利用紧束缚近似下的格林函数方法,讨论了Si中硫属元素混对杂质(即S~0/Se~0,S~0/Te~0和Se~0/Te~0)基态的电子结构。
Using the Green 's function method with a tight binding Hamiltonian , the electronic structures of the ground states of S ~ 0 / Se ~ 0 , S0 / Te0 and Se ~ 0 / Te ~ 0 mixed pairs in Si are investigated .