隧穿

利用电子通过量子系统的传输理论，通过求解量子主方程（QuantumMasterequation），研究了量子点中单电子共振隧穿的性能特征。

Based on the theory of electron transport through a quantum system , by solving quantum master equation , the performance characteristics of a single electron tunnelling through the quantum dot are studied .

Vaidya-Bonner黑洞的隧穿效应及出射修正谱

Tunnelling effect from a Vaidya-Bonner black hole and corresponding emission spectrum correction

对于第一电流类平台区域，我们观察到了两种级联共振隧穿过程。当P＜0.16GPa时，高场畴为Γ－Γ级联共振隧穿过程；

For the first current plateau-like , the two kind of sequential resonant tunneling are observed .

平面型共振隧穿二极管和其组成MOBILE

Planar Resonant Tunneling Diodes and Their MOBILE

SiC肖特基接触的直接隧穿效应

Direct Tunneling Effect in SiC Schottky Contacts

基于共振隧穿压阻薄膜的GaAs基微加速度计研究

A GaAs Micro-Accelerometer Study Based on Resonant Tunneling Diodes

讨论了MOS结构的隧穿机理。

The physical mechanism of tunneling in MOS is discussed firstly .

纳米级MOS器件中电子直接隧穿电流的研究

A Study on Direct Tunneling Currents in Nano - MOS Transistors

Si3N4栅MOS器件的隧穿电流模拟

Simulation of Direct Tunneling Current in MOSFET with Si_3N_4 Gate

室温下Si/Si（1-x）Gex共振隧穿二极管的数值模拟

Numerical Simulation of Si / Si_ ( 1-x ) Ge_x Resonant Tunneling Diode at Room Temperature

隧穿磁强计是一种利用量子力学中隧道效应原理研制的MEMS磁强计。

Tunneling magnetometer is a kind of MEMS magnetometer based on tunnel effect in quantum mechanics .

粗糙界面对超薄栅MOS结构的直接隧穿电流的影响

Effect of Interface Roughness on the Direct Tunneling Current in Ultrathin MOS Structures

研究了共振隧穿结的THz开关特性。

THz switch based on the double barrier RTS is studied .

超薄栅MOS结构恒压应力下的直接隧穿弛豫谱

Direct Tunneling Relaxation Spectroscopy in Ultrathin Gate Oxide MOS Structures Under Constant Pressure Stress

Kerr解的新形式及其隧穿辐射

New form of the Kerr solution and its tunneling radiation

磁隧穿振荡研究GaAs／AlAs双势垒结构中的Γ-X电子态混合

γ x mixing in gaas / alas double barrier structures studied by magneto tunneling oscillations

一个适用于短沟HALO结构MOS器件的直接隧穿栅电流模型

A New Direct Tunneling Gate Current Model for Short Channel MOSFETs with HALO Structure

研究了超薄栅氧MOS器件的直接隧穿（directtunneling，DT）电流模型问题。

Modeling of DT ( direct tunneling ) current in ultra - thin gate oxide n MOSFET 's is researched .

单电子三势垒隧穿结I-V特性研究

The study of I-V characteristics of single-electron triple - barrier tunnel - junction

通过能量守恒方程计算注入到氧化层中的平均电子能量，根据计算出的电子能量可以解释SHE注入和FN隧穿注入的根本不同。

The average electron energy injected into oxide can be calculated by using the energy-conservation equation .

GaNHFET沟道热电子隧穿电流崩塌模型

Hot Electron Tunneling Mechanism of Current Collapse in GaN HFET

可以利用这些参数将共振隧穿二极管的直流模型加入SPICE电路模拟软件器中进行共振隧穿二极管电路设计。

The DC model of the RTD can then be incorporated into a SPICE-like simulator to simulate RTD-based circuits .

微量的Ag掺杂有助于提高样品的自旋相关隧穿磁电阻，使低场磁电阻得到显著增强。

A small amount of Ag addition favors for the magnetoresistance effect related to the spin-dependent tunneling process , and remarkably enhances the low-field magnetoresistance .

低温下的伏安特性（I-V）曲线直接展现了量子共振隧穿峰的存在。

Current-voltage ( I-V ) curves at low temperatures directly exhibit the existence of resonant tunneling peak .

一个新形式Kerr黑洞的纯热辐射谱与隧穿辐射谱的比较研究

The comparison study between the thermal radiation spectrum and the tunneling radiation spectrum in a new-type Kerr black hole

该计算模型还可以用于高介电常数栅介质和多层栅介质MOS器件的直接隧穿电流的计算。

This model could also be used to calculate direct tunneling currents of MOST with high-k gate dielectrics or stacked gate dielectrics .

简单介绍了BEC中的非线性Landau-Zener隧穿效应。

Introduction to the nonlinear Landau-Zener tunneling effect of BEC .

自旋相关光晶格中Bose-Einstein凝聚体的干涉机制与独立凝聚体的隧穿动力学研究

Interference of Bose-Einstein Condensates in a Spin-dependent Optical Lattice and Tunneling Dynamics between Two Independent Bose-Einstein Condensates

利用本文计算隧穿几率的方法，采用费米分布代替常用的玻尔兹曼分布优化了SiC肖特基结的电流输运模型。

The model of SiC schottky contacts is optimized in which Femi distribution is adopted instead of Boltzmann distribution based on the tunneling probabilities calculated with the presented method .

主要研究内容和结论包括：1.研究了共振隧穿结的THz开关特性。

The main contents and conclusions are as following : 1 . THz switch based on the double barrier RTS is studied .