阈值电压

GaAsIC阈值电压均匀性的计算机模拟分析

Simulation Analysis of the Uniformity of Threshold Voltage in GaAs IC

低阈值电压高束流Ga离子源的研制

Development of Ga LMIS with High Emission Current and Low Threshold Voltage

GaAs单晶阈值电压自动测试系统的研究

Study on the auto - test system of GaAs threshold voltage

基于MEMS技术的低阈值电压静电型微继电器的设计与研究

Design and Analysis of Electrostatic Microrelay with Low Threshold Voltage in MEMS

低阈值电压RFMEMS开关的力学模型

Mechanical Model of Low Actuation Voltage RF MEMS Switches

基于柱状ZnO薄膜的超低阈值电压压敏电阻

Ultra-Low-Threshold Varistors Based on Columnar ZnO Thin Films

SiC肖特基源漏MOSFET的阈值电压

The threshold voltage of SiC Schottky barrier source / drain MOSFET

基于CMOS阈值电压的基准电路设计

Design of Voltage Reference Based on CMOS Threshold Voltage

GaAs阈值电压均匀性与测试系统的研究

Study of GaAs Threshold Voltage Uniformity and Measurement System

考虑量子效应的短沟道MOSFET二维阈值电压模型

2-D threshold voltage model for short-channel MOSFET with quantum-mechanical effects

短沟道MOS阈值电压物理模型

A Physical Threshold Voltage Model for Short-channel MOSFET Simulation

非对称Halo的异质栅SOIMOSFET阈值电压解析模型

Analytical Model for Threshold Voltage of Hetero-Gate SOI MOSFET with Asymmetric Halo

薄膜SOIMOS器件阈值电压的解析模型分析

Analysis for Analytic Model of the Threshold Voltage of TF SOI MOS Devices

全耗尽SOIMOSFET辐照导致的阈值电压漂移模型

A New Threshold Voltage Shift Model Due to Radiation in Fully-Depleted SOI MOSFET

提出了一种简化的全耗尽SOIMOSFET阈值电压解析模型。

A simplified threshold voltage model of fully depleted SOI MOSFET is proposed .

阈值电压是表征MOS型器件性能的关键参数之一。

The threshold voltage is one of the most crucial parameter of MOS device .

一种自动体偏置多阈值电压高温SOICMOS电路

New auto - bulk - biased multi - threshold SOI CMOS circuit operating at high temperature

短沟道MOSFET阈值电压辐照增强漂移效应

Radiation Enhanced Threshold Drift Effect of Short-channel MOSFET

二维短沟道MOSFET阈值电压分析模型

Analysis of 2-D Short-Channel MOSFET Threshold Voltages Model

自对准双扩散MOS器件的阈值电压分析

An Analysis on the Threshold Voltage of Self - Aligned Double - Diffused MOS Devices

高k栅介质MOSFETs的二维阈值电压模型

2D Threshold-Voltage Model for High-k Gate-Dielectric MOSFETs

深亚微米MOSFET阈值电压模型

Threshold Voltage Model for Deep-Submicrometer MOSFET 's

应变Si沟道nMOSFET阈值电压模型

Threshold voltage model of strained Si channel nMOSFET

阈值电压漂移是电离辐照总剂量效应对MOS器件产生的主要损伤。

Threshold shift of MOS devices is the main damage caused by total dose radiation effect .

根据这个电势分布，得出高k栅介质MOSFET的阈值电压模型，模型中考虑短沟道效应和高k栅介质的边缘场效应。

Based on this distribution , a 2D threshold-voltage model with the fringing-field and short-channel effects is developed for a high-k gate-dielectric MOSFET .

双离子注入短沟道MOSFET的阈值电压解析模型

An Analytical Threshold Voltage Model for Short Channel MOS FET With Boron and Arsenic Implantation

低功耗CMOS工艺中NMOS管阈值电压偏移的研究

A Study on the Threshold Voltage Shift of NMOS Transistors in Low Power CMOS Process

EEPROM中浮栅MOS晶体管阈值电压的研究

Threshold Voltage of Flotox MOSFET in EEPROM

结果表明：由于库仑力的作用，介观LC电路中存在着阈值电压。

Our results indicate that there is a threshold voltage V T in the circuit due to the effect of Coulombian force .

高压功率LDMOS阈值电压温度系数的分析

An analysis of threshold voltage temperature coefficient for high voltage power LDMOS