硫化镉

合成和发现硫化镉的亚稳新相。

A new sub-phase of CdS has been fabricated .

硫化镉钠米微粒在聚合物网络中的组装

Assembly of CdS Nanoparticles in Polymer Networks

冲击下c轴硫化镉单晶的相变特性

Phase Transition Behavior of c-Axis Cadmium Sulfide Single Crystal Under Shock Loading

通过X射线衍射光谱分析，H菌株对镉离子的转化产物为硫化镉。

Furthermore , the analysis of X-ray diffraction diagram indicated that cadmium ion was transformed into cadmium sulfides by H strain .

水热法制备硫化镉（CdS）纳米颗粒和纳米棒

Preparation of CdS nanoparticles and nanorods with hydrothermal method

硫化镉薄膜的XPS研究

X-ray Photoelectron Spectroscopy of Cadmium Sulfide Thin Films

用上述C8TTF的衍生物修饰了硫化镉纳米粒子，这种修饰是通过直接的S架桥得到的，这些纳米粒子由于长链的疏水性进一步组装成稳定的球状结构。

CdS nanoparticles are modified with the first TTF derivative . The modified CdS particles further assemble to a sphere that is a secondary structure of the colloid .

紫外可见分光光度法检测硫化镉（CdS）薄膜性质研究

The Research on Testing the Properties of Cadmium Sulfide Films by the UV Visible Spectrophotometer Method

作为一种典型的光电半导体材料，硫化镉（CdS）一维纳米材料的合成近年来受到人们的广泛关注。

As a typical photoelectric semiconductor , the fabrication of CdS one-dimensional nanostructure has attracted extensive attention recently .

溶剂热方法制备了纳米硫化镉作为半导体光催化剂，光化学沉积Pt制得Pt／CdS催化剂。

CdS semiconductor photocatalyst was synthesized by a solvent thermal process . Platinum ( Pt ) was loaded on the CdS by photodeposition .

硫化镉纳米微晶掺杂Na2O-B2O3-SiO2系统玻璃的制备及光学性质的研究

Synthesis and Optical Characterization of CdS-doped Microcrystals Na_2O-B_2O_3-SiO_ 2 Glass

高效簿膜CdTe太阳电池是以硫化镉（CdS）作匹配的异质结太阳电池。

Efficient thin film CdTe solar cells are of the heterojunction type with cadmium sulfide ( CdS ) as the heterojunction partner .

碲化镉（CdTe）和硫化镉（CdS）是制造薄膜太阳能电池的常用半导体材料。

Cadmium telluride ( CdTe ) and cadmium sulfide ( CdS ) are common semiconductor materials used in thin film solar cells .

本文用化学沉积法和电化学沉积法制备太阳能电池用半导体薄膜硫化镉（CdS），对成膜的影响因素进行了测试。

The Paper investigates chemical bath deposition and electrochemical deposition of CdS thin film for solar cells , and the influence factors on film growing .

本文应用LAS200型多功能电子能谱仪对硫化亚铜（CuxS）-硫化镉（CdS）异质结构的表面和深度剖面进行了分析。

In this paper , the LAS-200 model multifunction electron spectrometer was used to analyse the surface and depth profile of thin film Cu_xS-CdS heterostructure .

AFM的实验结果表明，生成的硫化镉纳米粒子排列在DNA网络上，实现了一步合成和组装硫化镉纳米粒子。

AFM results showed that the resulted CdS nanoparticles were directly aligned on the DNA network templates and that the synthesis and assembly of CdS nanoparticles was realized in one step .

硫化镉（CdS）是一种受到广泛应用的宽带隙半导体材料，CdS晶体属于Ⅱ-Ⅵ族化合物中的六方晶系，具有六角纤锌矿结构。

CdS is a wide bandgap semiconductor material which is widespread application . CdS crystals belong to the hexagonal system of ⅱ - ⅵ compounds , with the hexagonal structure .

通过调节DNA和镉离子浓度可以有效地控制硫化镉纳米粒子的尺寸，而且还可以通过改变实验条件使硫化镉纳米粒子沿着DNA链长成一条纳米线。

By adjusting the density of the DNA networks and the concentration of Cd2 + , the size and density of the CdS nanoparticles could be effectively controlled and CdS nanoparticles could grow along the DNA chains into nanowires . 2 .

本工作使用x射线衍射方法，研究太阳能电池材料CdS/MMA，深入研究高分子包埋技术对硫化镉结构的影响，为研制新的包埋技术提供线索和依据。

Using X-ray diffraction method , the structure of solar energy battery material CdS / MMA and the effect of embedment technique on CdS structure have been studied . The result of the study underlies a new embedment technique .

通过透射电镜（TEM）对其进行表征分析，通过实验获得点状、棒状、三角锥状及不同粒径分布硫化镉纳米晶。

The samples prepared were characterized by transmission electron microscopy ( TEM ) . It was found that several different shapes including sphere , rod , triangular cone of CdS nanocrystals with different size distribution were successfully synthesized .

用ESR方法研究了硫化镉超微粒子表面被不同浓度的过剩硫离子S~（2-）改性后对其光诱导电子转移及底物的氧化还原反应进程的影响。

The influence of S2 - ion and its concentration upon the photoinduced electron transfer and red-ox reaction of substrates on the surface of modified CdS colloid have been studied by means of ESR technique .

利用TGA辅助水热法，在低温下（100～160℃）合成了一种硫化镉的亚稳新相一单斜相，经过初步分析得到了它们的晶体学参数。

The monoclinic CdS has been derived by the TGA-assisted hydrothermal process at low temperatures of 100-160 ℃ . Preliminary study of X-ray diffraction ( XRD ) pattern results in their crystallographic parameters .

本论文分为三部分，分别为介孔材料MCM-41与半导体硫化镉的组装，MCM-41与荧光染料曙红的组装以及MCM-41与有机发光配合物铕-苯甲酸-邻菲咯啉的组装。

There are three parts in the dissertation : MCM-41 mesoporous material and semiconductor assembly , MCM-41 and fluorescence dye Eosin Y assembly , and MCM-41 and rare earth complex assembly .

结果表明，控制高聚物的浓度可以制备得到直径在500nm的单分散硫化镉微球；

The results show that uniform CdS spheres with 500 nm can be synthesized with controlled concentration of PVP ;

这可能是由于处理后的CdS纳米粒子形貌和表面电子结构发生了变化，促进了CdS的还原，同时提高了处于激发态的硫化镉的相对数量，从而引起其电化学发光性能显著增强。

The treatment caused the changes in the morphology and surface electronic structure of CdS nanoparticles , which promoted the reduction process of CdS , consequently improved the quantity of the excited states , led to great enhancement in ECL .

采用溶胶－凝胶制备工艺，得到了尺寸为3～6nm的分散在二氧化硅凝胶玻璃中的硫化镉（CdS）半导体微晶，观测了其吸收光谱和荧光光谱，以及三阶非线性光学极化率。

CdS crystallites of 3 ~ 6nm in size dispersed in silica gel glass are obtained through sol-gel process . The quantum size effect and nonlinear optical effect are observed .

制备了聚乙烯吡咯烷酮（PVP）表面修饰的硫化镉（CdS）半导体纳米晶体（量子点），并将其修饰玻碳电极，用于血红蛋白（Hemoglobin，Hb）的电化学行为的研究。

Polyvinylpyrrolidone ( PVP ) - capped CdS semiconductor nanocrystals ( quantum dots , QDs ) were prepared and used to modified glass carbon electrode . The electrochemical behaviors of hemoglobin on PVP / CdS QD modified electrode were studied .

采用脉冲激光沉积（PLD）法在玻璃衬底上，通过调节真空室气压和热处理温度制备铜铟镓硒（CIGS）薄膜吸收层和硫化镉（CdS）薄膜缓冲层。

With adjusting the deposition pressure and heat treatment temperature , The CIGS thin film absorption layer and CdS thin film buffer layer were prepared on glass substrates by pulsed laser deposition ( PLD ), respectively .

用正交试验发考察了各因素对复合催化剂光催化活性的影响的大小，其顺序为：CTAB用量硫化镉掺杂量焙烧温度水热温度水热时间。

The influence factors of photocatalytic activity in the process of catalysts preparation are investigated by orthogonal experiments . The impact factor order is : CTAB amount the intermingled quantity of CdS calcination temperature hydrothermal temperature hydrothermal time .

铜铟硒（CIS）或铜铟镓硒（CIGS）和硫化镉（CdS）是制造薄膜太阳能电池的非常优良的化合物半导体材料，CIGS太阳能电池有非常高的光电转化效率，目前已经达到19.9%。

Copper indium diselenide ( CIS ) or copper indium gallium diselenide ( CIGS ) and cadmium sulfide ( CdS ) are both promising semiconductor compounds for fabricating thin film solar cells . CIGS solar cells have reached a very high photo-electric conversion efficiency of 19.9 % .