镓

接近1050℃的异常高温可用镓温度计测量。

Exceptionally high temperatures , up to1050 ℃ can be measured with gallium thermometers .

铬天青B用作镓的高灵敏光度试剂

Chromazurol B as a highly sensitive photometric reagent for the determination of gallium

黄磷生产电尘浆中镓含量的测定&罗丹明B吸光光度法

Determination of Gallium from Dust Slurry in the Production of Yellow Phosphorous

P（350）萃取色谱分离石墨炉原子吸收光谱法测定化探样品中镓

Determining GA in Geochemical Samples by graphite stove atomic absorption spectroscopy through p_ ( 350 ) extraction chromatographic fractionation

镓-铬蓝黑R络合吸附波的研究及应用

Adsorptive Wave of Complex of Gallium (ⅲ) - Eriochrome Blue Black R and Its Analytical Application

镓铟磷三元化合物中的自由激子和杂质N发光中心的结构位形

The free exciton and the configu-ration of the luminescence centers due to n impurity in ( ga , in ) p

镓在裸Si系和SiO2/Si系掺杂效应

Gallium Doping Effect in Bare Silicon System and SiO_2 / Si System

GaⅢ-5-Br-PADAP-OP体系分光光度法测定锌渣中微量镓

Spectrophotometric determination of trace gallium in zinc slag with Ga ⅲ - 5-Br-PADAP-OP system

回旋加速器制备放射性枸橼酸镓（~（67）Ga）注射液

Cyclotron production of gallium - 67 citrate injection

MTT法评价镓合金的细胞毒性

Evaluation on the cytotoxicity of Gallium alloy by MTT-assay

硅基镓浓度对GaN晶体膜质量的影响

Influence of Ga Concentration in Si Substrates on the Quality of GaN Films

研究了用HCl溶液从铝土矿中浸出镓。

Leaching of Ga from bauxite by HCl solution was studied .

萃取分离EDTA络合滴定法测定镓的研究

Determination of gallium by EDTA complexometric titration after extraction separation

并初步的用于铝土矿中镓的测定，获得与罗丹明B法相符合的结果。

The method can be used for the determination of Gallium in Aluminit , and the result was consistent with that obtained by the Rhodamine B colorimetric method .

采用金属镓层氮化技术在石英衬底上生长多晶GaN氮化镓薄膜研究进展

Growth of Polycrystalline GaN on Silica Substrate via Ga Nitridation PROGRESS OF GALLIUM NITRIDE THIN FILM

通过改变Sn靶的溅射时间与镓靶溅射时间的比例实现了不同浓度的锡掺杂。

The different dopant concentrations were achieved by altering the sputtering time of tin to gallium .

Pt-Ga/Al2O3催化剂的研究Ⅲ.铂镓的相互作用及镓的作用机理

Study of pt-ga / al_2o_3 catalysts ⅲ . the interaction between Pt and GA and the role of GA

本文选用纯度为99.999%的β-Ga2O3粉末为源材料制成陶瓷靶，在低温下采用射频磁控溅射法在Si（111）和石英衬底上直接淀积氧化镓薄膜。

In the paper , β - Ga_2O_3 power of 99.999 % purity was used as the source material for ceramics target .

氮化时间对扩镓硅基GaN晶体膜质量的影响

Influence of nitridation time on the quality of GaN films deposited on Ga-diffused Si ( 111 ) substrates

对鼓风炉（ISP法）或烟化炉水淬渣中回收镓的工艺进行了研究。

Study is made of Ga recovery process from ISP or fuming furnace granulation slag .

新型牙体修复用合金&镓合金的Ames试验

Study on a new kind of dental material-Gallium alloy in Ames test

镓盐对骨质疏松大鼠细胞凋亡和基因组DNA含量及分子量的影响

Osteoporosis model of rats caused by tretinoin acid and experimental study on effects of gallium salts on Apoptosis , contents of DNA , molecular weight of DNA and lipid peroxidation

扩镓硅基GaN晶体膜质量的电镜分析

Electron Microscope Analysis of the Quality of GaN Films Deposited on Ga-diffused Si ( 1 1 1 ) Substrates

镓酸镧基SOFC阳极的制备及性能研究

Synthesis and Properties of Anode for Lanthanum Based SOFC

在理论预期的基础上，采用双靶磁控溅射的方法，制备了掺锡的氧化镓薄膜，即GaxSn（1-x）O薄膜。

Based on the principle anticipation , the Ga_xSn_ ( 1-x ) O films were prepared using the double-targets magnetron sputtering .

光谱分析表明氮气等离子体光源的光谱结构较碘镓灯更适于传统PS版曝光。

The spectrum analysis shows the lamp we developed is more suitable for PS plate exposure than that widely used iodine gallium lamp .

从韶冶ISP炉渣中富集和提取镓的新工艺研究

Study of the New Process for Collecting and Extracting Gallium from the ISP Slag Produced at Shaoguan Smelter

测量了ⅢA族元素镓（Ga）、铟（In）、铊（T1）原于的激光增强电离（LEI）光谱。

The Laser Enhanced Ionization ( IEI ) Spectrometry of IIIA series elements Ga , In , T1 has been measured .

首先通过量子力学的理论计算，得出掺Sn的氧化镓薄膜具有n型导电的性质，替位锡在氧化镓中是施主。

Firstly , The result of the first principle calculation showed that Sn doped Ga_2O_3 films were n-type conductivity , the substituted Sn in Ga_2O_3 is donor .

蓝光和红光发光分别起源丁β-Ga2O3纳米线中氧空位的电子与镓-氧空位对以及N等杂质的空穴之间的复合。

The blue and red light emissions originate from the recombination of an electron on an oxygen vacancy and a hole on a gallium-oxygen vacancy pair and the nitrogen etc dopants , respectively .