族化合物半导体材料，其晶体结构、晶格常数和禁带宽度都与GaN非常接近。

ZnO is a ⅱ - ⅵ compound semiconductor with a direct wide band gap of 3.3 eV . Its crystal structure , lattice parameter and band gap are quite close to those of GaN .

ZnO是一种Ⅱ-Ⅵ族化合物半导体材料，属于六方纤锌矿结构，（002）晶面的表面自由能最低，因而ZnO通常具有[0001]取向性生长。

Zinc oxide ( ZnO ) is a novel II-VI compound semiconductor with a hexagonal wurtzite structure . It grows usually along the [ 0001 ] orientation due to its lower surface free energy for the ( 002 ) plane .

GaAs是发展最快的第二代化合物半导体材料，具有高迁移率、直接跃迁型能带结构等优点，适合制造高频、高速器件和电路。

GaAs is a compound semiconductor which has the best development in semiconductor materials , which is used to fabricate the devices and circuits of high frequency and speed because of its high mobility ratio and direct transition energy band structure .

利用Ⅲ-Ⅴ族化合物半导体材料砷化镓（GaAs）和磷化铟（InP）及其掺杂材料制作的光导开关具有很好的时间响应及高功率输出特性。

ⅲ - ⅴ compound semiconductors , such as Gallium arsenide ( GaAs ), Indium phosphide ( InP ) and their doped materials , are suitable to make high speed and high power PCSS with picosecond ( ps ) time response .

碳化硅（SiC）半导体材料是自第一代元素半导体材料（Si）和第二代化合物半导体材料（GaAs、GaP、InP等）之后发展起来的第三代宽带隙半导体材料。

Silicon Carbide ( SiC ) is one of the third generation of semiconductor materials following the progress of the first generation of element semiconductors ( such as Si ) and the second generation of compound semiconductors ( such as GaAs , GaP and InP ) .

GaN是大功率和高温半导体器件的理想化合物半导体材料，具有宽禁带、高击穿电压、异质结沟道中高峰值电子漂移速度和高薄层电子浓度。

The group ⅲ - ⅴ nitride materials are ideal for high power and high temperature devices with their large energy band-gap , high breakdown voltage , high peak electron velocity and high electron sheet density in channels when used in a heterostructure .

砷化镓（GaAs）是一种重要的化合物半导体材料，具有电子迁移率高、直接跃迁型能带结构等优点，适合于制造高频、高速、耐高温、抗辐射和发光器件。

Gallium Arsenide ( GaAs ) is important compound semiconductor material . It has high electron transfer rate and direct transition energy band structure . GaAs is fit to be made into high frequency , high speed , endure heat , anti - radiation and luminescence apparatus .

Luxtera的设计消除了使用昂贵的III-V化合物半导体材料（如砷化镓和磷化铟）的必要。

Luxtera 's design eliminates the need to use expensive group III – V compounds , such as gallium arsenide ( GaAs ) and indium phosphate ( InP ), in the semiconductors .

黄铁矿结构的FeS2（pyrite）是一种具有氯化钠结构的窄带隙化合物半导体材料，具有优良的电学和光学性能。可以被用来制备太阳能电池光吸收层材料，光化学电池电极材料以及热电材料等。

FeS2 ( pyrite ) is a kind of narrow gap compound semiconductor with NaCl structure . It can be used as the absorption materials in solar cells , the electrode in the photochemistry battery from its excellent electric and optic properties .

铜铟硒（CIS）或铜铟镓硒（CIGS）和硫化镉（CdS）是制造薄膜太阳能电池的非常优良的化合物半导体材料，CIGS太阳能电池有非常高的光电转化效率，目前已经达到19.9%。

Copper indium diselenide ( CIS ) or copper indium gallium diselenide ( CIGS ) and cadmium sulfide ( CdS ) are both promising semiconductor compounds for fabricating thin film solar cells . CIGS solar cells have reached a very high photo-electric conversion efficiency of 19.9 % .

氧化锌（ZnO）是一种重要的直接宽带隙化合物半导体材料，具有优良的压电、热电、光电特性，其禁带宽度为3.37eV，室温下激子束缚能高达60meV，远高于其它半导体材料。

Zinc oxide ( ZnO ) is an important direct wide band gap ( 3.37eV ) semiconductor with interesting piezoelectric , optoelectronic , and pyroelectric properties . The exciton binding energy of ZnO at room temperature is 60 meV , much lager than those of other semiconductors .

通过对典型Ⅳ-Ⅵ族化合物半导体材料PbTe红外介电函数的计算，讨论了能带非抛物性和载流子浓度在多能谷体系中的分布效应对红外介电函数的影响。

By means of detailed calculation of the infrared die-lectric function of the typical ⅳ - ⅵ compound semiconductor PbTe , we have discus-sed for the influence of the non-parabolic property of energy band and the free carrier distribution among the four valleys on the infrared dielectric function .

砷化镓及相关化合物半导体材料的研究进展和应用前景

Development and Future Prospects of GaAs and the Related Compound Semiconductor Materials

异质外延在化合物半导体材料和器件的制备中起着至关重要的作用。

Heteroepitaxy plays a fundamental role in compound semiconductor materials and devices .