硅晶片

高质量的硅晶片是芯片制造和IC发展的基础；

The high quality silicon wafer is the basic of chip manufacturing and IC development .

纳米CeO2磨料对硅晶片CMP的效果与机理研究

Study on the CMP Mechanism and Property of Silicon Wafer by Nano-sized CeO_2 Abrasives

纳米CeO2磨料在硅晶片化学机械抛光中的化学作用机制

Chemical Effect Mechanism in Chemical Mechanical Polishing Silicon Wafer Using Nano-sized CeO_2 Abrasives

作者利用双晶X射线衍射技术，研究了不同切割速率下硅晶片的切割损伤。

By means of technique of X-ray double crystal diffraction , the different cutting damages of silicon slices have been studied .

用于超精密硅晶片表面的化学机械抛光（CMP）技术研究

Research Progress of CMP Technology in Ultra-precision Surface of Single-crystal Silicon

氧本征吸除硅晶片的DLTS研究

DLTS Study of the Oxygen I-G Effect on Si Wafer

分析内圆锯切过程中，振动变化及其对硅晶片表面粗糙度、弯曲度和TTV的影响。

Analysis the effect of the wafers ' surface roughness and its precision leading from the vibration of the blade .

基于Navier-Stokes方程的传统理论，把整个实验硅晶片上的所有并联微通道纳入计算区域，通过FLUENT商业软件对其进行数值模拟。

Based on the conventional Navier-Stokes theory , the whole silicon substrate was included as the computation domain and was simulated by the commercial package FLUENT .

集成电路（IC）制造工业中，化学机械抛光（ChemicalMechanicalPolishing，CMP）广泛应用于计算机硬盘片、硅晶片超光滑无损伤表面的加工。

Chemical-mechanical-polishing ( CMP ) has been rapidly developing and finding extensive applications in the integrated circuit ( IC ) manufacturing industry for processing hard disk of computer and silicon wafer with super-smooth and flawless surface .

化学机械抛光（CMP）技术作为目前唯一的可以提供在整个圆硅晶片上全面平坦化的工艺技术，已被越来越广泛地应用到了半导体领域。

A true global planarization can be achieved only by CMP technology right now , and it is used more and more widely in semi-conductor field .

整个产业链从智能卡芯片设计、硅晶片的生产制造、芯片封装、智能卡COS研发、个人化、发行卡最终到用户，整个产业链将随着技术和应用的发展，将进一步细分。

The whole industry chain is from the smart card chip design , silicon chip manufacturing , chip packaging , smart cards COS R & D , personal , and issuing cards to the end user .

通过分析硅晶片化学机械抛光过程中软质层的形成及其对材料去除过程的影响，研究了使用纳米CeO2磨料进行化学机械抛光中的化学作用机理。

By analyzing the formation of soft layer and its effect on the surface roughness and material removal rate in Si CMP , the chemical effect mechanism of nano CeO2 was studied .

Endura平台是一个模块化、可配置系统，用于将金属和金属合金安装到硅晶片。

The Endura platform is a modular , configurable system used to deposit metals and metal alloys on the wafer .

对在硅晶片上的钨硅化物的分析，不能使用WLα及SiKα两种谱线，而应使用W的两种谱线（浓度分析用W-N线，膜厚分析对用W-Lα线）。

The analysis of tungsten silicide on silicon wafer was developed using two kinds of tungsten spectra instead of W La and Si Ka combination ( concentration analysis ; W-N X-ray , thickness measurement ; W La ) .

锯片振动及磨损过程对硅晶片表面粗糙度、弯曲度和TTV的影响。采集从新锯片开始锯切到失效整个过程中，锯片径向和轴向振动信号。

The effect between vibration of the blade , its abrasion and the wafers ' surface roughness , warp and TTV . Sample the radial and axial vibration of the blade , and carry on power cepstrum , frome a new ID saw blade slicing till to its invalidation ;

硅晶片化学机械抛光中的化学作用机理

Chemical Effect Mechanism in Chemical Mechanical Polishing for Silicon Wafer

硅晶片应力的红外光弹测量

Measurement of stresses in silicon wafer with infrared photoelastic method

硅晶片超精密加工的研究现状

Present Status of Ultra-Precision Machining Technology of Silicon Wafer

硅晶片尺寸从最初的不到1英寸发展到现在的18英寸。

Silicon wafer size increases from less than 1 inch to 18 inches .

红外光弹三向进光法研究硅晶片的应力状态

Study of stress state in silicon wafer by three-direction observation of infrared Photoelasticity

大直径硅晶片化学机械抛光及其终点检测技术的研究与应用

Application and research of endpoint-detection technology for chemical mechanical polishing of large size wafer

首先，在在硅晶片衬底表面制备了垂直定向生长的碳纳米管阵列。

First , direct growth of carbon nanotubes array are prepared vetically to the silicon substrate .

利用金属过渡层低温键合硅晶片

Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals

描述了一种基于斜率传感器的大型硅晶片平面度扫描测量系统。

This paper describes a slope sensor-based scanning system for flatness measurement of large silicon wafers .

但一遇弯折，纸一般薄的硅晶片就会像薄薄的糖片一样折断。

But the nearly paper-thin cells snap when bent , like a thin sheet of sugar .

接着，机器吸入里面的硅晶片，一个个地自动快速加工。

The machines then suck the wafers inside and automatically process them one-by-one in quick succession .

分析表明，软质层是抛光液与硅晶片反应形成的一层覆盖在基体表面的腐蚀层，其硬度比基材小，厚度在几个纳米左右。

The results show that the soft layer is a reaction layer formed on the silicon surface ;

分析了纳米磨料自身变形量对磨料嵌入硅晶片基体材料的深度的影响，以及纳米磨料硬度对抛光表面粗糙度的影响。

The effect of the hardness of nano-sized abrasives on the roughness of polished surface was discussed .

此图显示的就是光掩膜，上面印有将打印到硅晶片上的图案。

Shown here is a photomask , which bears the patterns that will be printed onto a wafer .

生产工艺越复杂，硅晶片出现缺陷的概率就越大。

As the fabrication processes increase in complexity , there is a great probability of defects on the wafer .