二乙基锌

本文采用常压MOCVD方法在Ti/Si（111）模板上生长了氧化锌（ZnO）薄膜，使用二乙基锌为Zn源，去离子水为O源。

ZnO films were prepared by atmospheric-pressure MOCVD on Ti / Si ( 111 ) templates , with DEZn and deionized water as Zn precursors and O precursors , respectively .

实验结果表明，当二乙基锌和过氧化氢溶液的脉冲时间分别为0.5s和2s时，所生长的氧化锌薄膜具有良好的宏观平整度。

Lots of experiments indicate that ZnO films offer good thickness uniformity when the pulse time of DEZn and H2O2 is 0.5 s and 2 s. respectively .

高分子载体手性配体在二乙基锌对羰基的加成反应中的应用

Application of polymer - supported chiral ligands in addition reactions of Et_2Zn to aldehydes

试验探讨了溶胶凝胶法中前驱体二乙基锌的合成方案，并指出了其存在的问题所在；

It had been discussed about the synthesizing scheme of predecessor about diethyl zinc used in the method of sol-gel , problems existed in it also were pointed out .

以锌为催化剂由乳酸的低聚物裂解制得单体丙交醋，再由二乙基锌引发开环聚合得到高分子量的聚乳酸。

With the Zinc as the catalyst , lactide monomer was obtained by decomposition of low polymer . With the zinc diethyl as the catalyst , the lactide was polymerized to Poly ( DL-lactic acid ) .

同时还研究了不同锌源与ZnO低温缓冲层厚度对Ti／Si模板上生长ZnO薄膜的影响，相对于二甲基锌而言，二乙基锌为更好的锌源，且对缓冲层厚度进行了优化。

Meanwhile , the effects of zinc precursors and the thickness of ZnO low-temperature buffer layer on the growth of ZnO thin films on Ti / Si templates were studied . The results indicated that DEZn was the superior zinc precursor for the MOCVD growth of ZnO compared with DMZn .