场效应管

HDγ-125型场效应管逆变式恒电位仪的研制

Development of HDY-125 MOSFET Inverter Constant Potential Instruments

基于功率场效应管的脉冲电磁场发生装置

A Pulsed Magnetic Field Generation Device based on Power MOSFET

微型封装P波段低噪声场效应管放大器

Mini - packed P-band low noise FET amplifier

C波段双栅砷化镓场效应管三倍频器的研制

Development of C-band dual-gate GaAs MESFET frequency tripler

DNA场效应管传感器的分子设计

A Molecular Design of DNA Field Effect Transistor Transducer

氮化N沟MOS场效应管的界面陷阱特性

Properties of Si SiO 2 Interface Traps In Nitrided n MOSFETs

X波段砷化镓场效应管介质振荡器

X-Band GaAs FET Dielectric Oscillator

7GHz频段单栅GaAs场效应管微波混频器

The single-gate GaAs MESFET microwave mixers at 7 GHz band

场效应管RC移相振荡器的非线性振荡理论

Nonlinear Oscillation Theory in FET RC Phase Oscillator

应用遗传算法提取GaAs场效应管小信号模型参数

GaAs FET Small-Signal Model Extraction Using Genetic Algorithm

它是以金属钯作为栅极，由PdSio＿2Si构成的钯栅场效应管。

It has grid of metal Palladium and palladium field effect tube composed of Pd-Sio_2-Si .

亚微米MOS场效应管的完全解析二维模型

Completely Analytical Two Dimensional Model of Submicron MOS Field Effect Transistor

本文基于离子敏场效应管的工作原理，设计了以DSP为核心单元的青霉素浓度测试系统。

This paper presents a measuring system of the concentration of penicillin with DSP based on the theory of ISFET .

介绍由于X射线荧光检测器探头的前置放大电路场效应管损坏而导致X射线光管不能打开的故障原因及故障排除方法。

The trouble of disable opening X-ray tube in ARL9400 X-ray fluorescence spectrograph caused by destroied field effect transistor was discussed .

本文对GaAs微波场效应管工作寿命试验中的防振荡问题作了进一步研究。

The measure of preventing microwave GaAs FET from oscillating during operation life test has been studied .

增强型场效应管NH4~+敏尿素传感器的实验研究

Experimental research of NH_4 ~ + sensitive urea sensor with reinforcement ISFET

MOS场效应管的新的电流公式

Advanced Current Characteristics of MOS Field Effect Transistors

系统研究了磷掺杂CdS纳米带底栅场效应管的电学和光电学性能。

The electrical and optoelectronic performances of back-gate CdS : P NR FETs have been studied systematically .

小尺寸MOS场效应管弱反型饱和特性

Saturation characteristics of small geometry mosfet 's

CMOS离子敏场效应管SPICE模型

SPICE model for CMOS ISFET

MOS场效应管压力微传感器

MOS field effect transistor pressure microsensor

基于这种背景，本文将开展针对射频应用的0.13μMCMOS工艺射频MOS场效应管模型的研究。

This thesis will carry out the investigation on RF application MOSFET modeling in 0.13 μ m CMOS technology .

全砷化镓双栅场效应管的UHF频道选择器

An AII-GaAs Dual-Gate FET UHF Channel Selector

深埋条形双异质结AlGaAs半导体激光器与MES场效应管驱动器单片集成光电子电路

Monolithic Integrated Optoelectronic Circuits Including Strip Buried-Heterostructure AlGaAs Laser and MES - FET Driver

目前国际上0.13μMCMOS工艺射频MOS场效应管模型，特别是针对射频应用的模型，还不完善。

Also , RF MOSFET modeling in 0.13 μ m CMOS technology is not mature , especially the models for RF application .

一种功率场效应管的高频驱动电路单片微机场效应管高频TIG焊机研究

A High Frequency Driver for Power MOSFET Devlopment of computerised high frequency current TIG welder with single chip and MOSFET

电路采用源极耦合场效应管逻辑（SCFL），与静态CMOS逻辑相比具有更高的速度。

SCFL circuits are used because of the higher speed compared to static CMOS .

此类直接型数字平板探测仪由薄膜晶体场效应管（TFT）阵列与光传导器组成。

The FPD is composed by Thin Film Transistors ( TFT ) arrays and photo-conductive sensors .

介绍了一种用于GaAs半导体探测器，以场效应管和集成运放为主要器件的低噪声的电荷灵敏前置放大器的设计。

The low noise charge sensitive preamplifier which designed by JFET and integrated circuit operational amplifier for GaAs semiconductor detector is described in this paper .

叙述了由SG3525A型PWM控制的全桥功率场效应管变换器的主电路；

The SG3525A type PWM control main circuit of the full-bridge power MosFETS converter were discussed ;