籽晶

湖南含籽晶天然金刚石的同步辐射X射线衍射形貌像研究

Natural Diamond with Seed Crystal from Hunan Province and Its Study with Synchrotron Radiation X-Ray Diffraction Topography

用晶体生长动力学考察了籽晶法气相生长C60单晶体的生长工艺，得出关键在于处理成核与长大两个因素之间的矛盾。

On inspecting the vapour growth techniqe of C60 single crystal using seed crystal , we conclude that it is crucial to balance nucleation and growth properly , based on the theory of crystal growth dynamics .

籽晶辅助化学水浴沉积法制备ZnO纳米棒阵列

Preparation of ZnO Nanorod Arrays by Seed-assisted Chemical Bath Deposition Method

熔盐籽晶法生长Cr~（3+）：LiGaW2O8晶体

Cr ~ ( 3 + ): ligaw_2o_8 crystal grown by the flux method

α-Al2O3籽晶对Al2O3晶型转变及形貌的影响

Effects of α - Al_2O_ 3 Seeds on the Phase Transformation and Microstructure of Alumina

籽晶在湿化学法制备α-Al2O3微粉过程中的作用

Effects of Seed Crystals on Preparation of α - Al_2O_3 Ultrafines by Wet-chemical Methods

离子束溅射ZnO籽晶层上所生长的ZnO纳米结构形成一层致密的膜。

And the ZnO nanostructures on the ion-beam seed layer can even form a dense film .

浸没籽晶法生长La2CaB（10）O（19）单晶的研究

Growth of La_2CaB_ ( 10 ) O_ ( 19 ) Single Crystals by Seed-submerged Growth Technique

在制备过程中以ZnO纳米晶薄膜作为籽晶层，诱导纳米线阵列垂直生长。

In the process , nanowire arrays vertically grew on the silicon substrate via ZnO seed layers inducing .

本文介绍了使用熔盐法、顶部籽晶技术从Na3AlF6助熔剂中生长掺铬红宝石单晶。

In this paper , doped Cr : ruby crystals were grown fromNa_3AlF_6 flux by the top seeded technique .

TiAl籽晶制备及定向全片层组织的研究

TiAl Seed Preparation & Fully Lamellar Structure Control Through Seeding and Directional Solidification

籽晶对碳酸铝铵热分解相变及α-Al2O3纳米粉烧结活性的影响

Effects of seed on phase transformation of AACH upon heating and sintering reactivity of ultrafine α - al_2o_3 powder

用籽晶汽相外延生长CdTe大单晶

Seeded growth of large single-grain CdTe from the vapor phase

ZnO籽晶对ZnO-Bi2O3-TiO2-Sb2O3系陶瓷微观结构和压敏性能的影响

Influence of ZnO seed grains on microstructure and varistor characteristics in ZnO-Bi_2O_3-TiO_2-Sb_2O_3 ceramic system

点籽晶法快速生长中等口径KDP单晶及其性能表征

Rapid Growth and Properties Characterization of Middle Scale KDP Single Crystal

顶部籽晶粉末熔化法制备的超导YBCO单晶畴性能研究

Properties of superconductor YBCO single domain prepared by top seed powder melting process

采用Z45°切籽晶研究大尺寸KDP晶体

Research of Large Size KDP Crystal using Z 45 ° cut Seed

点状籽晶法生长KDP晶体中散射颗粒分布

Scatter Distribution in KDP Crystal Grown by Point Seed Method

籽晶法YBCO超导块材的制备及其磁化性能研究

Fabrication of large YBCO bulk material by seed technique and Study on its magnetization

ADP点状籽晶（100）面的生长

Growth of ADP point-seed crystal ( 100 ) surface

大尺寸Cd（1-x）ZnxTe晶体籽晶垂直布里奇曼法生长技术与性能表征

Growth and Characterization of Large-size Cd_ ( 1-x ) Zn_xTe Single Crystal Using Seeded Vertical Bridgman Method

采用斜型籽晶生长KDP晶体

Growth of KDP Crystal Using Oblique - cut Seeds

通过实验发现：在相同的轴向温度梯度下，SiC晶体平均生长速率随籽晶温度的升高而变大。

The average growth rate of the SiC monocrystal increases with the seed temperature in the same axial temperature gradient according to the experiments .

Y2BaCuO5粒子对顶部籽晶熔融织构YBCO微结构的影响

Influence of y_ 2bacuo_ 5 particles on the microstructure of top-seeded melt textured YBCO BULK

水平无籽晶气相生长的Pb（1-x）SnxTe二极管激光器

Horizontal unseeded vapor growth ( HUVG ) of a Pb_ ( 1-x ) Sn_xTe diode laser

首先通过对籽晶法生长进行理论分析，选择了〈211〉和〈111〉晶向的籽晶的B面为生长晶面，并进行了籽晶加工。

First , the < 211 > and < 111 > orientation seeds with the growth direction on B face are chosen based on theoretical analysis on the seeded growth principles . A Cdo .

本文论述采用籽晶法制备中、低压ZnO压敏电阻器，并利用扫描电子显微镜研究其微观结构。

In this paper , ZnO varistor of intermediate and low voltages prepared by adding crystal seeds was discussed and its microstructrue was investigated by SEM .

比较了档板取不同厚度时SiC粉源升华面和籽晶表面的温度分布。

The influences of different thicknesses of the bar on the temperature distribution at SiC source powder and seed single crystal surfaces are also investigated systematically .

本文报道了对熔盐籽晶法生长的Nb∶KTP晶体的XRD、DTA、同步辐射形貌术的测试结果和晶体的倍频实验。

Experimental results of XRD , DTA , synchrotron radiation topography and SHG of Nb doped KTP crystal have been reported .

但高石墨化度的坩埚，或者坩埚随高温晶体生长过程石墨化度的提高，都将直接导致晶体生长速度减缓，并导致籽晶表面Si相及与其相关的缺陷增多。

High graphitization degree or increase of graphitization degree for crucible during growth process will degrade the growth rate of crystal and augment Si inclusions and defects relative to them .