激光放大器
- 网络laser amplifier;Tapered Amplifier;FP-SLA
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高功率激光放大器B积分值的选取
Selection of the value of B integal for high power laser amplifier
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湍流下运转的新型CWCO2单横模高功率激光放大器
New High Power TEM_ ( 00 ) CW CO_2 Laser Amplifier Operated by Turbulence Flow
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高功率激光放大器中光束的成丝和B积分
Filamentation of Intense Laser Beam in High Power Laser and the B Integral
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Nd∶YAG单程激光放大器的设计方法
Design methods for single pass Nd ∶ YAG laser amplifiers
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低重复率的Ti:Al2O3飞秒激光放大器研究
Study on a compact femtosecond ti : al_2o_3 amplifier at low repetition rate
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IL型半导体激光放大器的噪声
Noise in an injection locked semiconductor laser amplifier
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高功率LD泵浦Nd:glass薄片激光放大器的研究
Study of High Power LD Pump Nd : Glass Thin Disk Laser Amplifier
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大口径LD泵浦的激光放大器热沉积特性
Heat deposition in large-aperture diode-end-pumped laser amplifier
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F-P半导体激光放大器弱信号机制下的增益特性研究
Study on gain characteristic of Fabry-Perot type semiconductor laser amplifier under weak signal regime
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同时结合工程应用的特性,将研究结果直接运用到LD泵浦的高增益激光放大器系统结构设计中,并取得了良好的效果。
In engineering application , good effect was obtained by applying the results to the LD pumped high-gain amplification system .
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Wiggler强度递减的自由电子激光放大器分析
Analysis of FEL Amplifier with Amplitude Tapered Wiggler Magnet
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本文报导了用实验方法研究Fabry-Perot型GaAs-GaAlASDH半导体激光放大器的结果。
A Fabry-Perot type GaAs-GaAlAs DH Semiconductor Laser Amplifier is investigated experimentally .
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利用直接耦合的激光器放大器对,观察了弱信号机制下Fabry-Perot的半导体激光放大器的光放大。
Amplification in Fabry-Perot type semiconductor laser amplifiers has been observed with a directly coupled laser-amplifier pair .
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放电泵浦KrF激光放大器的高电压脉冲发生器
A high voltage pulse generator for exciting a discharge pumped KrF laser amplifier
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介质参数对KrF激光放大器的影响
Influence of medium parameter on amplification of KrF laser
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电子束激励KrF激光放大器稳定运行的重要技术问题
Important technological problems with stable operation of electron beam pumped KrF excimer laser amplifier
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进行了单段钕玻璃激光放大器(SSA)的计算模拟。
A computational simulation of the single segment Nd ∶ glass amplifier ( SSA ) has been made .
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描述了一台用于泵浦KrF激光放大器的可重复频率运行的高电压脉冲发生器。
A high voltage pulse generator capable of repetitive operation for exciting a KrF laser amplifier is described .
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理论上建立了激光放大器的计算模型,分析了激光放大器的能量转换机理;并应用Matlab对普通条件及小信号条件下的放大增益特性进行了数值模拟计算。
Theoretically , the calculation model of the laser amplifier was built and the energy conversion of the laser amplifier was analyzed . The gain characteristic at conventional and small signal condition was simulated by Matlab software .
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CVL横向泵浦的染料激光放大器中泵浦光纵向分布对效率的影响
Effect of longitudinal distribution of pumping beam on conversion efficiency in dye amplifier transversely pumped by CVL
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在关于自聚焦的线性不稳定理论的基础上,Glass等人在高功率激光放大器中引入了分裂积分(B积分)作为一个重要参数。
Based on the theory by BecnaJlOB [ 1 ] with regard to linearity instability of self-focusing , Glass [ 2 ] and others introduced as an important parameter the breakup integal ( B integal ) in the design of high power laser amplifier .
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利用铜蒸气激光器泵浦碰撞锁模染料激光放大器,获得2.4μJ,70fs低色散光脉冲,脉冲重复率为5kHz。
Low-dispersion pulses with a duration of 70 fs and energies of up 2 . 4 μ J were obtained from an amplifier pumped by a copper vapor laser at 5 kHz pulse repetition-rate .
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本文分析了半导体激光放大器处于增益饱和状态下的自相位调制(SPM)效应,以及SPM效应对传输脉冲波形、相位及频谱的影响。
In this pager , the self-phase modulation effect in gain saturated semiconductor optical amplifier and its affect on the shape , phase and spectrum of transmission pulse are analyzed .
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一种测量GaAs-GaAlAs行波激光放大器增益特性的实验方法
A new experimental method for measuring gain properties of GaAs GaAlAs traveling-wave laser amplifier
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采用传输矩阵方法(TMM)对具有不同腔面反射率的半导体激光放大器的特性进行了分析。
Properties of semiconductor laser amplifier with different reflectivity are analyzed by means of transferring matrix method ( TMM ) .
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文章推导了多层平板波导结构的半导体激光放大器(SLA)端面反射率的计算方法,为优化设计SLA端面增透膜参数提供了工具。
A method for calculating facet reflectivity of semiconductor laser amplifiers ( SLA ) with multilayer slab waveguide structure is derived , which provides a tool for optimizing antireflection coating parameters on SLA facets .
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介绍一种实时监控行波半导体激光放大器(TW-SLA)抗反膜(AR)超低剩余反射率的新方法。
A new method of monitoring the in-situ extremely low residual reflectivity of antireflection ( AR ) coating of travelling-wave semiconductor laser amplifier ( TW-SLA ) is presented .
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实验中对LDA及Nd:YLF棒进行了有效的温度控制,同时采取了精确的延时措施,提高了激光放大器的转换效率和稳定性。
The temperatures of laser diode array and Nd : YLF rod are controlled effectively and the accurate delay is adopted . Such measures increase the energy conversion efficiency and stability of amplifier .
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直径为320mm的大孔径高功率碘原子激光放大器
A high power atomic iodine amplifier with an aperture of 320 mm
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采用三台外腔光栅反馈半导体激光器(ECDL)、四台注入锁定从激光器和一台半导体激光放大器组成激光系统。
The laser diode system is composed of three external cavity diode lasers and four injection diode lasers and a tapered amplifier .