一般来说,功率管器件的欧姆接触触点以及栅极是采用金材料制作,但是在基于GaN的HEMT中如果仍采用金材料制作这些结构则必须采用特殊的CMOS制程工艺。
Conventionally , gold is used for ohmic contacts and gate structures in power devices , but it makes GaN processing incompatible with conventional CMOS processing .