载流子注入

  • 网络carrier injection;charge injection
载流子注入载流子注入
  1. 表观电荷及其激发的场有机LED的界面与载流子注入

    Apparent Charge and its Field INTERFACE AND CARRIER INJECTION IN ORGANIC LED

  2. 有机LED的界面与载流子注入

    Interface and carrier injection in organic LED

  3. 建立了在单层有机发光二极管中电场强度不太大(E≤104Vcm)的情况下,载流子注入、传输和复合的理论模型。

    A model for carriers injection , transport and recombination in single layer organic light emitting diodes was presented .

  4. 设计了一种基于全内反射原理和光生载流子注入效应的X结全内反射(TIR)全光开关。

    A photo-induced carriers injection effect all optical switch was designed .

  5. MOS结构热载流子注入感生界面态及其退火特性

    Hot-carrier injection induced interface states in MOS structure and their annealing characteristics

  6. 对同一工艺制作的几种不同沟道长度的MOSFET进行了沟道热载流子注入实验。研究了短沟MOS器件的热载流子效应与沟道长度之间的关系。

    Hot carrier effects of MOSFET with different channel lengths have been investigated .

  7. 漏雪崩应力下热载流子注入引起的MOSFET退变特性研究

    ? Study on the Characteristics of Drain Avalanche Stress Induced Hot Carrier Effects in N-Channel Submicron MOSFET 's

  8. 由于新结构可以消除热载流子注入对其可靠性的影响和具有相对高的速度,因此,它是一种具有较大潜力的SOC(片上系统)单元器件。

    As the new architecture with high speed can eliminate the effect of hot-carrier injection , it is a powerful device in SOC .

  9. 载流子注入型MMI光开关设计

    Design of Carrier-injection MMI Optical Switch

  10. 介绍了绝缘体上硅(SOI)材料的制作方法,阐述了SOIMOSFET器件的热载流子注入效应的失效机理。

    The fabrication of SOI ( Silicon-on-insulator ) materials is introduced . The SOI MOSFET hot carrier degradation mechanism is discussed .

  11. 详细介绍了PIN结载流子注入理论,总结和分析了广泛应用的脊型波导横向PIN结构的性质,在此基础上提出了新型的双脊波导横向PIN结构。

    After analyzed the characteristics of transverse PIN junction on rib waveguide , we put forward a new type transverse PIN junction which is formed on double-rib waveguide .

  12. 77KNMOSFET沟道热载流子注入效应

    Effects of Channel Hot - Carrier Injection s in NMOSFET 's at 77K

  13. 因此,研究带相反电荷载流子注入与输运的动力学过程对于理解OLED发光的微观机制是非常有帮助的。

    Therefore , it is helpful to study the injection and transport of electrons and holes to understand the microcosmic mechanism of an OLED performance .

  14. 提高双载流子注入效率的关键是OLED器件的电极的优化。

    Optimizing the performance of electrodes of OLED can be regarded as an important approach on the way of improving the injection efficiency of electrons and holes .

  15. 本文通过衬底热载流子注入技术,研究了热载流子增强的超薄栅氧化层TDDB效应。

    Hot-carrier enhanced TDDB effect of ultra-thin gate oxide is investigated by using substrate hot-carrier injection technique .

  16. 文章从电极材料、结构、处理方法等角度出发,详细介绍了提高有机电致发光(EL)器件载流子注入效率的研究现状。

    Progress in study on carrier injection efficiency of OEL ( Organic Electroluminescence ) devices is presented in this paper , with the emphasis on factors such as electrode materials , structures and treatments .

  17. 通过载流子注入和复合输运模型,分析比较了温度和电场对pin注入型非晶硅碳薄膜发光二极管(a-SiC:HTFLED)发光亮度的影响。

    The paper analyzes the effect of temperature and electric field on luminosity of an amorphous silicon carbon thin film light-emitting diode ( a-SiC : H TFLED ), in terms of the transport model of carrier injection and recombination .

  18. NMOSFET′s在热空穴注入后,热电子随后注入时,会有大的退化量,这可以用中性电子陷阱模型和脉冲应力条件下热载流子注入引起的栅氧化层退化来解释。

    NMOSFET ′ s after hot hole injection followed by hot electron injection produce serious degradation , which can be explained by neutral electron trap model and hot carrier induced gate oxide degradation under pulse stress .

  19. 但已获专利的TMBS结构可消除到漂移区的少数载流子注入,从而最大程度地减少存储的电荷,以及提高转换速度。

    The patented TMBS structure , however , diminishes minority carrier injections to the drift region , minimizing stored charges and improving switching speed .

  20. 首先,利用常规的光电测试方法,对单层电致发光器件ITO/Alq3(90nm)/Al的载流子注入与传输机制进行探讨。

    Firstly , the charge carriers injection and transport mechanism of single-layer device ITO / Alq3 ( 90nm ) / Al was investigated by using the traditionally measurement methods .

  21. 以单层聚对苯乙炔(PPV)薄膜发光二极管为例,研究其薄膜中的电场分布,探讨其电场分布对载流子注入、输运和复合的影响。

    Taking single layer poly ( p phenylene vinylene )( PPV ) thin film light emitting diodes ( LEDs ) as example , the electric field distribution in PPV thin film and its effect on injection , transportation and combination of carriers are investigated .

  22. 采用交流阻抗谱,电容-电压,电容-频率等实验方法,研究了共轭高分子MEH-PPV(poly[2-methoxy,5-(2-ethylhexoxy)-1,4-phenylenevinylene])发光二极管的载流子注入过程。

    The carrier injection process of polymer light-emitting diodes ( PLEDs ) with MEH-PPV ( poly [ 2-methoxy , 5 - ( 2-ethylhexoxy ) - 1,4-phenylene vinylene ] ) as the light-emitting layer , was investigated using impedance spectroscopy , capacitance-voltage ( C-V ) and capacitance-frequency ( C-F ) techniques .

  23. 栅压对有机薄膜场效应晶体管中载流子注入的影响

    The Grid Voltage Effect in Carrier Injection of Organic Field-effect Transistor

  24. 有机发光二极管载流子注入缓冲层研究

    Investigation of carrier injecting layer for organic light emitting diodes

  25. 载流子注入全内反射型GaAs/GaAlAs光波导开关

    Carrier-Injected GaAs / GaAlAs Total Internal Reflection Optical Switch

  26. 多晶硅发射区中的少数载流子注入理论

    Theory about Minority Carrier Injection into Polysilicon Emitter

  27. 蝶形电极结构载流子注入全内反射交叉脊形光波导开关

    Intersectional Rib Optical Waveguide Switch With Bow-tie Electrode on Carriers Injection Total Internal Reflection

  28. 高分子发光二极管载流子注入过程研究

    Carrier injection process of polymer light-emitting diodes

  29. 本论文主要研究了反转结构有机发光二极管中载流子注入的特点与发光性能。

    In this thesis , we have investigated charge injection characteristics and luminescence of inverted OLEDs .

  30. 本文提出了一种新的多晶硅发射区少数载流子注入理论。

    A new theory about minority carrier injection into polysilicon emitter has been proposed in this paper .