界面态
- 网络interface state;interface trap
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MOS结构热载流子注入感生界面态及其退火特性
Hot-carrier injection induced interface states in MOS structure and their annealing characteristics
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实验结果说明辐照感生界面态在MOS电容的平带电压漂移中起重要作用。
The experimental results indicate that radiation induced interface states play an important role in flatband voltage shift of MOS capacitors .
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固体C(70)/GaAs接触的界面态及整流特性
Interface states and rectification of solid C _ ( 70 ) / GaAs contacts
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但在100℃温度场中,两种偏置条件都有利于p沟器件氧化物陷阱电荷和界面态的退火。
Both two kinds of conditions are helpful to annealing of oxide traps and interface traps for p-MOS .
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Si/SiO2界面态的俘获截面及态密度的能量分布
Capture Cross Sections and Energy Distribution of Si / SiO_2 Interface States
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PIN型非晶硅太阳电池界面态对电池性能的影响
The influence of interface state on the characters of PIN-type amorphous silicon solar cells
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MOS系统界面态密度分布的一种直接显示法
A Direct Display Method for Measuring MOS Interface State Density Distribution
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研究了SiC表面氢化降低界面态密度的机理。
The mechanism of lowering the density of interface states due to hydrogenating SiC surface was studied .
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SiO2-InPMIS结构的界面态和体深能级的研究
Study of interface states and bulk trap levels in the sio_2-inp MIS structure
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~(60)CO-γ辐照感生Si/SiO2慢界面态及其对高频C-V测试的影响
 ̄( 60 ) Co - γ Radiation-Induced Slow Traps in MOS Structures and Their Influence on High Frequency C-V Measurement
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MOS器件界面态与陷阱电荷分离方法研究
Oxide-trap and Interface-trap Charge Separation Analysis Techniques on MOSFET
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应用Gray&Brown法研究MOS电容辐射感生界面态密度
A Study of Radiation Induced Interface State in MOS Capacitors by Gray-Brown Method
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硅棚MOS结构的辐射感生界面态
Radiation-Induced Interface State of Silicon Gate MOS Structure
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MOS结构中的两类慢界面态
Two Species of Slow Traps in MOS Structures
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MOS结构Si/SiO2界面态的电荷泵测量
New Charge Pumping Technique of Measuring Si / SiO_2 Interface States in MOS Devices
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界面态电荷对n沟6H-SiCMOSFET场效应迁移率的影响
Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET
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MOS界面态电荷瞬态谱方法
MOS Interface State Charge Transient Spectroscopy
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模型以氢钝化SiC表面悬挂键,降低SiC表面的界面态密度,消除了费米能级钉扎,获得理想的SiC表面。
The density of surface states is lowered to unpin the Fermi level because the hydrogen passivated dangling bonds of the surface .
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采用二维有限元数值分析的方法,开发了用于反向偏置p-n结分析的模拟软件,可以模拟与MOS型功率器件反向耐压有关的终端浅结场环、场板、SiO2介质及界面态。
By using two-dimensional finite-element numerical analysis , we develop a computer simulation program used for terminal field calculation of reverse biased p-n junctions .
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强脉冲X射线辐照在Si-SiO2中感生的界面态及退火消除
Radiation-induced interface states of Si-SiO_2 by intense pulse X-ray and their annealing
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HEMT及其界面态效应的二维数值模拟
Two-Dimensional Numerical Simulation of HEMT and Interface States Effect on HEMT
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证实了GaN肖特基势垒光敏器件的辐照失效与界面态有关,而不是由GaN体材料中的缺陷导致的。
The reason that the irradiation induced failure of GaN devices was due to the damage of Au / GaN Schottky interface .
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从理论上计算出GaAs/Si异质结在Si的(211)面上界面态密度最小,故GaAs在Si(211)面上生长晶格失配度较小。
The paper in the theory have been calculated GaAs / Si heterostructures epitaxy on ( 211 ) Si crystal plane , which density is smaller than other .
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界面态对AlGaAs/GaAsHEMT直流输出特性的影响
Influence of Interface States on Characteristics of AlGaAs / GaAs HEMT Direct Current Output
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最后在n型SiC不同光波段的C-V光照实验研究中,我们发现不同频率光波的光照的得出的C-V曲线界面态台阶不相同,该结果说明利用不同单色光波可以得到界面态分布的信息。
Finally , different wavelengths of light-wave were applied to the photo-excited C-V , which indicated that the information of interface states could be obtained .
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并针对SiC的电学和物理特性,通过对SiMOS电容测量方法进行修正,测量了SiCMOS界面态密度和边界陷阱密度。
Interface-state density and border trap density for SiC MOS devices are measured by modifying measurement methods for Si MOS devices and considering electrical and physical properties of SiC .
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在异质结样品中观察到了载流子从Mg(0.12)Zn(0.88)O盖层向ZnO层注入的过程,这归结为样品中存在着与界面态相关的局域激子。
We observed a process of the carrier injection from Mg_ ( 0.12 ) Zn_ ( 0.88 ) O capping layer to ZnO layer which attributed to the existent of interface potential barrier .
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MOS电离辐照感生Si-SiO2界面态及其密度的能级分布
Y-ray irradiation-induced Si-SiO_2 interfacial state and its energy level distribution of its density in MOS structure
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应用DLTS技术研究磷处理对Si&SiO2界面态的影响
A study of the effect of the phosphorus soaking on si-sio_2 interface state by DLTS
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表现为在同样辐照偏置下注F1器件比未注F1器件的阈电压漂移小,辐照后退火期间的界面态、氧化物电荷变化稳定。
And , reliability of the F + implanted devices was verified by smooth changes of both interface state charge and oxide state charge during the annealing .