多晶半导体

多晶半导体三碱光电阴极厚度的理论研究

Theoretical Study of Thickness on Polycrystalline Semiconductor Multialkali Photocathode

主要讨论NTC多晶氧化物半导体中晶界对电导的影响。

The dependence of grain boundary on conductivity in NTC polycrystalline oxide semiconductor was discussed .

研究表明，NTC多晶氧化物半导体的电导是由晶粒中载流子的热激发并穿过晶界势垒形成的，电导同时受晶粒和晶界的控制；

Activated carriers in grain pass though boundary , thus form the conductivity of NTC polycrystalline oxide semiconductor .

由此得出的结果，对理解多晶铁电半导体中的PTCR效应是有益的。

The values of the Schottky barrier are evaluated and the results are useful for understanding the PTCR effect in polycrystalline ferroelectric semiconductors .

势垒注入渡越时间二极管振荡器多晶铁电半导体晶界处的肖特基势垒

The Schottky Barrier at Grain Boundaries of Polycrystalline Ferroelectric Semiconductors

多晶铁电半导体晶界处的肖特基势垒肖特基二极管异常击穿特性曲线的研究

The Schottky Barrier at Grain Boundaries of Polycrystalline Ferroelectric Semiconductors Abnormal Breakdown Diagram of the Schottky Barrier Diodes

本文从自发极化对表面态电荷屏蔽的机制出发，讨论多晶铁电半导体晶界处肖特基势垒的特征，并作了数值估算。

The characteristics of the Schottky barrier at grain boundaries in polycrystal-line ferroelectric semiconductors are discussed on the basis of the screening mechanism of spontaneous polarization to the surface state charges .

CdS/CdTe多晶薄膜及其化合物半导体太阳电池的研究

Study on CdS / CdTe Polycrystalline Thin Films and Related Compound Semiconductive Solar Cells

该法的优势在于工艺简单有效、制备面积大、成本低、设备简单、不要求真空系统、沉积温度较低；可生长出稳定性好、质量高的多晶或非晶半导体薄膜。

The method produces good qulity polycrystalline or uncrystalline semiconductor films with simple and effective technology over a large area at a low cost and low temperature , at the same time , the request of vacuum is not high .