分子束外延技术

最后介绍了分子束外延技术在光电子器件方面应用的最新进展。

The recent progress in the applications of the MBE techniques to optoelectronic devices is finally presented .

分子束外延技术的发展和应用

Development and application of MBE technique

Si局域分子束外延技术

Si Local Molecular Beam Epitaxy

低温分子束外延技术制备的Mn掺杂GaAs是目前研究比较成熟的稀释磁性半导体体系。

Mn doped GaAs prepared by low temperature molecular beam epitaxy method is one of the most matured diluted ferromagnetic semiconductor systems .

本论文采用原子层沉积技术、分子束外延技术、磁控溅射等方法制备了ZnO基紫外发光器件。

In this thesis , we fabricated ZnO-based UV light emitting devices by atom layer deposition , molecular beam epitaxy and radio-frequence magnetic sputtering .

以分子束外延技术在SIMOX衬底上生长Si／Ge（0.5）Si（0.5）应变层超晶格。

Si / Ge_ ( 0.5 ) Si_ ( 0.5 ) Strained-layer superlattices are grown by molecular beam epitaxy on SIMOX substrates .

用X射线反射方法研究了分子束外延技术生长的Si中Ge薄层异质结构的Ge原子分布特性。

Synchrotron radiation X-ray reflection method is used to study the depth distribution of Ge atoms in Si crystals caused by surface segregation during the MBE growth .

用分子束外延技术在半绝缘GaAs衬底上生长制备了不同结构的AlAs/GaAs/InGaAs两垒一阱RTD单管。

AlAs / GaAs / InGaAs double barrier-single well structures are grown on semi-insulating GaAs substrates by molecular beam epitaxy .

本文采用分子束外延技术制备了高质量的GaAs基InAs自组织量子点材料。

In this thesis , high quality GaAs-based InAs self-organized QDs were grown by molecular-beam epitaxy ( MBE ) .

我们用显微拉曼、卢瑟福背散射谱、X射线散射和非对称摇摆等实验手段研究了在10-2到10-5帕氧气压下用激光分子束外延技术生长的BaTiO3-x薄膜的结构动力学特性。

Structure dynamics of strongly reduced epitaxial barium titanate ( BaTiO_ ( 3-x )) thin films were investigated by Micro-Raman scattering technique , Rutherford backscattering spectrometry , X-ray diffraction , and asymmetric rocking curves .

利用分子束外延技术生长出了GaAlAs／GaAs折射率渐变分别限制单量子阱结构材料。

GaAlAs / GaAs material with gradient refraction index separate confinement ( GRIN-SCH ) single quantum well structure has been grown by MBE .

用分子束外延技术结合硅平面工艺研制成了GexSi（1-x）/Si异质结远红外探测器。

A Ge_xSi_ ( 1-x ) / Si heterojunction infrared detecton was fabricated by molecular beam epitaxy ( MBE ) combined with Si planar technology .

采用分子束外延技术（MBE）在MgO（001）基板上沉积了氧化铬薄膜，并利用x射线衍射（XRD）和x射线反射谱（XRR）对薄膜的晶体结构进行了表征。

Chromium oxide films grown by molecular beam epitaxy on MgO ( 001 ) substrates were characterized by x_ray diffraction ( XRD ) and x_ray reflectivity ( XRR ) measurements .

在（111）InSb和（100）GaAs衬底上，用分子束外延技术生长了InSb和InAsxSb（1-x）外延层。

Epitaxial layers of InSb and InAs_xSb_ ( 1-x ) on ( 111 ) InSb and ( 100 ) GaAs substrate have been grown by MBE technique .

用射频等离子体辅助分子束外延技术（RF-MBE）在c面蓝宝石衬底上外延了高质量的GaN膜以及AlN/GaN超晶格结构极化感应二维电子气材料。

High-quality GaN films and AlN / GaN polarization-induced two-dimensional electron gas ( 2DEG ) materials are grown on ( 0001 ) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy ( RF-MBE ) .

本文主要在超高真空条件下利用分子束外延技术完成C60分子在Si（111）-7×7的生长，研究了分子与衬底之间的相互作用以及其随温度的变化情况。

In this thesis , the epitaxial growth of C60 on Si ( 111 ) - 7 × 7 surface in ultrahigh vacuum system and the changing interaction between molecules and substrate with temperature were studied .

低温分子束外延技术的应用，使高浓度掺杂的III-V族稀磁半导体得以成功制备，与现代半导体器件兼容。

A novel material-III-V diluted magnetic semiconductors , has been successfully prepared by low temperature molecular beam epitaxy , compatible with contemporary semiconductor apparatus .

利用激光分子束外延技术在LaAlO3（100）单晶基片表面生长SrTiO3（STO）薄膜。

SrTiO_ ( 3 )( STO ) thin films were fabricated on LaAlO_ ( 3 ) ( 100 ) single crystal substrates by the laser molecular beam epitaxy method .

为实现既能单独应用于紫外探测和红外探测，又能同时紫外/红外双波段探测的目的，我们设计在GaN衬底上采用分子束外延技术（MBE）生长GaAs薄膜。

To achieve UV detection or IR detection , while at the same time UV / IR dual-band detection , we design the growth of GaAs epitaxial films on the GaN substrate by molecular beam epitaxy ( MBE ) .

利用低温分子束外延技术（LT-MBE）制备的GaMnAs是一种新型的半磁半导体材料（DMS），它兼有磁性材料和半导体化合物的特点。

GaMnAs is a kind of new Semimagnetic Semiconductor material prepared by Low-temperature molecular beam epitaxy , which combines the functionality of semiconductors with that of ferromagnetic materials .

采用分子束外延技术，在GaAs衬底上生长GaAs，AlAs和AlGaAs时，实现RHEED图像和RHEED强度振荡的实时监测已被证明是一种有效工具。

The use of reflection high-energy electron diffraction ( RHEED ) intensity oscillations has proven to be a powerful tool to understand growth mechanisms of GaAs , AlAs and AlGaAs in molecular beam epitaxy ( MBE ) .

而近些年来随着薄膜外延沉积技术特别是脉冲激光沉积（PLD）和分子束外延技术的发展，人们已经能够在原子级尺度上制备高质量的氧化物异质界面或超薄膜。

With recent advances in deposition techniques particularly pulsed-laser deposition ( PLD ) and molecular-beam epitaxy ( MBE ), people now can synthesis these materials on an atomic-scale level and make high quality of oxide heterostructures and ultrathin films .

本文开展的主要工作和结果有：（1）研究了自组织量子点的生长方法，利用分子束外延技术（MBE）生长出高质量的InAs自组织量子点。

Main works and results include : ( 1 ) . Growth method of self-organized quantum dots was studied . High quality InAs self-organized quantum dots were grown by MBE ( molecular beam epitaxy ) technique .

用分子束外延技术按样定制半导体微观结构

Fabrication of custom-designed Semiconductor Microstructures by molecular beam epitaxy

全固源分子束外延技术及其在光电子器件制作中的应用

All Solid - Source Molecule Beam Epitaxy Technique and its Applications in Fabrication of Optoelectronic Devices

利用分子束外延技术研制出了高质量InGsAs/GaAs应变量子阱材料及量子阱激光器。

Using solid state molecular beam epitaxy technology we have grown the high quality InGaAs / GaAs strained quantum well materials and fabricated quantum well lasers .

超高真空有机分子束外延技术是一种多用途的高技术，可以生长有机、无机、有机/无机混和的薄膜结构。这种薄膜结构是未来光学和电子器件有希望应用的新一类工程材料。

Ultrahigh vacuum organic molecular beam epitaxy has been shown to be a highly versatile technique for the growth of a wide range of organic and hybrid organic / inorganic thin film structures which comprise a promising new class of engineering materials for optical and electronic device applications .