压阻系数

但由于扩散硅的压阻系数是温度的函数，使得压阻式压力传感器存在零点温度漂移和灵敏度温度漂移，这是影响压力检测系统测量精度的主要原因。

The piezoresistive coefficient of silicon is a function of temperature and so the thermal zero drift and thermal sensitivity drift occur in piezoresistive pressure sensor , that is the main reason of causing measurement accuracy reducing .

在原有版图的基础上做了一系列优化：去掉了空气桥工艺，改变了栅电极引出位置，并考虑了压阻系数与晶向的关系。

A series of optimization based on the original structure are made : to remove the air bridge technology , to change the location of gate electrode leads , and to consider the relationship of piezoresistive coefficient and crystal .

N型硅压阻系数π（11）与π（12）之间关系的理论推导

Theoretical Derivation of Relationship between Piezoresistance Coefficient π _ ( 11 ) and π _ ( 12 ) of N-silicon

多晶硅薄膜压阻系数的理论研究

Theoretical Research on Piezoresistive Coefficients of Polysilicon Films

压阻系数约为15。

The gauge factor was about 15 .

采用全空间统计平均的方法，计算得到了晶向完全随机的多晶硅横向平均晶粒压阻系数；

Meanwhile , the average grain piezoresistive coefficients of polysilicon with random orientations have also been calculated by using random statistical method .

不但灵敏度比较高，而且能实现压阻系数的片上温度自补偿。

This gyro is proved to have high sensitivity and low temperature coefficient of sensitivity ( TCS ) by a piezoresistance on chip self-compensation feedback .

对传感器在30～70GPa间进行了初步的标定，标定曲线近似为一条直线，压阻系数为0.0201±0.0002GPa~（-1）。

The gauges were calibrated from 30 to 70 GPa . The initial calibration curve was almost a straight line with piezoresistance coefficient of 0.0201 + 0.0002 GPa-1 . The sensors had high sensitivity .

对不同长度圆管进行了数值计算，结果表明无论是压差或摩阻系数，都与管长之间存在着近似的线性律。

The numerical results for the pipes with different lengths show that there exists linear law between the pipe length and either the pressure difference or friction coefficient .

依据单晶硅和多晶硅的压阻效应，并考虑压阻系数随温度、掺杂浓度的影响，可建立压敏电阻的参数化组件模型；

Based on the piezoresistive effect in single crystal and polycrystalline silicon , the parameterized behavioral model of piezoresistor is established .

研究了半导体的压阻效应、压阻张量、压阻系数，进而对MEMS悬臂梁进行了受力弯曲分析，分析压敏电阻的设计位置。

Piezoresistive effect of semiconductor piezoresistive tensor and the piezoresistive coefficient are studied . MEMS cantilever bending force is analyzed , and the location of the varistor is design .