电子场

场发射特性的提高主要是由于热处理使阴极表面出现了大量突出并互相间有一定间距的CNTs/CNFs，这种形貌非常有利于电子场发射。

The enhanced field emission of treated CNTs / CNFs cathodes is attributed to the appearance of a large number of exposed CNTs / CNFs caused by heat treatment . This surface morphology is very favorable for the electron field emission .

I-V测试表明用该法得到的碳纳米管薄膜具有良好的电子场致发射性能。

The tests show that the emitter made by the simple method has good properties of electron field emission , following the Fowler-Nordheim behavior .

C基薄膜电子场发射的一般特性及发射模型

Field emission properties and field emission models of C-based films

首次研究了这些四角状ZnO纳米结构的电子场发射特性。

The field emission characteristics of the ZnO nanostructures were studied for the first time .

一维ZnO纳米结构的电子场发射研究

Electron Field-Emission Investigation of One-Dimensional ZnO Nanostructures

研究表明，定向排列良好的顶端直径较小的ZnO纳米线阵列有望成为优良的电子场发射阴极。

Results indicate that well-aligned ZnO nanowires arrays with sharp tips are likely to be good field emission cathode .

由于碳纳米管在力学、电学、化学等方面具有独特的性能，因而在纳米电子学、电子场致发射、传感器、STM探针、吸附、催化及其它领域具有广泛的应用前景。

Because unique performance of carbon nanotube in mechanical and electrical , chemical , etc , it has potentials to widely applied to nanoelectronics , electronic field-emission , sensors , STM probe , adsorption , catalytic and other fields .

在非相对论量子场论框架下，给出电子场和光子场相互作用时整个系统的哈密顿量Htot，研究在强光场中非线性项即A2项的作用。

Under the framework of nonlinear quantum field theory , we show the total Hamiltonian operator H tot for the interaction between an electron field and a photon field , and study the contribution of the nonlinear term A 2 in the strong laser field .

非晶金刚石膜的电子场发射性能研究

Study on the field emission characteristics of the amorphous diamond films

构象电子场理论在协同反应中的应用

Application of the Theory of Conformation-Electron Transition in the Concerted Reactions

氧化物半导体纳米结构制备及其电子场发射特性研究

Fabrication and Electron Field Emission Properties of Oxide Semiconductor Nanostructure

关于电子场的狄拉克方程的研讨

The Research and Discussion on the Dirac Equation for the Electron Field

随薄膜中sp~3键含量的增加，电子场发射性能随着增强。

Field emission is enhanced with increasing sp3 content in a-D films .

本文提出楔形发射体的电子场发射理论并给出计算实例；

He theory of field electron emission of wedge emitters is proposed .

氮化碳薄膜的冷阴极电子场发射特性研究

A Study of Field-emission Characteristics of Carbide Nitride Thin Films

金刚石薄膜电子场发射研究进展

Advanced progress of electron field emission from diamond films

埃尔米特插值多项式双掺杂碳纳米管电子场发射性能的密度泛函研究

Density functional theoretical studies of electron field emission properties of double doped carbon nanotube

楔形发射体的电子场发射理论

Theory of Field Electron Emission of Wedge Emitters

SP~2键含量对非晶金刚石膜电子场发射性能的影响

The Effect of SP ~ 2 Content on Field Emission Character of Amorphous Diamond Film

在此基础上，讨论了碳纳米管在纳米电子学和电子场致发射等方面的应用。

On the basis , its applications to nano-electronics and electron field emission device are analyzed .

氮掺杂及水分子吸附碳纳米管电子场发射第一性原理研究

First-principles study of electron field emission from the carbon nanotube with nitrogen doping and H_2O adsorption

研究了等温退火对非晶金刚石薄膜电子场发射性能的影响。

Effect of annealing on electron field emission properties of the a-D films was also studied .

近年来在电学性质和冷阴极电子场发射方面引起了关注。

Recently , the electronic properties and cold cathode emission properties of CNx films attracted new attention .

发现氢等离子体表面处理可以显著增强非晶金刚石薄膜的电子场发射性能。

After the surface of a-D film was etched by hydrogen plasma , better field emission properties was obtained .

碳掺杂硼氮纳米管电子场发射的第一性原理研究

First principles study of electron field emission from the system of BN nano tuber capped and doped with carbon atom

通过该结构电流电压特性的测量和发光特性的观察研究了金刚石粉末冷阴极的电子场发射性能。

By measuring current voltage characteristics and observing light emission of these diodes , electron emission feature of these diamond powder cold cathodes were investigated .

4f电子晶场势在不同对称性下的表示

The Formulae of Crystal Field Potential for 4f Electron with Different Symmetry

结合实际应用介绍了基于B/S模式的J2EE架构药品电子交易场系统的开发。

In this article , it discusses page cache designing and the application in e-businesss system based on B / S pattern and J2EE architecture with actual example .

借助于固体理论中的LLP变换研究自由电子激光场的光子统计性质，并发展了一种微扰方法予以求解。

The photon statistics in free electron laser fields is analysed by means of LLP transformation in this paper . And the perturbation solution is presented .

并以ZnO薄膜为沟道层制作了薄膜晶体管（ZnO-TFT），该晶体管工作在n沟道增强模式，阈值电压为17.5V，电子的场迁移率达到1.05cm2/（V·s）。

We fabricate thin film transistors with ZnO as an active channel layer that works well in the n-channel enhancement mode and have a threshold voltage of 17.5V and a mobility rate as high as 1.05cm2 / ( V · s ) .