电子束曝光

低能电子束曝光（入射束能小于几keV）由于具有许多有益的特征性质近些年来受到人们的特别关注，它的许多问题尚待研究。

In recent years , the more interests have been focused on the low-energy EBL due to its many characteristics , and there are many problems to be studied in this field .

电子束曝光中由于电子在抗蚀剂中的散射引起的邻近效应是决定曝光分辨率的关键因素。

In EBL , a key factor to dominate the exposure resolution is the proximity effect produced by the scattering of energetic electrons in resist .

基于FPGA的电子束曝光机工件台控制器设计

E-beam Lithography Stage Controller Design Based on FPGA

LaB6阴极在电子束曝光机中的应用研究

Applicaton of lab_6 cathode in electron beam lithography systems

MonteCarlo方法模拟低能电子束曝光电子散射轨迹

Monte Carlo Simulation of Electron Scattering Trajectories in Low-Energy Electron Beam Lithography

电子束曝光高斯分布束斑的MonteCarlo模拟

Monte Carlo Simulation of Gauss ? distribution beam spot in Electron Beam Lithography

MonteCarlo方法研究低能电子束曝光沉积能分布规律

Studies of energy dissipation distribution in low-energy electron beam lithography by Monte Carlo method

介绍了nm级电子束曝光机激光定位精密工件台系统的结构组成、各部分技术措施及总体性能指标。

The configuration , technology solutions and all performances of laser stage system for E-beam lithography machine were described .

本文介绍了应用于亚微米电子束曝光机电源系统中的FIR滤波器。

The FIR filter used in the power supply of submicron E beam lithography system is described .

采用MonteCarlo模拟和解析法两种方法对电子束曝光剂量与刻蚀深度间的关系进行深入地研究。

The relationship between EB exposure dose and etching depth is studied thoroughly by Monte Carlo simulation and analytic method .

该方法利用电子束曝光技术具有高分辨率的特点和X射线曝光技术具有高效率及大高宽比等特点。

The method has utilized high resolution of electron beam lithography and X-ray lithography with high efficiency and the merit of fabricating high aspect ratio structures .

本文介绍了DY－5型亚微米电子束曝光机的主要技术性能：最细特征线宽0.4μm；

The technical specifications of Type DY-5 submicron electron beam exposure machine are introduced .

电子束曝光用精密X-Y工件台系统

A precision X-Y stage system for electron beam lithography

介绍了电子束曝光技术、EUV光刻技术和X射线光刻技术的进展；

Some progress on top-down nano-fabrication , such as electron beam lithography , X-ray lithography and EUV lithography were introduced .

系统介绍了亚微米电子束曝光机激光工件台控制系统的结构组成以及工件台自校正PID定位控制系统的设计。

The constitution of the control system for laser positioning stage used in sub micron E beam exposure machine and the design of PID positioning and control system for automatic correction of the stage are presented in the paper .

DJ-2型可变矩形电子束曝光机电子光学设计

Electron optical column for variable rectangular-shaped beam lithography system DJ-2

本文介绍了应用现行的PSPICEV5.0软件和CAD优化技术，对亚微米电子束曝光机高速偏放电路的VMOSFET参数进行处理。

The analysis and synthesis on the parameters of VMOSFET in high speed deflection circuit of submicron EB exposure machine by PSPICE V5 . 0 program and CAD optimum technique are introduced .

EBES-40A型电子束曝光机的软件开发

Software development for ebes-40 a electron beam lithography system

利用反差经验公式精确地确定电子束曝光剂量与刻蚀深度间的关系，克服了实验方法的繁琐性。通过MonteCarlo模拟得到吸收能量密度来计算反差的方法，也同样避免了大量的实验任务。

A new way to determinate the relationship between EB exposure dose and etching depth accurately is proposed by experiential formula of contrast and the contrast is calculated by absorbing energy density gained by Monte Carlo simulation , which get over the complexity of experimental ways .

高速数据传送系统（HSDTS），相当于可变矩形电子束曝光机控制曝光用的专用计算机。

HSDTS is a special purpose computer that is used in the Variable-Shaped electron beam lithography system .

本文介绍了为新型电子束曝光机研制的高精度30kV高压稳压电源。

A high-precision regulated power supply for a new type electron beam lithography system with 30 kV high voltage is recommended .

采用电子束曝光，结合胶的灰化技术，得到了线宽为50nm的胶图形，并用RIE刻蚀五层介质的方法，得到了栅长仅为50nm的自对准假栅结构。

Using e-beam and resist ashing , resist patterns with 50 nm line-width are obtained , and a self-aligned replaced gate structure with 50 nm gate-length is fabricated by etching 5 layers of dielectrics with RIE .

采用电子束曝光和反应离子刻蚀的工艺，将GaAs／AlGaAs量子阱外延材料制成量子点阵，其光荧光谱显示出蓝移，并且蓝移量随着量子点直径尺寸的减少而增大。

GaAs / AlGaAs quantum dots were made by Electron Beam Lithography ( EBL ) and Reactive Ion Etching ( RIE ) on GaAs / AlGaAs quantum well wafers . Their photoluminescence shows blue shift , the amount of blue shift increases with the decrease of quantum dot size .

介绍了将商用透射电镜JEM-2000EX改造为高能电子束曝光系统的研制工作，在现阶段研制工作的基础上进行了曝光实验。

The research work about modifying a commercial transmission electron microscope ( JEM-2000EX ) into a lithography system is introduced , and the experiments are carried out on this system .

以SDS-3电子束曝光机为基础，用折板结构静电偏转替代直板结构静电偏转，探讨了电子束曝光机折板静电偏转场的电子轨迹与电位分布应满足的要求。

Based on the SDS-3 E-beam lithography machine , the electrostatic deflection of the folded plate structure was used instead of the electrostatic deflection of the plate . The requirements that the electron trajectories and potential distribution must realize for electrostatic deflection of folded plate sturcture were discussed .

电子束曝光机偏转系统及可动物镜分析

Deflecting System and Moving Objective Lens in Electron Beam Exposure Machine

电子束曝光系统扫描场的畸变校正

Distortion correction method of the scan field for e-beam exposure system

DB&5型光栅扫描电子束曝光机真空系统

Vacuum system of model DB-5 raster scanning electron beam exposure machine

电子束曝光技术的显著优点就是分辨率高，灵活性强，容易获得亚微米分辨率的精细图形。

High-resolution and good flexibility are remarkable advantages of this technology .

亚微米电子束曝光机镜筒光路与结构

Columm Optics And Mechanism of a Submicron Electron Beam Lithography System