半导体禁带宽度

Ⅲ-Ⅴ族宽禁带含氮三元混晶半导体禁带宽度的计算

The Band Gap Calculation of Wide-Gap Ternary Compound Nitride Semiconductors in Group ⅲ - ⅴ

当能量大于或等于半导体禁带宽度的光子照射在光催化剂表面上时就会产生电子-空穴对的分离，这是光催化反应的最初的基本步骤。

The initial step of the photocatalytic process consists of the generation of electron-hole pair upon irradiation of a photon whose energy is equal to or higher than that of the band gap of a photocatalyst .

半导体材料禁带宽度测试装置的研制

Development of Energy Gap Measuring Device for Semiconductor Materials

重掺杂使半导体材料禁带宽度变窄，从而改变量子阱中能级的位置。

The heavily doping will narrow the forbidden gap and change the energy level in quantum wells .

根据光电导方法，研制了DB－1型半导体材料禁带宽度测试装置。

Based on the photoconductive method the Energy Gap Measuring Device for Semiconductor Material-Type DB-1 has been developed .

硅是微电子学中应用最为广泛的材料，但由于硅是间接带隙的半导体，禁带宽度窄，发光效率很低，因而限制了它在光电子领域中的应用。

Silicon is most widely used in the study of micro-electronic materials , but because silicon is an indirect band gap semiconductor , a narrow band gap , low luminescence efficiency , and thus restricting its application in the field of optoelectronics .

SiC半导体由于具有禁带宽度大、临界击穿电场和热导率高等特点，在高温、高压、大功率器件领域具有广阔的应用前景。

Silicon carbide ( SiC ) is a promising candidate for applications in high temperature , high voltage , high power electronic devices because of its outstanding properties such as wide band gap , high critical electric field and high thermal conductivity .

GaN半导体材料具有禁带宽度大、电子饱和速度高、导热性能好等优点，在高温、大功率、微波器件领域拥有很大发展潜力。

Gallium nitride material has superior physical properties , such as wide bandgap , high saturation electron drift velocity and high thermal conductivity . It has great potential for application in high temperature , high power and microwaves fields .

Cu2O是一种p型半导体，其禁带宽度仅为2.17eV，能被太阳光中的可见光激发，因此能充分利用清洁能源太阳能。

Cu2O is a p-type semiconductor with a band gap of 2.17 eV , it can be activated by the visible light , thus , the clean energy solar energy can be effectively utilized .

氧化锌晶体是直接带隙宽禁带半导体材料（禁带宽度3.37ev），现已发现具有室温下受激发射特性，有可能实现室温下半导体紫外发光。

ZnO crystal is material of the direct gap semiconductor ( the width of forbidden band : 3.37ev ) . The excited emission in ZnO crystal at room temperature has been found , so the ultraviolet luminescence in ZnO semiconductor can be acquired at room temperature .

氧化锌作为新一代化合物半导体，其禁带宽度对应紫外光的波长。

As a new generation of compound semiconductor , zinc oxide has widegap .

GaN作为第三代半导体材料，具有禁带宽度大、击穿场强高、热导率高以及电子饱和速度高等特点，广泛应用于高温、高频和大功率等领域。

As the third generation semiconductor material , GaN takes advantages form bigger forbidden band width , higher breakdown voltage , higher thermal conductivity and higher electronic saturation speed which are suitable for high temperature power applications .

II-VI族半导体具有大的禁带宽度、较大的激子束缚能和强的室温激子效应，一向被认为是制备室温激子非线性器件和短波长发光器件的重要侯选材料之一。

II-VI semiconductors , possessing broad band gap , large exciton binding energy at room temperature , is rationally expected to be promising candidates for nonlinear devices and short wavelength laser .

第三代半导体材料GaN具有禁带宽度大、电子饱和漂移速率高、介电常数小和击穿场强高等特点，非常适用于制作高频、高速、高功率、抗辐射、高集成度的电子器件和电路。

As a third-generation semiconductor , GaN having excellent characteristics such as wide band gap , high electron saturation drift velocity , small dielectric constant and high breakdown field , is very suitable for making high-frequency , high-speed , high power , anti-radiation , high integration electronic devices and circuits .

氮化铝（AlN）是一种宽禁带半导体材料，具有禁带宽度大、电子迁移率高、硬度高、导热率高、耐高温、压电系数大、表面声速高、化学性质稳定等一系列优点。

Aluminum nitride ( AlN ) is a wide bandgap semiconductor , which has some excellent properties such as large bandgap , high electron mobility , high hardness , high thermal conductivity , resistant to high-temperature , high piezoelectric coefficient , high surface acoustic velocity and high chemical stability .

作为候选材料之一的ZnO为纤锌矿六方结构直接带隙半导体，室温下禁带宽度为3.37eV，激子结合能为60meV，室温下不易被热激发，具备了室温下发射短波长光的必要条件。

As one of the candidate materials , ZnO with the hexagonal wurtzite structure is hardly hot excited and possesses the necessary condition for short-wavelength emission at room temperature due to its large band gap ( 3.37 eV ) and large exciton binding energy ( 60 meV ) .

氧化亚铜作为一种重要的金属氧化物半导体材料，其禁带宽度为2.17eV，可以很好地吸收可见光，使得它在光电化学分解水领域具有极其重要的研究价值。

Cuprous oxide is of extremely important research value in the photoelectric chemical decomposition of water as metal-oxide semiconductor material with a proper band gap ( 2.17eV ) for absorption of visible light .

硫化镉是Ⅱ-Ⅵ族化合物半导体材料，其禁带宽度约为2.42eV，是一种典型的光电材料。

CdS belongs to the II-VI group semiconductor material , and the band gap was 2.42 eV , Being a typically photoelectron material .

氧化镍是具有典型的3d电子结构的氧化物半导体，是一种p型半导体材料，禁带宽度是在3.6～4.0eV之间。

NiO is a p-type semiconductor material with typical 3d electron structure oxide . Its band gap is between 3.6-4.0 eV .

氧化锌（ZnO）和硫化锌（ZnS）是典型的Ⅱ-Ⅵ族半导体材料，均为直接带隙半导体，室温下禁带宽度分别为3.37和3.6eV。

Zinc oxide ( ZnO ) and zinc sulphide ( ZnS ) are typical II-VI group semiconductors , and both of them are direct-gap semiconductors with the forbidden gap energy of 3.37 and 3.6 eV at room temperature .

本实验用惠斯通（Wheatstone）电桥测量了半导体电阻R随温度的变化规律，同时确定了本征半导体材料的禁带宽度△E。

The regular change of semiconductor resistance under different temperatures is obtained in measuring its resistance in a Wheatstone bridge circuit . The " band space " △ E of semiconductor material is determined .

SiC半导体材料是继第一代半导体材料Si和第二代化合物半导体材料之后发展起来的第三代宽带隙（WBS）半导体材料，宽禁带半导体是指禁带宽度大于2.6eV的半导体材料。

Following the development of the first generation Si semiconductor and the second generation compound semiconductor , SiC semiconductor material is the third generation wide band semiconductor material .