多孔硅

低比表面多孔硅珠DG-6做为气液色谱键合固定相基料

Porous Silica Bead DG-6 with Low Surface Area Used as Matrix of Bonded Phase for Gas Liquid Chromatography

多孔硅球固定化木瓜蛋白酶具有热增活性。

Papain was immobilized on porous silica beads , chitosan and cellulose by cross linking with glutaraldehyde .

基于p型多孔硅的一维光子晶体的微结构分析

Microstructural analysis of 1-D photonic crystal based on p-type porous silicon

p型轻掺多孔硅的发光特性研究

Investigation on optical properties of p-type lightly doped porous silicon

嵌于多孔硅的C（60）的光致发光

Luminescence Spectra of C_ ( 60 ) Molecules Embedded in Porous Si

C（60）偶联多孔硅系统的蓝光发射

Blue Emission from C_ ( 60 ) - coupled Porous Silicon Systems

本文采用传统的电化学阳极腐蚀法制备p型多孔硅。

In this thesis , p-type Porous Silicon was obtained by conventional electrochemical anodization .

多孔硅层晶格畸变的X射线双晶衍射研究

Investigation of lattice deformation of porous silicon films by X-ray double crystal diffraction

掺La（OH）3多孔硅的感湿特性研究

Study on porous silicon doped La ( oh ) _3

发光多孔硅的X射线光电子能谱深度剖析

XPS depth profiling of photoluminescence porous silicon

多孔硅表面的Al2O3钝化处理

Passivation of Al_2O_3 on Porous Silicon Surface

以罗丹明B与亚甲基蓝的降解实验研究了几种不同表面修饰的多孔硅纳米线阵列的光催化性能。

The photocatalytic activity of different surface modified porous silicon nanowire arrays was evaluated by the photodegradation of rhodamine B and methylene blue .

用于MEMS的选择性形成多孔硅技术的研究

Investigation of Selectively Forming Porous Silicon Used in MEMS

用于RF无源器件的氧化多孔硅隔离层技术

OPS insulating techniques for RF passive devices

多孔硅上生长Ge量子点的光学特性

Optical Characterization of Ge Quantum Dots Grown on Porous Silicon by UHV / CVD

多孔硅中的新量子限制态和PL光谱

A Novel Quantum Confined State and PL Spectrum in Porous Silicon

研究了多孔硅（PS）吸附有机溶剂分子后对多孔硅荧光谱的淬灭效应。

The luminescence quenching effect of porous Si caused by adsorbing organic moleculars are investigated .

n型多孔硅的电发光性能及其XPS和LIMA表征

Electroluminescent Property of n Type Porous Si and Its Characterization by XPS and LIMA

本文研究了多孔硅（PS）二极管表面发射电子的特性。

The characteristics of porous silicon ( PS ) diodes as electron surface emitting were investigated .

用扫描电镜（SEM）对厚度不同的多孔硅膜的微结构进行了研究。

The typical microstructures of thick and thin porous silicon films were investigated by scanning electron microscopy ( SEM ) .

采用在阳极化反应时改变电流强度的办法，在高掺杂的P型硅（111）衬底上制备了具有不同多孔度的双层结构多孔硅层。

A double layered porous silicon with different porosity is formed on a heavy doped p type Si ( 111 ) substrate by changing current density during the anodizing .

多孔硅表面氧化钒热敏电阻薄膜的阻温特性系列化厚膜PTC热敏电阻浆料的研制

Study on Series of the Thick-Film PTC Thermal Paste

多孔硅及其在SOI技术中的应用研究

Porous Silicon and Its Application in SOI Technology

多孔硅（Poroussilicon，PS）以其简单的制备方法、复杂的微结构特征和较高的光致发光效率吸引了众多研究者的目光。

Simply prepared method , complex constructure characteristics and higher photoluminescence efficiency in porous silicon have attracted a lot of attention of investigators .

多孔硅的I-V特性及NO2气敏特性研究

Study on the Electrical and NO_2 Gas-Sensing Properties of Porous Silicon

用电化学方法对多孔硅薄膜进行了稀土（Tb，Gd）离子的化学掺杂。

Rare earth ( Tb , Gd ) ions were embedded into porous silicon films by electrochemical method .

结果表明，Tb的掺入显著增强了多孔硅的发光强度，并且发光峰位出现蓝移。

The luminescence intensity of porous silicon after doping Tb is greatly increased . Blue shift of luminescence peak was also observed .

本文采用掺钛化学腐蚀法制备出了发光稳定性和均匀性都较好的多孔硅（PS）。

Porous silicon ( PS ) with good luminescent stability and homogeneity was fabricated by using a novel titanium-doped stain etching approach .

红外吸收实验表明，H2O2处理后多孔硅与氧有关的振动大幅度增强，而各种si&H键则明显减少。

The Fourier-transform infrared ( FTIR ) absorption shows that the localized vibration related to oxygen increases greatly but all kinds of Si-H bonds decrease obviously .

多孔硅银淀积表面RhB染料分子的表面增强Raman散射

Surface Enhanced Raman Spectroscopy of RhB Dye Molecular Adsorbed on Silver Particles Deposited on Porous Silicon