位错

wèi cuò
  • dislocation;line defect
位错位错
位错[wèi cuò]
  1. 喷射沉积Ni3Al-Mo合金的位错结构分析

    Dislocation structure of spray deposited Ni_3Al Mo alloy

  2. Ce~(3+):YAG晶体位错的研究

    Study on Dislocation of Ce ~ ( 3 + ): YAG Crystal

  3. 对于比较大的位错,b值大于1。

    While for large slips , the b - value is larger than 1 .

  4. 温梯法Al2O3晶体位错形貌分析

    Topography Analysis of Dislocation in Al 2O 3 Crystal by Temperature Gradient Technique

  5. Cr:BeAl2O4单晶中位错的产生与传播

    Generation and Propagation of Dislocations in Cr : BeAl_2O_4 Single Crystals

  6. 此外,在Ni孪晶界附近存在较多生长缺陷&Frank位错。

    Furthermore , there are quite many growth defects-Frank dislocations near the Ni twin boundary .

  7. Si晶体中60°位错与空位缺陷相互作用的分子动力学研究

    Molecular Dynamics Simulation of Interaction Between a 60 ° Dislocation and Vacancy Defects in Si Crystal

  8. 用LCD产生位错光栅生成空心光束

    Production of Hollow beam by Dislocation Grating with LCD

  9. 研究表明反常内耗峰(3,P2和P1峰)与倾斜的位错弯结链密切相关。

    The anomalous amplitude-dependent internal friction peaks , P_3 , P_2 and P_1 , are found to be related closely to slant dislocation kink chains .

  10. 位错对高体积分数SiCP/2024Al时效行为的影响

    Effect of dislocations on the aging behavior of high volume fraction sic_p / 2024al composite

  11. 室温下单晶硅显微压痕表面位错组态的TEM观察

    TEM observations of the dislocations from micro-indentation surface in single crystalline silicon at room temperature

  12. 疲劳变形亚结构的TEM分析表明:纯锆典型的位错组态是平行位错墙。

    TEM analysis exhibits that the predominant dislocation configuration of HCF specimens is parallel dislocation walls .

  13. 大量纳米尺寸的TiC球形析出物粒子在铁素体的位错线上分布;

    A large number of nanometer TiC particles distributed on dislocations in ferrite .

  14. [013]取向Cu单晶体在NaCl水溶液中腐蚀疲劳位错结构的观察

    Observation of the dislocation structure in [ 013 ] copper single crystal during corrosion fatigue in NaCl aqueous solution

  15. 结果表明:加载裂纹吸附Hg原子后能促进位错的发射、增殖和运动;

    The results showed that chemisorption of Hg atoms could facilitate dislocation emission and motion .

  16. 静液挤压Zr形成位错亚结构的特殊形态

    Unusual dislocation substructures in Zr by hydrostatic extrusion

  17. Nb和Nb-V微合金化钢位错亚结构强化的X射线研究

    Investigation of dislocation substructural strengthening in Nb and Nb-V MICROALLOY STEELS BY X-RAY

  18. 二相TiAl基金属间化合物层片结构中的位错组态

    Dislocation Configurations in a Two-Phase Lamellar TiAl-based Intermetallic Compound

  19. 计算了显微组织强化和位错强化值,分析了析出相VC的沉淀强化作用,指出上述3个因素使钢丝具有较高的强度。

    Both the strengthening value of microstructure and dislocation are calculated . The effect of precipitate consolidation on VC is analysed .

  20. 液相外延Ga(1-x)AlxAs层中位错组态的透射电镜研究

    TEM Study of the Configurations of Dislocations in LPE Ga_ ( 1-x ) Al_xAs Layers

  21. YBCO薄膜不同位错的研究

    Study of the Different Dislocation in YBCO Thin Film

  22. 溶解促进位错发射、运动导致黄铜薄膜应力腐蚀的TEM原位观察

    In situ TEM observation of dislocation emission , motion induced by anodic dissolution and the initiation of SCC in brass thin foil

  23. CSP工艺热轧低碳带钢位错形貌及密度分析

    Analysis on Dislocation Morphology and Dislocation Densities of Hot Strip of Low Carbon Steel Produced by CSP

  24. 氟磷灰石的形成是材料被迅速加热至高温进行热处理,使磷灰石以螺旋位错生长机制沿c轴晶化长大所致;

    The formation of needle-like fluorapatite is related to the heat treatment procedure , which results in needle-like fluorapatite crystals by accelerating one-dimension growth along the c-axis through the screw dislocation growth mechanism .

  25. 三硼酸锂(LBO)单晶的位错研究

    Study on dislocations in lithium boric oxide ( lbo ) crystal

  26. Fe3Al基合金超塑性变形过程中位错结构的演化

    The Evalution of Dislocation Configuration During Superplastic Deformation in Hot-rolled Fe_3Al Alloy

  27. 不锈钢在循环形变中的Bauschinger效应及其位错结构

    Bauschinger effect and dislocation structure in stainless steel during cyclic deformation

  28. Nd∶GdVO4单晶的生长、位错和形貌

    Nd ∶ GdVO_4 Crystal Growth , Dislocation and Crystallography

  29. CSP工艺比传统工艺生产的同规格产品位错密度高约一个数量级。

    The dislocation density after the finishing pass is larger than that of the hot strip produced by the conventional technique .

  30. 第一阶段相当于位错的被钉札,在第二阶段里△E的再上升则表示已有粗滑移区出现。

    The first stage corresponds to the pinning of dislocations and the rise of △ E in the second stage is associated with the occurrence of localized slip regions in the specimen .