光刻工艺

套准精度-在光刻工艺中转移图形的精度。

Alignment Precision-Displacement of patterns that occurs during the photolithography process .

光刻工艺参数的优化方法

Optimization of Photolithography Process Parameters

关于大数值孔径g线镜头的光刻工艺优化及实验方法

Optimized Optical Lithography Process for High NA G-Line Lenses and Experimental Method

利用蒸镀技术在玻璃衬底上蒸镀金属Al薄层后，采用光刻工艺将其刻成叉指电极图形。

Aluminum electrode layer was carved into interdigital pattern using photolithography after deposited on glass substrate by evaporation .

在Y型和S型SAW质量沉积效应传感器件的传播路径上都有一个由光刻工艺精确定位的质量沉积区。

There is a mass loading area located accurately in each acoustic path and fabricated by photolithography technology in Y type and S type mass loading sensor devices .

采用磁控溅射和光刻工艺在SiO2/Si基底上制作Pt叉指电极，将单根纳米带组装在电极上，制备出基于单根纳米带的光电导半导体开关。

Radio frequency magnetron sputtering and photolithography were used to prepare Pt interdigital electrodes on the SiO2 / Si substrate .

彩色PDP光刻工艺的优化理论和设计

Optimization of Lithography Used in Design and Fabrication of Color Plasma Display Panel

ITO玻璃光刻工艺的研究

Photoetching Technology of ITO-coated Glass

结果表明，采用标准MEMS光刻工艺技术和化学铣切工艺技术，可加工出满足设计要求的螺旋槽动环。

Test results show that the design requirements of the spiral groove movable ring can be met with MEMS and chemical milling technology .

LIGA技术X光深层光刻工艺研究

Study on X-Ray Deep Lithography Process in LIGA Technique

SU-8胶光刻工艺参数优化研究

Process Optimization of Optical Lithography of SU-8 Photoresist

CNT-FED中光刻工艺的研究

Investigation of Lithography Process in CNT-FED

采用典型的半导体光刻工艺用BHF／HNO3溶液成功地刻蚀了PZT（52／48）薄膜。

PZT ( 52 / 48 ) thin film was chemically etched using BHF / HNO 3 solution through typical semiconductor lithographic process .

初步研究了SU-8胶的光刻工艺流程，讨论了涂胶、前烘等各个步骤对光刻结果的影响。

The process of SU-8 photoresist lithography is researched , and the influence of steps like coating and soft-bake on the lithography is studied .

对p型ZnO薄膜的光电效应也进行了研究，在紫外光照射下其导电性能提高了600倍。设计出适合微波标准测试的一系列电极，摸索出一套适合ZnO基器件的光刻工艺。

Photoconductivity of the p-type ZnO films was also investigated and the conductivity of the films under ultraviolet illumination is about 600 times larger than that in the dark . A series of electrode patterns for standard microwave test were designed and fabricated .

在整个无背板生长工艺中，SU-8胶紫外光刻工艺作为微电铸的前序工艺，其工艺参数的优化和光刻精度直接影响微电铸模具的质量和精度。

UV-lithography on SU-8 photoresist was the pre-procedure of micro-electroforming , so its processing parameters and dimension precision determine the quality of micro-electroforming mold directly .

然后采用正交试验的方法对UV-LIGA光刻工艺流程进行优化研究，以提高工艺的稳定性和成品率。

Then orthogonal experiment method is used to optimize the lithography process of UV-LIGA technology to improve the process stability and yield .

对光刻工艺中在光阻底部增加抗反射涂层（BARC）的研究

The Study of Add Anti Reflective Coating on PHOTO Resist Bottom in Lithography

微细加工技术在传统光刻工艺的基础上，又发展了灰调光刻、liftoff、LIGA及准LIGA、激光和分子装配等适应三维结构的新技术。

The new micro fabrication technologies for 3D structure are invented , which include gray tone lithography , Lift Off , LIGA , quasi LIGA , laser , molecule assembly technology , etc.

与Dill及Mack等的方法相比，该方法可直接建立光刻工艺参数之间的关系，并可对光刻工艺进行优化设计。

Compared with the Dill and Mack method , this method can directly establish the relations among the process parameters and optimize the lithographic process .

本文提出了基于技能知识和过程虚拟的虚拟MEMS制造系统的概念，具体以光学光刻工艺为切人点详细分析了虚拟光刻环境原形系统及关键技术；

This paper puts forward the concept of Virtual MEMS Manufacturing System based on skill knowledge and process simulation . Concretely , using optical lithography as the breakthrough , this paper details a virtual lithography prototyping system and key problems .

硅基/聚酰亚胺湿度传感器是采用集成电路光刻工艺在硅衬底上制成了以PI材料为介质膜，以金、铝为电极的电容式湿度传感器。

Si-substrate / polyimide humidity sensor is a kind of capacitive sensor with polyimide ( PI ) as a dielectric thin film and Au , Al as electrodes are prepared on a Si substrate using the photolithographic technology for integrated circuits .

引起硅片周边缺陷问题的因素有很多，衬底的厚度差异，bevel部分的污染问题，这些外界因素都是不确定的，但光刻工艺本身有着较复杂灵活的方法和工具。

Wafer edge problems caused by many factors , substrate thickness difference , and wafer bevel pollution problems , these external factors are uncertain , but a photolithographic process itself is relatively complex and flexible methods and tools .

关键工艺模块之一是新的LOCOS开发与硅栅光刻工艺改善的结合。

One of the most important module improvement is the combination of new LOCOS process development with poly gate lithography process .

第二章研究了SU-8光胶的光刻工艺，并对光刻工艺中的参数进行了优化，制得了深度较大的SU-8微通道。

In chapter 2 . , the technology for fabricating microstructure using SU-8 negative photoresist by using UV lithography was optimized . MicroChannel with high depth has been fabricated on SU-8 photoresist layer .

具体完成的工作如下：1、根据光刻工艺的基本原理，探索了一种基于光刻技术的专门用于PVDF薄膜的铝电极刻蚀方法，制备了单点及多点PVDF压力传感元件。

Detailed work is described as follows : 1 . An aluminum electrode etching method of the PVDF film is proposed according to the basic principle of lithography process . Then the single-spot and multiple-spot PVDF pressure sensors have been fabricated by using this method . 2 .

因此，当选用匀胶转速为5000r/min、时间为30s时，薄膜应力分布最优，成膜质量最佳，能够满足压印光刻工艺中300nm级图型的保真复型需求。

And when the spin coating angular velocity is 5 000 r / min and the period is 30 s , the film stress state gets the optimum to meet the requirement of 300 nm pattern transferring in IL processes .

光刻工艺中对线宽和套刻系统性控制的开发

Systematic Control Exploitation for Critical Dimension and Overlay in Photolithography Technology

双光谱法实现光刻工艺中的胶厚检测（玻璃）磨光刻花法

Two-spectrum Method for Measuring the Thickness of Photoresist in Lithography Techniques

深亚微米光学光刻工艺技术

Deep ? Sub ? Micron Optical Lithography Process Technology