漏电

对静电实验中漏电现象的探讨

Discussing the Phenomenon of the Leakage of Electricity in Electrostatic Experiment

试论漏电保护与预防电气引发的火灾

Discussion on the Protection of Leakage of Electricity and Prevention of Electrical Fire

采用Matlab所提供的一维离散小波分析工具软件，对所采集的漏电数据信号实现小波变换分析。

To use the software wavelet 1-D in Matlab toolbox these acquired data were analyzed .

基于DSP矿用低压电网新型选择性漏电保护装置的研究

Research and application of the selective leakage protective system of low voltage distribution networks for mines based on DSP

基于PIC单片机的智能漏电火灾报警系统的设计

Design of Intelligent Leakage Current Fire Alarming System Based on PIC Microcontroller

肌肉中的HH模型的漏电导g1Hopf分岔分析

Analysis of Hopf Bifurcation Caused by Leakage Conductance g in the H-H Model in Muscles

SL系列延时型漏电断路器故障原因分析

Trouble Reason Analysis for SL Series Delayed Electrical Leakage Circuit Breaker

利用数模混合信号CMOS工艺实现了一种新型漏电开关保护器芯片。

A new type of electrical leakage protection chip implemented in the digital analog mixed-signal CMOS process is represented .

Hg（1-x）CdxTe光电二极管反向漏电机制分析

Analysis of reverse leakage current mechanisms in hg_ ( 1-x ) cd_xte photodiodes

阻燃耐漏电高性能PBT材料的制备与性能研究

Studies on the Preparation and Properties of Flame-retardant Reinforced PBT with High Comparative Tracking Index

提出了一种新型漏电保护芯片，使用0.6μMCMOS工艺、数模混合信号设计。

A novel type of leakage current protector chip , implemented in the mixed-signal 0.6 μ m CMOS process , is presented .

PCL数据采集卡在漏电保护器可靠性试验装置中的应用

Application of PCL Data Acquisition Card in Reliability Test Device for Residual Current Operated Protecter

扫描SQUID显微镜分辨率的改进及其在漏电电流无损检测中的应用研究

Study on Spatial Resolution of Scanning SQUID Microscope and Its Application on Non-destructive Test of Creepage Current

提出了一种智能化漏电保护芯片。电路基于0.6μMCMOS工艺、采用数模混合信号设计，并用全定制的方法实现。

A smart leakage-current protector IC is presented , which is implemented in a mixed-signal 0.6 μ m CMOS process and using full-custom design approach .

对一款真实SoC中浮点IP核的改造实验表明，在不降低性能的前提下，可以平均降低62.2%的动态功耗，同时理论上平均降低70.9%的漏电功耗。

The experimental results on some IP cores in a real SoC show an average of 62.2 % dynamic power reduction and 70.9 % leakage power reduction without performance degradation .

随着工艺技术的不断进步和电路集成度的不断提高，CMOS电路的静态漏电功耗已经开始成为纳米级设计领域所面临的最严峻的挑战之一。

With the development of integration magnitude , Along with the improvements in the technology , leakage power reduction of CMOS circuit became the top challenge in nanometer level .

SOI（绝缘体上硅）器件在总剂量辐照下的主要性能退化是由于SOI器件的背栅阈值电压漂移引起的背沟道漏电。

The primary performance degradation of SOI device in the total dose irradiation is the back-channel leakage current caused by gate threshold voltage shift .

辐射敏感PMOS管的研制具有判断功能漏电保护器的研究

Research on Radioactive Sensitive PMOS Device

在应用中，BST薄膜的漏电流是要重点考虑的电性能参数之一，因此对BST薄膜漏电特性的研究尤为重要。

As a crucial electric parameter in application , leakage current characteristics of BST thin film has attracted widely research interest .

低漏电高增益InGaAs/InPSAGM雪崩光电二极管

Low Dark Current High Gain InGaAs / Inp SAGM APD

当单核CPU基本只有40%的性能提升时，它却增加了结构的复杂性，同时更带来了头痛的漏电问题。

When the improvement in performance for a single-core CPU is only 40 percent , it has increased the complexity of the structure . Which is also brought out is the headache leakage problem .

对于中性点不接地的矿井低压电网，其对地绝缘电阻r，电容C和漏电电阻R，是决定零序电压的3个重要参数。

For an ungrounded neutral low voltage power system in mine , its insulance ( r ) , capacitance ( C ) and leakage resistance ( R ) to the ground are three important parameters in determining the zero sequence voltage .

换句话说，所使用温度的氢退火不但没有起到任何钝化效果，反而使PN结的漏电变得更加严重。

In other words , the hydrogen annealing used does not play any passivation role on the poly-Si thin film solar cells , but make the leakage at the PN junctions become worse .

指出引起SIT互调失真和增益压缩的主要原因是跨导Gm的非线性，其次是栅源电容C（gs）的非线性变化和漏电导Gd的非线性变化的作用。

It is pointed out that the intermodulation distortion and gain compression of SIT are mainly caused by the nonlinearity of transconductance G_m , then by those of gate-source capacitance C_ ( gs ) and drain conductance G_d in order .

CPLD实现对零序有功功率与给定功率进行比较以决定漏电保护电路的是否启动，并实现语音报警和与上位机串行通讯的功能。

CPLD is used to compare zero-sequence active component power with the given power to determine whether drive current leakage measurement circuit , and to fulfill voice alert and the serial communication with computer .

对NMOS管采用环型栅结构代替传统的双边器件结构，消除了辐射感生边缘寄生晶体管漏电效应；

The use of edgeless NMOS transistors in place of2-edgeless transistors eliminates the excessive radiation-induced edge leakage in many CMOS parts after irradiation .

此外，通过引入DVS技术将TLB存储单元中的漏电功耗减少90%以上。

In addition , a DVS technology is used reducing the leakage power in the TLB 's memory cells by 90 % .

这些分子在以Au、Ag、Cu和Al为源/漏电极材料的OFET器件中呈现出了双极性的传输特性，部分分子显示了很高的迁移率。

When using Au , Ag , Cu and Al as source / drain electrodes , all the new materials exhibit ambipolar transport properties and some of them show very high charge carrier mobility .

远端计算机管理控制中心通过Modem与前端的漏电监测单元组成信息网络系统，基于电话网环境实现下位终端和管理控制中心的数据通信，实现对农村线路漏电情况的远程监测。

The remote control center and the leakage current-detecting unit are linked by Modem as an information network . Applying data communication between terminals and control center , remote monitor of leakage current for rural power network is realized .

在医学上EMT抗噪性能好，对病人无电离辐射作用，无漏电，具有更好的无创性，并且造价低。

The EMT have the features of strong ability of anti-noise , no action of ionizing radiation , no leakage current , non-invasive and low cost on medically .