等离子化学

报告了利用等离子化学方法除去旧PS版表面感光层和油墨的原理和实验结果。

Principles and experimental result of removal of photosensitive layer and ink film on used PS plate by plasma chemical method are reported .

以乙酰丙酮铝Al（acac）＿3为前驱体用等离子化学气相沉积工艺在玻璃、石英、Si（100）和Ni等底材上沉积出了Al＿2O＿3薄膜。

Thin films of aluminium oxide have been deposited on substrate , such as glass , quartz , Si ( 100 ), nickel by plasma enhanced chemical deposition ( PECVD ), using aluminium acetylacetonate , Al ( acac ) _3 as precursor .

实验中用等离子化学汽相沉积（CVD）技术制备了SiO2分支波导样品，在上述两波长下分别测得分支耦合损耗为008dB和009dB，基本达到了设计指标。

The samples of this type SiO 2 branch waveguide are fabricated by the chemical vapor deposition technology . The measurement on the samples gives the good results of about 0.08 dB and 0.09 dB branching loss at 1.31 μ m and 1.55 μ m wavelengths respectively .

如所期望的那样，O-SiC膜可用作蚀刻和CMP的终止盖层，即需要在集成过程中防止各种等离子化学的辐射。

As expected , the O-SiC film can be used as the cap layers for etch and CMP stops , which means it needs to withstand exposures to various plasma chemistries during the integration process .

采用甚高频等离子化学气相沉积技术（VHF-PECVD）制备了系列p-i-n型微晶硅太阳电池，研究了电池有源层硅烷浓度的变化对电池性能的影响。

Several series of p-i-n solar cells were prepared by very high frequency plasma enhanced chemical vapor deposition ( VHF-PECVD ) technique . The effect of silane concentration of the active layer on the performance of microcrystalline solar cells was investigated .

WC-8.0%Co基底上微波等离子化学气相沉积金刚石膜

Technology of microwave plasma chemical vapor deposition diamond coating upon WC-Co tools

用直流等离子化学气相沉积法在硬质合金上沉积氮化钛膜的研究

Study of tin coatings on carbide alloy by dc-pcvd

水界面电晕放电脱硫脱氮的等离子化学反应研究

Study on plasma chemical reaction of water interface corona discharge desulfurization and denitrogenation

等离子化学强化燃烧技术研究

Study of Plasma Chemistry Strengthen - combustion Technology

具有等离子化学辅助装置燃烧室的放热特性研究

Study of Heat Evolution Characteristics in the Combustor with Plasma - Chemical Auxiliary Device

对等离子化学气相淀积的氮化硅薄膜电特性进行了研究。

The electrical properties of plasma chemical vapor diposition silicon nitride films have been investigated .

新型射频等离子化学气相沉积系统

A New RF & PCVD System

扩散炉型等离子化学蒸汽淀积系统生长氮化硅膜的研究

The growth of silicon nitride films by using a diffusion furnace type plasma-enhanced chemical vapor deposition system

以等离子化学法为代表的节能、环保的合成方法逐渐受到重视；

The synthetic methods with energy-saving and environmental protection such as the plasma assisted polymerization are emphasized .

这是一种在轻合金表面通过微等离子体放电，进行复杂的电化学、等离子化学和热化学过程原位生长氧化物陶瓷膜层的新工艺。

By micro-plasma discharging , through complex electrochemistry , plasma-chemistry and thermal-chemistry processes , ceramic oxide-film is created on the surface .

微弧阶段与局部弧光阶段是在等离子化学、电化学等共同作用下所发生的等离子放电过程。

In the stage of micro-arc oxidation and local arc light , the coating occurs plasma discharge because of plasma chemistry and galvana-chemistry .

等离子化学传输淀积[PCTD]法是我们设计的一种用来制备非晶态硅合金膜的新法。

Plasma chemical transport deposition [ PCTD ] method for preparing amorphous silicon al - loy films is a new method of ours .

本研究中，成功设计了单反应室双沉积法复合镀膜设备，即在同一反应室内同时有两个沉积系统：真空热蒸发与等离子化学气相沉积。

In this work , a one-chamber deposition apparatus , which contributes two deposition system of both Thermal Evaporation Deposition and Plasma Enhanced Chemical Vapor Deposition ( PECVD ), was specially designed .

沉积温度对等离子增强化学气相沉积TiN薄膜内应力的影响

Effect of deposition temperature on the internal stresses in plasma-enhanced chemical vapour-deposited tin thin films

我们检测了等离子灰化化学：O2？

We have examined interactions of plasma ashing chemistries : O 2 ?

等离子增强化学汽相淀积a-SiC：H簿膜的AES研究

AES Study of a-SiC : H Thin Films Formed by Plasma-Enhanced Chemical Vapor Deposition

InP上等离子增强化学汽相淀积SiO2膜及其MIS结构C-V特性研究

Plasma-Enhanced CVD SiO_2 Films on InP and Study of C-V Charateristics in InP-MIS Structures

我们用PECVD（等离子激活化学气相沉积）方法制备SnO2薄膜。

SnO 2 film have been deposited by PECVD ( plasma enhance chemical vapor deposition ) .

本文对用N2－H2混合气体在钛表面进行等离子氮化化学热处理获得的含氮表层进行了硬度、摩擦系数和耐磨损性能研究。

Titanium samples , treated with N2 / H2 gas mixture have been studied for its behaviour in hardness distribution , friction coefficient and sliding wear .

本文探讨了利用微波ECR全方位离子注入技术和等离子增强化学气相沉积技术来制备类金刚石膜。

This paper has discussed preparing Diamond-like Carbon films by means of micro-wave ECR plasma source ion implantation and plasma enhanced chemical vapour deposition .

对直流电弧等离子喷射化学气相沉积法（CVD）制备的自支撑金刚石薄膜，用X射线衍射测量了薄膜宏观织构，用扫描电镜观察了薄膜显微组织。

The texture and microstructure of free-standing diamond films which were synthesized by DC arc plasma jet chemical vapor deposition ( CVD ) were investigated by X-ray diffractometer and scanning electron microscopy ( SEM ) .

采用等离子增强化学气相沉积（PECVD）方法成功的沉积出掺杂（主要是磷、硼）纳米硅薄膜。

B and P doped hydrogenated nanocrystalline silicon films ( nc Si : H ) were generated by plasma enhanced chemical vapor deposition ( PECVD ) .

等离子增强化学气相沉积（PECVD）是低温沉积硅膜的主要方法。

Plasma enhanced chemical vapor deposition ( PECVD ) is one of the matured and simple manipulated among the thin film deposition methods at low temperature .

研究了等离子低温化学气相沉积Si3N4，BN陶瓷膜强化耐热模具钢在不同温度下的摩擦磨损特性。

The friction and wear-resistance under varied temperture was studied for the Si_3N_4 and BN ceramic strengthen refractory steels by plasma chemical vapour deposition at low temperature .

利用等离子增强化学气相沉积（PECVD）方法沉积了氮化硅薄膜，反应气体为氨气和硅烷。

Silicon nitride ( SiN ) thin films were deposited by PECVD ( Plasma Enhanced Chemical Vapour Deposition ) of silane ( SiH4 ) and ammonia ( NH3 ) reactants .