正胶

基于一般正胶光刻工艺的剥离工艺，所需胶膜的厚度要大大超过剥离薄膜的厚度。

The lift-off technic based on traditional photolithography using positive photoresist , which requests the thickness of photoresist must be more than that of thin film .

正胶铬板图象反转技术的研究

Investigation of The Image Reversal Technique of Positive Chrome Plate

反手正胶的弹打和提拉速度快且下栽。

The bomb hit the backhand is plastic and pulling speed and crashed .

最后介绍了新型的正胶剥离技术在实际工作中的应用。

Finally , the applications of the new technique in UFPA were introduced .

但直拍正胶快攻型打法和削攻型打法人才匮乏；

But pen-hold pips-out quick attack and counterattack during chops type play who is deficient ;

采用合适的工作条件，提出以正交试验法安排厚胶光刻实验，对所得到的实验结果进行极差分析，优化各工艺参数，得到适用于正胶AZ4620的光刻工艺参数组合。

The orthogonal test method is used to arrange thick film photolithography experiments on the appropriate working conditions .

在样机上用光刻胶正胶进行了曝光试验，其结果与理论分析的结论一致。

The exposure experiments on the system showed a good agreement of the experimental results and the theoretical derivation and analysis .

基于光刻胶正胶曝光显影过程的理论模型，用梯度折射率介质光线追迹的方法进行了由于局部溶解速率不同而造成的显影过程中胶面面形随时间变化过程的计算。

Based on the theoretical process model for positive photoresist , ray tracing algorithm is used to calculate the time evolution of surface profiles produced by a locally dependent surface etching phenomenon .

采用直流电镀结合正胶光刻工艺制备了Fe21Ni79/Cu/Fe21Ni79三明治薄膜，并在0.1~40MHz范围内研究了它的纵向巨磁阻抗效应特性。

Fe21Ni79 / Cu / Fe21Ni79 sandwiched films were prepared by DC-electroplating incorporated with positive photoresist lithography technique on glass substrate . The longitudinal giant magneto-impedance ( GMI ) was measured in the frequency range of 0.1 ~ 40MHz .